摘要:
A toner for use in electrophotography comprising thermoplastic resin core particles (A) or colorant-embedded thermoplastic resin core particles (A') each having an average particale size of 1 to 15 .mu.m, a charge-controlling agent (B) and carrier particles (C) having an average particle size of 0.05 to 2.0 .mu.m, the charge-controlling agnet (B) being carried on the carrier particles (C), and the carrier particles (C) with the agent (B) carried thereon being embedded in the surfaces of the resin core particles (A) or the colorant-embedded resin core particles (A').
摘要:
Wiring lines for the supply of a voltage to feed a drive voltage to an integrated circuit formed in a semiconductor chip are disposed so as to cover a main surface of the semiconductor chip, so that, if the wiring lines are removed for the purpose of analyzing information stored in the semiconductor chip, the integrated circuit does not operate and it is impossible to analyze the information. Further, there is provided a processing detector circuit for detecting that the wiring lines have been tampered with. When the processing detector circuit detects a change in the state of the wiring lines, the integrated circuit is reset. Thus, it is possible to improve the security of information stored on the card.
摘要:
The electrode of the invention suitable for use in an oxygen-generating electrolytic process with durability comprises (A) a substrate of, e.g., titanium metal; (B) an undercoating layer thereon which is formed of a mixture of an iridium oxide and tantalum oxide in a limited molar proportion and (C) an overcoating layer formed of an iridium oxide. The undercoating layer can be formed by coating the substrate surface with a solution containing an iridium compound and tantalum compound each having thermal decomposability and then subjecting the coated substrate body to a heat treatment in an oxidizing atmosphere. Similarly, the overcoating layer can be formed by coating with a solution containing a thermally decomposable iridium compound followed by an oxidative heat treatment in an oxidizing atmosphere.
摘要:
In the inventive fabrication process for electrodes for electrochemical devices, when the coating film is rolled so as to increase its density, the given binder solvent is intentionally allowed to remain in an amount good enough to keep pores on the surface of the active substance uncrushed, and after the rolling operation is carried out, the solvent extraction operation is conducted to remove the binder solvent remaining in the pores in the coating film. Thus, an electrochemical device using an electrode according to the inventive fabrication process is much improved in electrostatic capacity as well as in durability and reliability as well.
摘要:
Wiring lines for the supply of a voltage to feed a drive voltage to an integrated circuit formed in a semiconductor chip are disposed so as to cover a main surface of the semiconductor chip, so that, if the wiring lines are removed for the purpose of analyzing information stored in the semiconductor chip, the integrated circuit does not operate and it is impossible to analyze the information. Further, there is provided a processing detector circuit for detecting that the wiring lines have been tampered with. When the processing detector circuit detects a change in the state of the wiring lines, the integrated circuit is reset. Thus, it is possible to improve the security of information stored on the card.
摘要:
Between an external terminal and the gate of one of output MOSFETs whose source or drain is connected to the external terminal, there is connected a P-channel type first protective MOSFET whose gate is connected to a high voltage side power supply terminal and which has a channel length equal to or larger than that of the output MOSFET, or an N-channel type second protective MOSFET whose gate is connected to a low voltage side power supply terminal and which has a channel length equal to or larger then that of the output MOSFET. When the external terminal is discharged by device charge, one of the protective MOSFETs is turned on, and the charge on the gate side of the output MOSFET can be likewise released by device charge to prevent ESD (Electro-Static Discharge) breakdown.
摘要:
Wiring lines for the supply of a voltage to feed a drive voltage to an integrated circuit formed in a semiconductor chip are disposed so as to cover a main surface of the semiconductor chip, so that, if the wiring lines are removed for the purpose of analyzing information stored in the semiconductor chip, the integrated circuit does not operates and it is impossible to analyze the information. Further, there is provided a processing detector circuit for detecting that the wiring lines have been tampered with. When the processing detector circuit detects a change in the sate of the wiring lines, the integrated circuit is reset. Thus, it is possible to improve the security of information stored on the card.
摘要:
Provided is an inspection method for a multilayer gas sensing device, capable of certainly and easily detecting a defective product originating from faults such as gaps or cracks. For the inspection of the gas sensing device including a sensor cell in which a measured gas side electrode is coated with a porous diffusion resistance layer in a stacked condition and the diffusion resistance layer is further coated with a dense protective layer in a stacked condition, in a state where the gas sensing device is immersed in a conductive inspection solution and a reference electrode of the sensor cell is placed into a non-contact with the solution, a voltage is applied between the solution and the reference electrode to measure a current flowing therebetween. On the basis of the measured current value, a decision is made as to whether or not the insulation is kept between the solution and the reference electrode.
摘要:
An oxygen generating electrode has on a conductive substrate a first layer of metallic platinum and tantalum oxide containing 80-99 mol% of Ta and 20-1 mol% of Pt, a second layer of iridium oxide and tantalum oxide containing 80-99.9 mol% of Ir and 20-0.1 mol% of Ta, and preferably a third layer of iridium oxide and tantalum oxide containing 40-79.9 mol% of Ir and 60-20.1 mol% of Ta. In another embodiment, the first layer consists of iridium oxide and tantalum oxide and contains 14-8.4 mol% of Ir and 86-91.6 mol% of Ta. The electrode, when used as an anode in electrolysis with concomitant oxygen generation, can be used for an extended period at a low bath voltage. It is adapted for electrolysis at a high current density of more than 100 A/cm.sup.2 since it maintains mechanical strength and has a long effective life. It experiences a minimal change of oxygen overvoltage with time.
摘要:
An anode comprising an electroconductive substrate provided with a (Ru-Sn)O.sub.2 solid solution coating is useful in brine electrolysis. The improved coating has a composition of (i) 3 to 45 mol % of ruthenium oxide, (ii) 0.1 to 30 mol % of at least one member selected from metallic platinum, platinum oxide, and iridium oxide, and (iii) 50 to 96.9 mol % of tin oxide which may be partially replaced by antimony.