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14 条记录 (耗时 0.024 秒)

    Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling
    1.
    发明申请
    Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling 有权
    电流垂直于平面的磁阻传感器，具有通过堆叠正交磁耦合稳定的自由层

    公开(公告)号：US20050207070A1

    公开(公告)日：2005-09-22

    申请号：US10802639

    申请日：2004-03-16

    申请人： Matthew Carey ,  Jeffrey Childress ,  Bruce Gurney ,  Stefan Maat

    发明人： Matthew Carey ,  Jeffrey Childress ,  Bruce Gurney ,  Stefan Maat

    IPC分类号： G01R33/09 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/30 ,  H01F10/32

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/30 ,  H01F10/3268 ,  H01F10/3295

    摘要： A magnetically-coupled structure has two ferromagnetic layers with their in-plane magnetization directions coupled orthogonally across an electrically-conducting spacer layer that induces the direct orthogonal magnetic coupling. The structure has application for in-stack biasing in a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor. One of the ferromagnetic layers of the structure is a biasing ferromagnetic layer and the other ferromagnetic layer is the sensor free layer. An antiferromagnetic layer exchange-couples the biasing layer to fix its moment parallel to the moment of the sensor pinned layer. This allows a single annealing step to be used to set the magnetization direction of the biasing and pinned layers. The electrically-conducting spacer layer, the biasing layer and the antiferromagnetic layer that exchange-couples the biasing layer may all extend beyond the edges of the sensor stack.

    摘要翻译： 磁耦合结构具有两个铁磁层，它们的面内磁化方向正交地耦合在导电直接磁耦合的导电间隔层上。 该结构具有在电流垂直于平面（CPP）磁阻传感器中的堆叠偏置的应用。 该结构的铁磁层之一是偏置铁磁层，另一个铁磁层是传感器自由层。 反铁磁层将偏置层交换耦合以固定其平行于传感器固定层的力矩的力矩。 这允许使用单个退火步骤来设定偏置和钉扎层的磁化方向。 交换耦合偏置层的导电间隔层，偏置层和反铁磁层可以全部延伸超出传感器堆叠的边缘。

    Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems
    4.
    发明申请
    Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems 审中-公开
    用于交换耦合磁性结构的稳定性增强型底层，磁阻传感器和磁盘驱动系统

    公开(公告)号：US20050036244A1

    公开(公告)日：2005-02-17

    申请号：US10951397

    申请日：2004-09-27

    申请人： Matthew Carey ,  Eric Fullerton ,  Bruce Gurney ,  Thai Le ,  Stefan Maat ,  Philip Rice

    发明人： Matthew Carey ,  Eric Fullerton ,  Bruce Gurney ,  Thai Le ,  Stefan Maat ,  Philip Rice

    IPC分类号： G01R33/09 ,  G11B5/012 ,  G11B5/39 ,  H01F10/32 ,  G11B5/127 ,  G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3967 ,  H01F10/3277

    摘要： An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.

    摘要翻译： 交换耦合磁性结构包括强磁性层，用于偏置铁磁性层的磁化的钴铁氧体的矫顽铁氧体层以及邻近矫顽铁氧体层的氧化钴底层，例如氧化钴。 氧化物底层具有岩盐或尖晶石的晶格结构，并且在室温下不显示磁矩。 底层影响矫顽铁氧体层的结构，因此影响其磁特性，提供增强的矫顽力和增强的热稳定性。 结果，矫顽铁氧体层的热稳定性比没有底层要小得多的厚度。 交换耦合结构用于磁盘驱动系统读磁头中的自旋阀和磁隧道结磁阻传感器。 由于矫顽铁氧体层可以制成1nm的薄而保持热稳定性，所以传感器满足高记录密度系统的窄间隙要求。

    Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by an antiferromagnetic/ferromagnetic exchange-coupled structure
    6.
    发明申请
    Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by an antiferromagnetic/ferromagnetic exchange-coupled structure 有权
    具有反铁磁/铁磁交换耦合结构的垂直磁偏置的非凡磁阻传感器

    公开(公告)号：US20060002030A1

    公开(公告)日：2006-01-05

    申请号：US10883204

    申请日：2004-06-30

    申请人： Matthew Carey ,  Bruce Gurney ,  Stefan Maat ,  Neil Smith

    发明人： Matthew Carey ,  Bruce Gurney ,  Stefan Maat ,  Neil Smith

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11C11/14 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/095 ,  G11B5/39 ,  G11B5/3993 ,  G11B2005/0008 ,  H01L43/08

    摘要： An extraordinary magnetoresistance (EMR) sensor has an antiferromagnetic/ferromagnetic exchange-coupled bilayer structure on top of the EMR active film. The ferromagnetic layer in the bilayer structure has perpendicular magnetic anisotropy and is exchange-biased by the antiferromagnetic layer. The antiferromagnetic/ferromagnetic bilayer structure provides a magnetic field perpendicular to the plane of the EMR active film to bias the magnetoresistance vs. field response of the EMR sensor. The ferromagnetic layer may be formed of any of the ferromagnetic materials useful for perpendicular magnetic recording, and is prepared in a way that its anisotropy axis is significantly out-of-plane. The antiferromagnetic layer is formed of any of the known Mn alloys, such as PtMn, NiMn, FeMn, IrMn, PdMn, PtPdMn and RhMn, or any of the insulating antiferromagnetic materials, such as those based on the cobalt oxide and nickel oxide antiferromagnetic materials.

    摘要翻译： 非常大的磁阻（EMR）传感器在EMR活性膜的顶部具有反铁磁/铁磁交换耦合双层结构。 双层结构中的铁磁层具有垂直的磁各向异性，并被反铁磁层交换偏置。 反铁磁/铁磁双层结构提供垂直于EMR有源膜的平面的磁场，以偏置EMR传感器的磁阻与场响应。 铁磁层可以由用于垂直磁记录的任何铁磁材料形成，并且以使其各向异性轴显着超出平面的方式制备。 反铁磁层由任何已知的Mn合金形成，例如PtMn，NiMn，FeMn，IrMn，PdMn，PtPdMn和RhMn，或任何绝缘反铁磁材料，例如基于氧化钴和氧化镍反铁磁材料的那些 。

    Planar extraordinary magnetoresistance sensor
    7.
    发明申请
    Planar extraordinary magnetoresistance sensor 有权
    平面非凡磁阻传感器

    公开(公告)号：US20060022672A1

    公开(公告)日：2006-02-02

    申请号：US10909122

    申请日：2004-07-30

    申请人： Amitava Chattopadhyay ,  Robert Fontana ,  Bruce Gurney ,  Stefan Maat ,  Ernesto Marinero

    发明人： Amitava Chattopadhyay ,  Robert Fontana ,  Bruce Gurney ,  Stefan Maat ,  Ernesto Marinero

    IPC分类号： G01R33/02

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G01R33/095

    摘要： An extraordinary magnetoresistance (EMR) sensor has a planar shunt and planar leads formed on top of the sensor and extending downward into the semiconductor active region, resulting. Electrically conductive material, such as Au or AuGe, is first deposited into lithographically defined windows on top of the sensor. After liftoff of the photoresist a rapid thermal annealing process causes the conductive material to diffuse downward into the semiconductor material and make electrical contact with the active region. The outline of the sensor is defined by reactive etching or other suitable etching techniques. Insulating backfilling material such as Al-oxide is deposited to protect the EMR sensor and the edges of the active region. Chemical mechanical polishing of the structure results in a planar sensor that does not have exposed active region edges.

    摘要翻译： 非常大的磁阻（EMR）传感器具有平面分流和平面引线，形成在传感器的顶部并向下延伸到半导体有源区域中。 诸如Au或AuGe的导电材料首先沉积在传感器顶部的光刻定义的窗口中。 在光致抗蚀剂剥离之后，快速热退火工艺使得导电材料向下扩散到半导体材料中并与活性区电接触。 传感器的轮廓由反应性蚀刻或其他合适的蚀刻技术限定。 沉积诸如Al氧化物的回填材料的绝缘以保护EMR传感器和有源区域的边缘。 结构的化学机械抛光导致没有暴露的有源区边缘的平面传感器。

    Magnetic head having a hall effect sensor
    9.
    发明申请
    Magnetic head having a hall effect sensor 失效
    磁头具有霍尔效应传感器

    公开(公告)号：US20060193080A1

    公开(公告)日：2006-08-31

    申请号：US11069414

    申请日：2005-02-28

    申请人： Amitava Chattopadhyay ,  Stefan Maat ,  Ernesto Marinero ,  Bruce Gurney

    发明人： Amitava Chattopadhyay ,  Stefan Maat ,  Ernesto Marinero ,  Bruce Gurney

    IPC分类号： G11B5/37

    CPC分类号： G11B5/376

    摘要： A magnetic head has a sensor which employs the “Hall effect”. In one illustrative example, the sensor includes a generally planar body made of a semiconductor heterostructure; first and second contacts comprising first and second drains, respectively, which are formed over a first end of the body and spaced equally apart from a centerline of the body; and a third contact comprising a source formed over a second end of the body which is opposite the first end of the body. The semiconductor heterostructure is comprised of a high mobility two-dimensional electron or hole gas close to an air bearing surface (ABS) of the magnetic head so as to be exposed to magnetic field lines substantially normal to it from magnetically recorded bits. Advantageously, the sensor does not require magnetic materials utilized in conventional sensors and therefore does not suffer from magnetic noise associated therewith.

    摘要翻译： 磁头具有采用“霍尔效应”的传感器。 在一个说明性示例中，传感器包括由半导体异质结构制成的大体平面体; 第一和第二触头分别包括第一和第二漏极，它们分别形成在主体的第一端上并且与主体的中心线间隔开; 以及第三触点，其包括形成在所述主体的与所述主体的第一端相对的第二端上的源。 半导体异质结构包括靠近磁头的空气轴承表面（ABS）的高迁移率二维电子或空穴气体，以便暴露于与磁记录位基本垂直于其的磁场线。 有利地，传感器不需要在常规传感器中使用的磁性材料，因此不会与其相关的磁性噪声。

    Magnetoresistive sensor based on spin accumulation effect with terminal connection at back end of sensor
    10.
    发明申请
    Magnetoresistive sensor based on spin accumulation effect with terminal connection at back end of sensor 失效
    基于传感器后端的端子连接的自旋积累效应的磁阻传感器

    公开(公告)号：US20060262458A1

    公开(公告)日：2006-11-23

    申请号：US11131737

    申请日：2005-05-17

    申请人： Matthew Carey ,  Bruce Gurney

    发明人： Matthew Carey ,  Bruce Gurney

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/398

    摘要： A disk drive magnetoresistive (MR) read head based on the spin accumulation effect has no electrical terminal and associated insulating layer in the read gap. The spin-accumulation type of MR read head has an electrically conductive strip located on an insulating layer on the lower magnetic shield with a first end at the sensing end of the head that faces the disk and a second end at the back end of the head recessed from the sensing end. At the sensing end of the head the upper magnetic shield is located on the free layer without an insulating layer. A resistance-detection circuit is electrically coupled to the upper shield and the lower shield at the back end of the head. At the back end of the head, an electrical terminal is located on the fixed layer and electrically insulated from the upper shield. A current-supply circuit is electrically coupled to the terminal and the lower shield at the back end of the head.

    摘要翻译： 基于自旋累积效应的磁盘驱动磁阻（MR）读取头在读取间隙中没有电端子和相关的绝缘层。 磁共振读取头的旋转累积型具有位于下磁屏蔽上的绝缘层上的导电条，头部的感测端处的第一端面向磁盘，并且头部后端的第二端 从传感端凹入。 在磁头的感测端，上磁屏蔽位于自由层上，没有绝缘层。 电阻检测电路电耦合到头部后端的上屏蔽和下屏蔽。 在头的后端，电端子位于固定层上并与上屏蔽电绝缘。 电流供应电路电耦合到头部的后端处的端子和下屏蔽件。