公开(公告)号：US20050207070A1

公开(公告)日：2005-09-22

申请号：US10802639

申请日：2004-03-16

申请人： Matthew Carey ,  Jeffrey Childress ,  Bruce Gurney ,  Stefan Maat

发明人： Matthew Carey ,  Jeffrey Childress ,  Bruce Gurney ,  Stefan Maat

IPC分类号： G01R33/09 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/30 ,  H01F10/32

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/30 ,  H01F10/3268 ,  H01F10/3295

摘要： A magnetically-coupled structure has two ferromagnetic layers with their in-plane magnetization directions coupled orthogonally across an electrically-conducting spacer layer that induces the direct orthogonal magnetic coupling. The structure has application for in-stack biasing in a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor. One of the ferromagnetic layers of the structure is a biasing ferromagnetic layer and the other ferromagnetic layer is the sensor free layer. An antiferromagnetic layer exchange-couples the biasing layer to fix its moment parallel to the moment of the sensor pinned layer. This allows a single annealing step to be used to set the magnetization direction of the biasing and pinned layers. The electrically-conducting spacer layer, the biasing layer and the antiferromagnetic layer that exchange-couples the biasing layer may all extend beyond the edges of the sensor stack.

摘要翻译： 磁耦合结构具有两个铁磁层，它们的面内磁化方向正交地耦合在导电直接磁耦合的导电间隔层上。 该结构具有在电流垂直于平面（CPP）磁阻传感器中的堆叠偏置的应用。 该结构的铁磁层之一是偏置铁磁层，另一个铁磁层是传感器自由层。 反铁磁层将偏置层交换耦合以固定其平行于传感器固定层的力矩的力矩。 这允许使用单个退火步骤来设定偏置和钉扎层的磁化方向。 交换耦合偏置层的导电间隔层，偏置层和反铁磁层可以全部延伸超出传感器堆叠的边缘。

公开(公告)号：US20060221515A1

公开(公告)日：2006-10-05

申请号：US11177990

申请日：2005-07-07

申请人： Matthew Carey ,  Jeffrey Childress ,  James Nix ,  Stefan Maat ,  Ian McFadyen

发明人： Matthew Carey ,  Jeffrey Childress ,  James Nix ,  Stefan Maat ,  Ian McFadyen

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3932 ,  H01F10/16 ,  H01F10/30 ,  H01F41/306 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive sensor having a self biased free layer. The free layer is constructed upon an underlayer that has been treated by a surface texturing process that configures the underlayer with an anisotropic roughness that induces a magnetic anisotropy in the free layer. The treated layer underlying the free layer can be a spacer layer sandwiched between the free layer and pinned layer or can be a separate underlayer formed opposite the spacer layer. Alternatively, the texturing of an underlayer can be used to induce a magnetic anisotropy in a bias layer that is separated from the free layer by an orthogonal coupling layer. This self biasing of the free layer induced by texturing can also be used in conjunction with biasing from a hard-bias structure.

摘要翻译： 具有自偏置自由层的磁阻传感器。 自由层被构造在已经通过表面纹理化处理处理的底层上，该表面构造过程用在各自自由层中引起磁各向异性的各向异性粗糙度来构造底层。 自由层下面的处理层可以是夹在自由层和被钉扎层之间的间隔层，或者可以是与间隔层相对形成的单独的下层。 或者，底层的纹理化可以用于在通过正交耦合层与自由层分离的偏压层中引起磁各向异性。 由纹理引起的自由层的这种自偏压也可以与来自硬偏压结构的偏压结合使用。

公开(公告)号：US20060218775A1

公开(公告)日：2006-10-05

申请号：US11097546

申请日：2005-03-31

申请人： Matthew Carey ,  Jeffrey Childress ,  Eric Fullerton ,  Stefan Maat

发明人： Matthew Carey ,  Jeffrey Childress ,  Eric Fullerton ,  Stefan Maat

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A magnetoresistive sensor having a hard magnetic pinning layer with an engineered magnetic anisotropy in a direction substantially perpendicular to the medium facing surface. The hard magnetic pinning layer may be constructed of CoPt, CoPtCr, or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness for example in form of oriented ripples or facets oriented along a direction parallel to the medium facing surface. The anisotropic roughness induces a strong uniaxial magnetic anisotropy substantially perpendicular to the medium facing surface in the hard magnetic pinning layer deposited there over.

摘要翻译： 磁阻传感器具有在基本上垂直于介质相对表面的方向上具有工程磁各向异性的硬磁性钉扎层。 硬磁性钉扎层可以由CoPt，CoPtCr或一些其他磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。 离子束蚀刻已经以相对于法线成一定角度进行，以便引起各向异性粗糙度，例如沿着平行于面向介质的表面的方向取向的定向波纹或面的形式。 各向异性粗糙度引起基本上垂直于沉积在其上的硬磁性钉扎层中的面向介质的表面的强单轴磁各向异性。

公开(公告)号：US20050122636A1

公开(公告)日：2005-06-09

申请号：US10985195

申请日：2004-11-09

申请人： Matthew Carey ,  Eric Fullerton ,  Bruce Gurney ,  Thai Le ,  Stefan Maat ,  Philip Rice

发明人： Matthew Carey ,  Eric Fullerton ,  Bruce Gurney ,  Thai Le ,  Stefan Maat ,  Philip Rice

IPC分类号： G01R33/09 ,  G11B5/012 ,  G11B5/39 ,  H01F10/32 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3967 ,  H01F10/3277

摘要： An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.

公开(公告)号：US20050036244A1

公开(公告)日：2005-02-17

申请号：US10951397

申请日：2004-09-27

申请人： Matthew Carey ,  Eric Fullerton ,  Bruce Gurney ,  Thai Le ,  Stefan Maat ,  Philip Rice

发明人： Matthew Carey ,  Eric Fullerton ,  Bruce Gurney ,  Thai Le ,  Stefan Maat ,  Philip Rice

IPC分类号： G01R33/09 ,  G11B5/012 ,  G11B5/39 ,  H01F10/32 ,  G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3967 ,  H01F10/3277

摘要： An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.

摘要翻译： 交换耦合磁性结构包括强磁性层，用于偏置铁磁性层的磁化的钴铁氧体的矫顽铁氧体层以及邻近矫顽铁氧体层的氧化钴底层，例如氧化钴。 氧化物底层具有岩盐或尖晶石的晶格结构，并且在室温下不显示磁矩。 底层影响矫顽铁氧体层的结构，因此影响其磁特性，提供增强的矫顽力和增强的热稳定性。 结果，矫顽铁氧体层的热稳定性比没有底层要小得多的厚度。 交换耦合结构用于磁盘驱动系统读磁头中的自旋阀和磁隧道结磁阻传感器。 由于矫顽铁氧体层可以制成1nm的薄而保持热稳定性，所以传感器满足高记录密度系统的窄间隙要求。

公开(公告)号：US20070281079A1

公开(公告)日：2007-12-06

申请号：US11737701

申请日：2007-04-19

申请人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat ,  James Nix

发明人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat ,  James Nix

IPC分类号： B05D5/12

CPC分类号： G11B5/3166 ,  G11B5/3163 ,  G11B5/3196 ,  G11B5/3932 ,  G11C11/14 ,  H01L43/12

摘要： A magnetoresistive sensor having a magnetically stable free layer fabricated from a material having a positive magnetostriction such as a Co—Fe—B alloy. Although the free layer is fabricated from a material that has a positive magnetostriction, which would ordinarily make the free layer unstable, the magnetization of the free layer remains stable because of an induced magnetic anisotropy that has an easy axis of magnetization oriented parallel to the Air-bearing Surface (ABS). This magnetic anisotropy of the free layer is induced by an anisotropic texturing of the surface of the free layer. The resulting anisotropic surface texture is produced by an ion milling process that utilizes an ion beam directed at an acute angle relative to the normal to the surface of the wafer whereon the sensor is fabricated while the wafer is held on a stationary chuck. This angled, static ion milling produces an anisotropic surface texture, or roughness, of the free layer, which results in the above described magnetic anisotropy with an easy axis of magnetization in a desired orientation.

摘要翻译： 具有由具有正磁致伸缩性的材料制成的磁稳定自由层的磁阻传感器，例如Co-Fe-B合金。 尽管自由层由具有正磁致伸缩的材料制成，这通常会使自由层不稳定，但是由于具有易磁化轴平行于空气的诱导磁各向异性，自由层的磁化保持稳定 （ABS）。 自由层的磁各向异性由自由层表面的各向异性纹理引发。 产生的各向异性表面纹理是通过离子研磨工艺产生的，该离子铣削工艺利用相对于晶片表面法线的锐角定向的离子束，其中制造传感器，同时将晶片保持在静止卡盘上。 这种成角度的静态离子铣削产生自由层的各向异性表面纹理或粗糙度，这导致上述磁各向异性，并且在所需方向上具有容易的磁化轴。

公开(公告)号：US20070139826A1

公开(公告)日：2007-06-21

申请号：US11615840

申请日：2006-12-22

申请人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat

发明人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3166 ,  G11B5/3163 ,  G11B5/3196 ,  G11B5/3932 ,  G11C11/14 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A magnetic shield for use in a magnetic head. The magnetic shield has a magnetic anisotropy associated with a magnetic easy axis of magnetization oriented substantially parallel with the air bearing surface. The magnetic anisotropy of the shield is induced by an anisotropic surface texture. This anisotropic surface texture can be formed in a surface of one or more magnetic layers of the shield, or can be formed in a surface of an under-layer on which the shield is deposited. The shield could also be constructed as a lamination of magnetic layers separated by non-magnetic layers, with the anisotropic surface texture being formed on one or more of the non-magnetic layers.

摘要翻译： 用于磁头的磁屏蔽。 磁屏蔽具有与磁性易磁化轴相关联的磁各向异性，该磁性易磁化轴基本上平行于空气轴承表面定向。 屏蔽的磁各向异性由各向异性表面纹理引起。 这种各向异性表面纹理可以形成在屏蔽的一个或多个磁性层的表面中，或者可以形成在其上沉积有屏蔽层的下层的表面中。 屏蔽也可以被构造为由非磁性层分离的磁性层的叠层，各向异性表面纹理形成在一个或多个非磁性层上。

公开(公告)号：US20070139820A1

公开(公告)日：2007-06-21

申请号：US11615837

申请日：2006-12-22

申请人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat

发明人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat

IPC分类号： G11B5/147 ,  G11B5/33 ,  H04R31/00

CPC分类号： G11B5/3166 ,  G11B5/3163 ,  G11B5/3196 ,  G11B5/3932 ,  G11C11/14 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A magnetic write head for magnetic data recording. The magnetic write head has a write pole with a magnetic anisotropy induced by an angled, directional ion milling of a seed layer. The magnetic anisotropy is such that a magnetic easy axis of magnetization is oriented substantially parallel with the air bearing surface (ABS) of the write head. This orientation of the easy axis of magnetization increases the write speed and data rate of the write head by increasing the speed with which the magnetization of the write pole can switch from one direction to another writing.

摘要翻译： 用于磁数据记录的磁写头。 磁写头具有由种子层的倾斜的定向离子铣削引起的具有磁各向异性的写极。 磁各向异性使得易磁化磁化轴取向为大致平行于写入头的空气轴承表面（ABS）。 易磁化轴的这种取向通过增加写磁极的磁化从一个方向转换到另一个写入的速度来增加写入头的写入速度和数据速率。

公开(公告)号：US20070138002A1

公开(公告)日：2007-06-21

申请号：US11615865

申请日：2006-12-22

申请人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat

发明人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat

IPC分类号： C23C14/00

CPC分类号： G11B5/3166 ,  G11B5/3163 ,  G11B5/3196 ,  G11B5/3932 ,  G11C11/14 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A method for manufacturing a magnetic layer with a magnetic anisotropy. The method includes an endpoint detection process for determining an end point to carefully control the final thickness of the magnetic layer. The method includes depositing a magnetic layer and then depositing a sacrificial layer over the magnetic layer. A low power angled ion milling is then performed until the magnetic layer has been reached. The angled ion milling can be performed at an angle relative to normal and without rotation in order to form an anisotropic surface texture that induces a magnetic anisotropy in the magnetic layer. An indicator layer may be included between the magnetic layer and the sacrificial layer in order to further improve endpoint detection.

摘要翻译： 一种制造具有磁各向异性的磁性层的方法。 该方法包括用于确定终点的端点检测过程以仔细地控制磁性层的最终厚度。 该方法包括沉积磁性层，然后在磁性层上沉积牺牲层。 然后执行低功率角度离子铣削，直到达到磁性层。 角度离子铣削可以相对于法线成角度而不旋转地进行，以形成在磁性层中引起磁各向异性的各向异性表面纹理。 为了进一步改善端点检测，可以在磁性层和牺牲层之间包括指示层。

公开(公告)号：US20070133251A1

公开(公告)日：2007-06-14

申请号：US11542086

申请日：2006-10-02

申请人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat

发明人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat

IPC分类号： G11C11/00

CPC分类号： G11B5/3166 ,  G11B5/3163 ,  G11B5/3196 ,  G11B5/3932 ,  G11C11/14 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A Magnetic Random Access Memory (MRAM) cell and array for storing data. The MRAM array includes a memory cell having a magnetic pinned layer, a magnetic free layer and a non-magnetic spacer or barrier layer sandwiched between the pinned and free layer. The pinned layer has magnetization that is pinned, and the free layer has a magnetization that is free to rotate but is stable in directions that are parallel or antiparallel with the magnetization of the pinned layer. The free layer has a magnetic anisotropy the maintains the stability of the free layer magnetization. The free layer anisotropy is induced by a surface roughness either in the surface of the free layer itself, or in the surface of the underling barrier/spacer layer. This anisotropic roughness is induced by an angled direct ion milling.

摘要翻译： 用于存储数据的磁随机存取存储器（MRAM）单元和阵列。 MRAM阵列包括具有磁性被钉扎层，磁性自由层和夹在被钉扎层和自由层之间的非磁性间隔物或阻挡层的存储单元。 钉扎层具有被钉扎的磁化，并且自由层具有自由旋转的磁化，但是在与被钉扎层的磁化平行或反平行的方向上是稳定的。 自由层具有磁各向异性，保持自由层磁化的稳定性。 自由层各向异性由自由层本身的表面或下层阻挡层/间隔层的表面中的表面粗糙度引起。 这种各向异性的粗糙度是由倾斜的直接离子铣削引起的。