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    Method for controlling a process for fabricating integrated devices
    2.
    发明授权
    Method for controlling a process for fabricating integrated devices 有权
    用于控制用于制造集成器件的工艺的方法

    公开(公告)号：US07815812B2

    公开(公告)日：2010-10-19

    申请号：US11536204

    申请日：2006-09-28

    申请人： Matthew F. Davis ,  Lei Lian ,  Barbara Schmidt

    发明人： Matthew F. Davis ,  Lei Lian ,  Barbara Schmidt

    IPC分类号： B21J19/04

    CPC分类号： G05B19/41875 ,  G05B2219/32182 ,  G05B2219/37398 ,  G05B2219/45031 ,  G05B2219/45212 ,  H01J37/32935 ,  H01L21/3065 ,  H01L22/20 ,  Y02P90/20 ,  Y02P90/22

    摘要： A method for controlling a process for fabricating integrated devices on a substrate. The method includes ex-situ and in-situ measurements of pre-etch and post-etch dimensions for structures formed on the substrate and uses the results of the measurements to adjust process recipes and to control the operational status of etch and external substrate processing equipment. In one exemplary application, the method is used during a multi-pass process for fabricating a capacitive structure of a trench capacitor.

    摘要翻译： 一种用于控制在衬底上制造集成器件的工艺的方法。 该方法包括用于在衬底上形成的结构的预蚀刻和蚀刻后尺寸的原位和原位测量，并且使用测量结果来调整工艺配方并控制蚀刻和外部衬底处理设备的操作状态 。 在一个示例性应用中，该方法在用于制造沟槽电容器的电容结构的多遍处理期间被使用。

    Neural Network Methods and Apparatuses for Monitoring Substrate Processing
    4.
    发明申请
    Neural Network Methods and Apparatuses for Monitoring Substrate Processing 审中-公开
    用于监测基板加工的神经网络方法和装置

    公开(公告)号：US20070249071A1

    公开(公告)日：2007-10-25

    申请号：US11379775

    申请日：2006-04-21

    申请人： Lei Lian ,  Vivien Chang ,  Matthew Davis ,  Quentin Walker

    发明人： Lei Lian ,  Vivien Chang ,  Matthew Davis ,  Quentin Walker

    IPC分类号： H01L21/66 ,  G01B15/00

    CPC分类号： G01B11/0625 ,  H01L22/12

    摘要： Aspects of the present invention include methods and apparatuses that may be used for monitoring substrate processing systems. One embodiment may provide an apparatus for obtaining in-situ data regarding processing of a substrate in a substrate processing chamber, comprising a data collecting assembly for acquiring training data related to a substrate disposed in a processing chamber, an electromagnetic radiation source, at least one in-situ metrology module to provide measurement data, and a computer, wherein the computer includes a neural network software, wherein the neural network software is adapted to model a relationship between the plurality of the training and other data related to substrate processing.

    摘要翻译： 本发明的方面包括可用于监测基板处理系统的方法和装置。 一个实施例可以提供一种用于获得关于衬底处理室中的衬底的处理的原位数据的装置，包括用于获取与设置在处理室中的衬底有关的训练数据的数据采集组件，电磁辐射源，至少一个 原位计量模块以提供测量数据，以及计算机，其中所述计算机包括神经网络软件，其中所述神经网络软件适于建模所述多个训练和与衬底处理相关的其它数据之间的关系。

    METHOD FOR AUTOMATIC DETERMINATION OF SEMICONDUCTOR PLASMA CHAMBER MATCHING AND SOURCE OF FAULT BY COMPREHENSIVE PLASMA MONITORING
    6.
    发明申请
    METHOD FOR AUTOMATIC DETERMINATION OF SEMICONDUCTOR PLASMA CHAMBER MATCHING AND SOURCE OF FAULT BY COMPREHENSIVE PLASMA MONITORING 有权
    用于自动确定半导体等离子体腔室匹配的方法和通过综合等离子体监测的故障源

    公开(公告)号：US20070095789A1

    公开(公告)日：2007-05-03

    申请号：US11612961

    申请日：2006-12-19

    申请人： Matthew Davis ,  Lei Lian

    发明人： Matthew Davis ,  Lei Lian

    IPC分类号： G01L21/30 ,  C23F1/00 ,  G01R31/00 ,  H01L21/306

    CPC分类号： H01J37/32174 ,  G01N21/73 ,  H01J37/32935 ,  H01J37/32972

    摘要： A method and apparatus for automatic determination of semiconductor plasma chamber matching a source of fault are provided. Correlated plasma attributes are measured for process used for calibration both in a chamber under study and in a reference chamber. Principal component analysis then is performed on the measured correlated attributes so as to generate steady principle components and transitional principle components; and these principal components are compared to reference principal components associated with a reference chamber. The process used for calibration includes a regular plasma process followed by a process perturbation of one process parameter. Similar process perturbation runs are conducted several times to include different perturbation parameters. By performing inner products of the principle components of chamber under study and the reference chamber, matching scores can be reached. Automatic chamber matching can be determined by comparing these scores with preset control limits. The potential source(s) of chamber fault can also be identified by the lowest matching score(s).

    摘要翻译： 提供了一种用于自动确定匹配故障源的半导体等离子体室的方法和装置。 测量在研究室和参考室中用于校准的过程的相关等离子体属性。 然后对测量的相关属性进行主成分分析，以产生稳定的主成分和过渡原理分量; 并且将这些主要部件与与参考室相关联的参考主要部件进行比较。 用于校准的过程包括常规等离子体处理，随后是一个过程参数的过程扰动。 进行几次相似的过程扰动运行，以包括不同的扰动参数。 通过执行被研究室和参考室的主要部件的内部产物，可以达到匹配分数。 可以通过将这些分数与预设的控制限制进行比较来确定自动室匹配。 室故障的潜在来源也可以通过最低匹配得分识别。

    Method for automatic determination of substrates states in plasma processing chambers
    7.
    发明申请
    Method for automatic determination of substrates states in plasma processing chambers 失效
    自动测定等离子体处理室中基片状态的方法

    公开(公告)号：US20060028646A1

    公开(公告)日：2006-02-09

    申请号：US10939158

    申请日：2004-09-10

    申请人： Matthew Davis ,  Lei Lian ,  Quentin Walker

    发明人： Matthew Davis ,  Lei Lian ,  Quentin Walker

    IPC分类号： G01N21/55 ,  G01B11/28

    CPC分类号： H01J37/32972 ,  G01B11/24 ,  G01N21/45 ,  G01N21/55 ,  G01N21/8422 ,  G01N2021/8416 ,  G01N2201/1222 ,  G01N2201/129 ,  H01J37/32935

    摘要： A method for automatic determination of a state of a substrate in a plasma processing chamber is provided. Substrate reflectance data is collected in a processing chamber prior to processing to be analyzed with reference reflectance data to determine if the substrate state meets a control criterion. The substrate state may define the thickness and the qualities of the films on the substrate, the critical dimensions of the different layers on the substrate. The reflectance data is analyzed using a multi-variant analysis technique, such as principle component analysis. In addition to analyzing substrate state prior to processing, substrate reflectance could also be collected in a processing chamber during processing to be analyzed with reference reflectance data to further determine if the substrate state and/or the substrate processing are meeting a control criterion.

    摘要翻译： 提供了一种用于自动确定等离子体处理室中的基板的状态的方法。 在处理之前将基板反射率数据收集在处理室中，以用参考反射率数据进行分析，以确定衬底状态是否满足控制标准。 衬底状态可以限定衬底上的膜的厚度和质量，衬底上不同层的临界尺寸。 使用多变量分析技术分析反射率数据，例如主成分分析。 除了在处理之前分析衬底状态之外，衬底反射率也可以在处理期间被收集在处理室中，以用参考反射率数据进行分析，以进一步确定衬底状态和/或衬底处理是否满足控制标准。

    Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring
    9.
    发明申请
    Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring 失效
    通过综合等离子体监测自动确定半导体等离子体室匹配和故障源的方法

    公开(公告)号：US20050019961A1

    公开(公告)日：2005-01-27

    申请号：US10628001

    申请日：2003-07-25

    申请人： Matthew Davis ,  Lei Lian

    发明人： Matthew Davis ,  Lei Lian

    IPC分类号： G01N21/73 ,  H01J37/32 ,  H01L21/00

    CPC分类号： H01J37/32174 ,  G01N21/73 ,  H01J37/32935 ,  H01J37/32972

    摘要： A method and apparatus for automatic determination of semiconductor plasma chamber matching a source of fault are provided. Correlated plasma attributes are measured for process used for calibration both in a chamber under study and in a reference chamber. Principal component analysis then is performed on the measured correlated attributes so as to generate steady principle components and transitional principle components; and these principal components are compared to reference principal components associated with a reference chamber. The process used for calibration includes a regular plasma process followed by a process perturbation of one process parameter. Similar process perturbation runs are conducted several times to include different perturbation parameters. By performing inner products of the principle components of chamber under study and the reference chamber, matching scores can be reached. Automatic chamber matching can be determined by comparing these scores with preset control limits. The potential source(s) of chamber fault can also be identified by the lowest matching score(s).

    摘要翻译： 提供了一种用于自动确定匹配故障源的半导体等离子体室的方法和装置。 测量在研究室和参考室中用于校准的过程的相关等离子体属性。 然后对测量的相关属性进行主成分分析，以产生稳定的主成分和过渡原理分量; 并且将这些主要部件与与参考室相关联的参考主要部件进行比较。 用于校准的过程包括常规等离子体处理，随后是一个过程参数的过程扰动。 进行几次相似的过程扰动运行，以包括不同的扰动参数。 通过执行被研究室和参考室的主要部件的内部产物，可以达到匹配分数。 可以通过将这些分数与预设的控制限制进行比较来确定自动室匹配。 室故障的潜在来源也可以通过最低匹配得分识别。

    WITHIN-SEQUENCE METROLOGY BASED PROCESS TUNING FOR ADAPTIVE SELF-ALIGNED DOUBLE PATTERNING
    10.
    发明申请
    WITHIN-SEQUENCE METROLOGY BASED PROCESS TUNING FOR ADAPTIVE SELF-ALIGNED DOUBLE PATTERNING 失效
    用于自适应自对准双向图案的基于量子的方法调整

    公开(公告)号：US20100009470A1

    公开(公告)日：2010-01-14

    申请号：US12172106

    申请日：2008-07-11

    申请人： Matthew F. Davis ,  Thorsten B. Lill ,  Lei Lian

    发明人： Matthew F. Davis ,  Thorsten B. Lill ,  Lei Lian

    IPC分类号： H01L21/00 ,  C23F1/00

    CPC分类号： H01L21/67207 ,  B82Y10/00 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An apparatus for adaptive self-aligned dual patterning and method thereof. The method includes providing a substrate to a processing platform configured to perform an etch process and a deposition process and a metrology unit configured for in-vacuo critical dimension (CD) measurement. The in-vacuo CD measurement is utilized for feedforward adaptive control of the process sequence processing platform or for feedback and feedforward adaptive control of chamber process parameters. In one aspect, a first layer of a multi-layered masking stack is etched to form a template mask, an in-vacuo CD measurement of the template mask is made, and a spacer is formed, adjacent to the template mask, to a width that is dependent on the CD measurement of the template mask.

    摘要翻译： 一种用于自适应自对准双重图案化的装置及其方法。 该方法包括向被配置为执行蚀刻工艺和沉积工艺的处理平台提供衬底以及配置用于真空临界尺寸（CD）测量）的测量单元。 真空CD测量用于过程序列处理平台的前馈自适应控制或者用于反馈和前馈自适应控制室工艺参数。 在一个方面，蚀刻多层掩模叠层的第一层以形成模板掩模，制成模板掩模的真空中的CD测量，并且将与模板掩模相邻的间隔物形成为宽度 这取决于模板掩码的CD测量。