公开(公告)号：US20180217122A1

公开(公告)日：2018-08-02

申请号：US15883183

申请日：2018-01-30

Applicant: Massachusetts Institute of Technology

Inventor： Huaiyu Meng ,  Rajeev Ram

IPC: G01N33/487 ,  H01L31/107 ,  H01L31/16 ,  H01L31/02 ,  C12Q1/6876 ,  G01N27/447 ,  B03C5/00

CPC classification number: G01N33/48707 ,  B01L3/502715 ,  B01L3/50273 ,  B01L3/502761 ,  B01L2200/0663 ,  B01L2300/0816 ,  B01L2300/0896 ,  B01L2400/0421 ,  B01L2400/0424 ,  B03C5/005 ,  B03C5/026 ,  B03C2201/26 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C1/00246 ,  B81C2203/0742 ,  B82B1/001 ,  B82B3/0019 ,  B82Y15/00 ,  B82Y40/00 ,  C12Q1/6876 ,  G01N27/44713 ,  G01N27/44726 ,  G01N27/44791 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/107 ,  H01L31/165

Abstract: A system for molecular mapping includes a semiconductor substrate defining a reservoir to receive a sample of molecules and a nanofluidic channel in fluid communication with the reservoir. The system also includes a plurality of electrodes, in electrical communication with the nanofluidic channel, to electrophoretically trap the sample of molecules in the nanofluidic channel. At least one avalanche photodiode is fabricated in the semiconductor substrate and disposed within an optical near-field of the nanofluidic channel to detect fluorescence emission from at least one molecule in the sample of molecules.

公开(公告)号：US10043925B2

公开(公告)日：2018-08-07

申请号：US15250594

申请日：2016-08-29

Applicant: Massachusetts Institute of Technology

Inventor： Rajeev Jagga Ram ,  Jason Scott Orcutt ,  Huaiyu Meng ,  Amir H. Atabaki

IPC: H01L31/0232 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/0368 ,  H01L31/103

Abstract: Guided-wave photodetectors based on absorption of infrared photons by mid-bandgap states in non-crystal semiconductors. In one example, a resonant guided-wave photodetector is fabricated based on a polysilicon layer used for the transistor gate in a SOI CMOS process without any change to the foundry process flow (‘zero-change’ CMOS). Mid-bandgap defect states in the polysilicon absorb infrared photons. Through a combination of doping mask layers, a lateral p-n junction is formed in the polysilicon, and a bias voltage applied across the junction creates a sufficiently strong electric field to enable efficient photo-generated carrier extraction and high-speed operation. An example device has a responsivity of more than 0.14 A/W from 1300 to 1600 nm, a 10 GHz bandwidth, and 80 nA dark current at 15 V reverse bias.