公开(公告)号：US20110310379A1

公开(公告)日：2011-12-22

申请号：US13058403

申请日：2009-08-05

申请人： Matthew Byrne ,  Edmund Linfield ,  Christopher Wood ,  Alexander Giles Davies ,  John Cunningham

发明人： Matthew Byrne ,  Edmund Linfield ,  Christopher Wood ,  Alexander Giles Davies ,  John Cunningham

IPC分类号： G01N21/25 ,  G01J3/00

CPC分类号： G01N21/3581 ,  G01J3/42 ,  G01N21/3563 ,  G01N21/552 ,  H01L31/0352 ,  H01L31/09

摘要： A method for measuring an absorption characteristic of a sample comprises: providing a microstrip waveguide comprising a ground plane, an elongate conductive strip having a first end and a second end, and a dielectric substrate separating the ground plane from the elongate strip such that the strip extends from its first end to its second end in a plane substantially parallel to the ground plane; emitting electromagnetic radiation from a first intermediate position along the microstrip waveguide, said first intermediate position being a position between the first and second ends of the strip, such that said radiation propagates along the waveguide in a direction towards the second end; positioning a sample at a position external to the microstrip waveguide and between the first intermediate position and a second intermediate position along the microstrip waveguide, the second intermediate position being a position between the first intermediate position and the second end, such that at least a portion of the sample is exposed to the evanescent electric field of the propagating radiation; and detecting at least one characteristic of the propagating radiation at said second intermediate position. Corresponding apparatus is also disclosed.

摘要翻译： 用于测量样品的吸收特性的方法包括：提供包括接地平面的微带波导，具有第一端和第二端的细长导电条，以及将接地平面与细长条分开的电介质基板，使得带 在基本上平行于接地平面的平面中从其第一端延伸到其第二端; 沿着所述微带波导从第一中间位置发射电磁辐射，所述第一中间位置是所述带的第一和第二端之间的位置，使得所述辐射沿着所述波导在朝向所述第二端的方向上传播; 将样品定位在微带波导外部的位置处，并且沿着微带波导在第一中间位置和第二中间位置之间，第二中间位置是位于第一中间位置和第二端之间的位置，使得至少一部分 的样品暴露于传播辐射的ev逝电场; 并且检测所述第二中间位置处的传播辐射的至少一个特性。 还公开了相应的装置。

公开(公告)号：US20120113417A1

公开(公告)日：2012-05-10

申请号：US13384214

申请日：2010-07-19

申请人： Edmund Linfield ,  John Cunningham ,  Alexander Giles Davies ,  Christopher Wood ,  Paul John Cannard ,  David Graham Moodie ,  Xin Chen ,  Michael James Robertson

发明人： Edmund Linfield ,  John Cunningham ,  Alexander Giles Davies ,  Christopher Wood ,  Paul John Cannard ,  David Graham Moodie ,  Xin Chen ,  Michael James Robertson

IPC分类号： G01J3/00 ,  H01L33/58 ,  H01L33/02 ,  G01J1/42

CPC分类号： G02F2/00 ,  C30B25/02 ,  C30B29/40 ,  G01J3/10 ,  G01J3/42 ,  G01N21/3586 ,  G01S17/88 ,  G02F2202/10 ,  G02F2203/13 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02581 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/09 ,  Y02E10/544

摘要： A method of generating radiation comprises: manufacturing a structure comprising a substrate supporting a layer of InGaAs, InGaAsP, or InGaAlAs material doped with a dopant, said manufacturing comprising growing said layer such that said dopant is incorporated in said layer during growth of the layer; illuminating a portion of a surface of the structure with radiation having photon energies greater than or equal to a band gap of the doped InGaAs, InGaAsP, or InGaAlAs material so as to create electron-hole pairs in the layer of doped material; and accelerating the electrons and holes of said pairs with an electric field so as to generate radiation. In certain embodiments the dopant is Fe. Corresponding radiation detecting apparatus, spectroscopy systems, and antennas are described.

摘要翻译： 产生辐射的方法包括：制造包括支撑掺杂有掺杂剂的InGaAs，InGaAsP或InGaAlAs材料的衬底的衬底的结构，所述制造包括使所述层生长，使得所述掺杂剂在所述层的生长期间并入所述层中; 用大于或等于掺杂InGaAs，InGaAsP或InGaAlAs材料的带隙的光子能量的辐射照射结构的表面的一部分，以便在掺杂材料层中产生电子 - 空穴对; 并用电场加速所述对的电子和空穴，以产生辐射。 在某些实施方案中，掺杂剂是Fe。 描述了相应的辐射检测装置，光谱系统和天线。

公开(公告)号：US08809092B2

公开(公告)日：2014-08-19

申请号：US13384214

申请日：2010-07-19

申请人： Edmund Linfield ,  John Cunningham ,  Alexander Giles Davies ,  Christopher Wood ,  Paul John Cannard ,  David Graham Moodie ,  Xin Chen ,  Michael James Robertson

发明人： Edmund Linfield ,  John Cunningham ,  Alexander Giles Davies ,  Christopher Wood ,  Paul John Cannard ,  David Graham Moodie ,  Xin Chen ,  Michael James Robertson

IPC分类号： H01L21/00

CPC分类号： G02F2/00 ,  C30B25/02 ,  C30B29/40 ,  G01J3/10 ,  G01J3/42 ,  G01N21/3586 ,  G01S17/88 ,  G02F2202/10 ,  G02F2203/13 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02581 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/09 ,  Y02E10/544

摘要： A method of generating radiation comprises: manufacturing a structure comprising a substrate supporting a layer of InGaAs, InGaAsP, or InGaAlAs material doped with a dopant, said manufacturing comprising growing said layer such that said dopant is incorporated in said layer during growth of the layer; illuminating a portion of a surface of the structure with radiation having photon energies greater than or equal to a band gap of the doped InGaAs, InGaAsP, or InGaAlAs material so as to create electron-hole pairs in the layer of doped material; and accelerating the electrons and holes of said pairs with an electric field so as to generate radiation. In certain embodiments the dopant is Fe. Corresponding radiation detecting apparatus, spectroscopy systems, and antennas are described.

摘要翻译： 产生辐射的方法包括：制造包括支撑掺杂有掺杂剂的InGaAs，InGaAsP或InGaAlAs材料的衬底的衬底的结构，所述制造包括使所述层生长，使得所述掺杂剂在所述层的生长期间并入所述层中; 用大于或等于掺杂InGaAs，InGaAsP或InGaAlAs材料的带隙的光子能量的辐射照射结构的表面的一部分，以便在掺杂材料层中产生电子 - 空穴对; 并用电场加速所述对的电子和空穴，以产生辐射。 在某些实施方案中，掺杂剂是Fe。 描述了相应的辐射检测装置，光谱系统和天线。

公开(公告)号：US20140008767A1

公开(公告)日：2014-01-09

申请号：US14005084

申请日：2012-03-14

申请人： Lianhe Li ,  Alexander Davies ,  Edmund Linfield

发明人： Lianhe Li ,  Alexander Davies ,  Edmund Linfield

IPC分类号： H01L21/02

CPC分类号： H01L21/02661 ,  B82Y20/00 ,  H01L21/02 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/20 ,  H01L21/306 ,  H01S5/1231 ,  H01S5/3412 ,  H01S2304/02

摘要： A method of removing at least one oxide from a surface of a body of semiconductor material is disclosed, the method comprising: arranging the body in a vacuum chamber; and maintaining a temperature of the body in the vacuum chamber within a predetermined range, or substantially at a predetermined value, while exposing said surface to a flux of indium atoms. Corresponding methods of processing an oxidised surface of a body of semiconductor material to prepare the surface for epitaxial growth of at least one epitaxial layer or film over said surface, and methods of manufacturing a semiconductor device are also disclosed.

摘要翻译： 公开了从半导体材料的表面去除至少一种氧化物的方法，所述方法包括：将所述主体布置在真空室中; 以及在使所述表面暴露于铟原子的通量的同时将所述真空室内的体温保持在预定范围内，或基本上保持在预定值。 还公开了处理半导体材料体的氧化表面以制备用于在所述表面上至少一个外延层或膜外延生长的表面的相应方法，以及制造半导体器件的方法。

公开(公告)号：US20060049356A1

公开(公告)日：2006-03-09

申请号：US10526982

申请日：2003-09-08

申请人： Yaochun Shen ,  Alexander Davies ,  Edmund Linfield

发明人： Yaochun Shen ,  Alexander Davies ,  Edmund Linfield

IPC分类号： G01N21/17

CPC分类号： G01N21/1717 ,  G01N21/3563 ,  G01N21/3581

摘要： A terahertz spectroscopy system comprises a tenahertz source for illuminating, in use, a sample with a pulse of radiation in the terahertz frequency range. Excitation means provides excitation energy in the form of an electromagnetic or acoustic wave during illumination of the sample by the terahertz source and a terahertz sensor receives energy from the illuminated sample. Processing means receives signals from the terahertz sensor and processes them to provide an output representative of the terahertz spectrum received by the sensor.

摘要翻译： 太赫兹光谱系统包括用于在使用中照射具有太赫兹频率范围内的辐射脉冲的样本的十赫兹源。 励磁装置在通过太赫兹源照明样品期间提供电磁或声波形式的激发能量，并且太赫兹传感器从照射样品接收能量。 处理装置接收来自太赫兹传感器的信号并处理它们以提供表示由传感器接收的太赫兹频谱的输出。

公开(公告)号：US09263264B2

公开(公告)日：2016-02-16

申请号：US14005084

申请日：2012-03-14

申请人： Lianhe Li ,  Alexander Davies ,  Edmund Linfield

发明人： Lianhe Li ,  Alexander Davies ,  Edmund Linfield

IPC分类号： H01L29/06 ,  H01L21/02 ,  B82Y20/00 ,  H01L21/20 ,  H01L21/306 ,  H01S5/12 ,  H01S5/34

CPC分类号： H01L21/02661 ,  B82Y20/00 ,  H01L21/02 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/20 ,  H01L21/306 ,  H01S5/1231 ,  H01S5/3412 ,  H01S2304/02

摘要： A method of removing at least one oxide from a surface of a body of semiconductor material is disclosed. The method includes arranging the body in a vacuum chamber and maintaining a temperature of the body in the vacuum chamber within a predetermined range, or substantially at a predetermined value, while exposing said surface to a flux of indium atoms. Corresponding methods of processing an oxidized surface of a body of semiconductor material to prepare the surface for epitaxial growth of at least one epitaxial layer or film over said surface, and methods of manufacturing a semiconductor device are also disclosed.

摘要翻译： 公开了一种从半导体材料的表面去除至少一种氧化物的方法。 该方法包括将真空室内的物体布置在真空室中，并将真空室内的温度保持在预定范围内，或基本上保持在预定值，同时将所述表面暴露于铟原子流中。 还公开了处理半导体材料体的氧化表面以制备用于在所述表面上至少一个外延层或膜外延生长的表面的相应方法，以及制造半导体器件的方法。

公开(公告)号：US20070034813A1

公开(公告)日：2007-02-15

申请号：US10550620

申请日：2004-03-24

申请人： Yao-chun Shen ,  Edmund Linfield ,  Alexander Davies

发明人： Yao-chun Shen ,  Edmund Linfield ,  Alexander Davies

IPC分类号： G21G4/00

CPC分类号： H01S1/02 ,  G01N21/3586 ,  H01L33/0004 ,  H01Q3/2676 ,  H01Q19/10

摘要： The invention relates to improved terahertz radiation sources and associated methods. A terahertz radiation source is described, comprising: an emitter (202) comprising a semiconductor material (12); a pair of electrodes (204a,b) adjacent a face of said semiconductor, said pair of electrodes defining a gap between said electrodes; a pulsed light source input for illuminating said semiconductor to excite photo-carriers in said semiconductor to generate terahertz radiation; and a radiation collector (212) to collect said terahertz radiation; and wherein said radiation collector is disposed on the same side of said semiconductor as said electrodes. A related method of providing terahertz radiation is also described.

摘要翻译： 本发明涉及改进的太赫兹辐射源和相关方法。 描述了一种太赫兹辐射源，包括：包括半导体材料（12）的发射器（202）; 与所述半导体的表面相邻的一对电极（204a，b），所述一对电极限定所述电极之间的间隙; 用于照亮所述半导体以激发所述半导体中的光载流子以产生太赫兹辐射的脉冲光源输入; 和收集所述太赫兹辐射的辐射收集器（212）; 并且其中所述辐射收集器设置在所述半导体与所述电极相同的一侧上。 还描述了提供太赫兹辐射的相关方法。