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    Magnetic sensor using integrated silicon Hall effect elements formed on the (100) plane of a silicon substrate
    1.
    发明授权
    Magnetic sensor using integrated silicon Hall effect elements formed on the (100) plane of a silicon substrate 失效
    磁传感器使用集成硅霍尔效应元件形成在硅衬底的（100）平面上

    公开(公告)号：US4875011A

    公开(公告)日：1989-10-17

    申请号：US21671

    申请日：1987-03-04

    申请人： Masayuki Namiki ,  Masanori Gouda ,  Masaaki Kamiya

    发明人： Masayuki Namiki ,  Masanori Gouda ,  Masaaki Kamiya

    IPC分类号： H01L43/06

    CPC分类号： H01L43/065

    摘要： Two Hall effect devices are formed on a major surface of a silicon single crystal substrate lying in parallel to the (100) crystalline plane and series-connected to form a magnetic sensor. Each of the Hall effect devices has a pair of drive electrodes spaced apart from each other in a direction substantially parallel to the or crystalline axis and held at different potentials for flowing therebetween a drive current in said direction to drive the Hall effect device and a pair of Hall terminals for developing a Hall voltage when exposed to an external magnetic field. A comparator compares the potentials of two selected Hall terminals of the different Hall devices with each other to produce a compared signal. A switching element is connected to one of the Hall devices to control the potential of the Hall terminals to equalize the potentials of the two selected Hall terminals in response to the compared signal. Two non-selected Hall terminals develop positive and negative Hall voltages, respectively, relative to the selected Hall terminals so that the magnetic sensor produces a totalized Hall voltage of the two Hall effect devices.

    摘要翻译： 两个霍尔效应器件形成在平行于（100）晶体平面并且串联连接的硅单晶衬底的主表面上以形成磁传感器。 每个霍尔效应装置具有一对驱动电极，该驱动电极在基本上平行于<100>或<010>晶轴的方向上彼此间隔开并且保持在不同的电位以在其间流动在所述方向上的驱动电流以驱动 霍尔效应器件和一对霍尔端子，用于在暴露于外部磁场时产生霍尔电压。 比较器将不同霍尔器件的两个选定的霍尔端子的电位彼此进行比较，以产生比较的信号。 开关元件连接到霍尔器件中的一个，以响应于所比较的信号来控制霍尔端子的电位来均衡两个所选霍尔端子的电位。 两个未选择的霍尔端子相对于所选择的霍尔端子分别产生正和负霍尔电压，使得磁传感器产生两个霍尔效应器件的累加霍尔电压。

    Thermosensitive semiconductor device using Darlington circuit
    2.
    发明授权
    Thermosensitive semiconductor device using Darlington circuit 失效
    使用达林顿电路的热敏半导体器件

    公开(公告)号：US4639755A

    公开(公告)日：1987-01-27

    申请号：US413492

    申请日：1982-08-31

    申请人： Masayuki Namiki ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Kojiro Tanaka

    发明人： Masayuki Namiki ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Kojiro Tanaka

    IPC分类号： H01L29/73 ,  G01K7/01 ,  H01L21/331 ,  H01L27/02 ,  H01L27/082 ,  H01L27/092 ,  H01L27/16 ,  H01L29/66 ,  H01L35/00 ,  H01L23/56

    CPC分类号： H01L27/16 ,  H01L27/0211 ,  H01L27/0825 ,  H01L27/092 ,  H01L29/66

    摘要： A thermosensitive semiconductor device has a semiconductor substrate of one conductivity type which is used as the common collector of at least two Darlington-connected transistors. The base of the first stage transistor is connected to the common collector to form a first terminal and the emitter of the final stage transistor forms a second terminal. A constant current source is connected between the first and second terminals. To reduce deviations in the temperature response, a second collector region can be used and which can extend to a depth deeper than the depth of the emitter of the final stage transistor to absorb some of the carriers injected by the emitter.

    摘要翻译： 热敏半导体器件具有一种导电类型的半导体衬底，其用作至少两个达林顿连接的晶体管的公共集电极。 第一级晶体管的基极连接到公共集电极以形成第一端子，并且最后级晶体管的发射极形成第二端子。 恒流源连接在第一和第二端子之间。 为了减少温度响应的偏差，可以使用第二集电极区域，并且其可以延伸到比最终级晶体管的发射极的深度更深的深度，以吸收由发射极注入的一些载流子。

    Temperature detecting device
    3.
    发明授权
    Temperature detecting device 失效
    温度检测装置

    公开(公告)号：US4395139A

    公开(公告)日：1983-07-26

    申请号：US236492

    申请日：1981-02-20

    申请人： Masayuki Namiki ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Kojiro Tanaka

    发明人： Masayuki Namiki ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Kojiro Tanaka

    IPC分类号： G01K7/01 ,  G01K7/00

    CPC分类号： G01K7/01

    摘要： A temperature detecting device comprises a semiconductor diode temperature sensor having a resistance characteristic which varies with variations in temperature, and a constant current circuit connected in series. A power source is connected in parallel with the series circuit and connected in parallel with a constant voltage circuit. A resistance ladder circuit is connected between an output terminal of the constant voltage circuit and one terminal of the power source, and an output terminal of the resistance ladder circuit is connected to a first input terminal of a differential amplifier. A second input terminal of the differential amplifier is connected to a connection point of the semiconductor diode and the constant current circuit. In operation, the voltage drops across cumulatively successive resistors of the resistance ladder circuit are compared with the voltage drop across the semiconductor diode temperature sensor by the differential amplifier and in response to a favorable comparison, the output logic state of the differential amplifier changes to thereby provide an output temperature signal.

    摘要翻译： 温度检测装置包括具有随温度变化而变化的电阻特性的半导体二极管温度传感器和串联连接的恒流电路。 电源与串联电路并联连接并与恒压电路并联连接。 电阻梯形电路连接在恒压电路的输出端和电源的一端之间，电阻梯形电路的输出端与差分放大器的第一输入端相连。 差分放大器的第二输入端子连接到半导体二极管和恒流电路的连接点。 在操作中，将电阻梯形电路的累积连续电阻器上的电压降低通过差分放大器与半导体二极管温度传感器两端的电压降进行比较，并且响应于有利的比较，差分放大器的输出逻辑状态由此变化 提供输出温度信号。

    Magnetic sensor using a plurality of Hall effect devices
    4.
    发明授权
    Magnetic sensor using a plurality of Hall effect devices 失效
    磁传感器使用多个霍尔效应器件

    公开(公告)号：US4739264A

    公开(公告)日：1988-04-19

    申请号：US829448

    申请日：1986-02-13

    申请人： Masaaki Kamiya ,  Masayuki Namiki

    发明人： Masaaki Kamiya ,  Masayuki Namiki

    IPC分类号： H01L43/12 ,  G01R33/07 ,  H01L43/04 ,  G01R33/06 ,  H01L43/06 ,  H03K17/90

    CPC分类号： G01R33/07

    摘要： Two Hall effect devices are series-connected to form a magnetic sensor. Each of the Hall effect devices has a pair of Hall terminals for developing a Hall voltage when exposed to an external magnetic field. A comparator compares the potentials of two selected Hall terminals of the different Hall devices with each other to produce a compared signal. A switching element is connected to one of the Hall devices to control the potential of the Hall terminals to equalize the potentials of the two selected Hall terminals in response to the compared signal. Two non-selected Hall terminals develop positive and negative Hall voltages, respectively, relative to the selected Hall terminals so that the magnetic sensor produces a totalized Hall voltage of the two Hall effect devices.

    摘要翻译： 两个霍尔效应器件串联连接形成磁传感器。 每个霍尔效应器件具有一对用于在暴露于外部磁场时产生霍尔电压的霍尔端子。 比较器将不同霍尔器件的两个选定的霍尔端子的电位彼此进行比较，以产生比较的信号。 开关元件连接到霍尔器件中的一个，以响应于所比较的信号来控制霍尔端子的电位来均衡两个所选霍尔端子的电位。 两个未选择的霍尔端子相对于所选择的霍尔端子分别产生正和负霍尔电压，使得磁传感器产生两个霍尔效应器件的累加霍尔电压。