公开(公告)号：US08047706B2

公开(公告)日：2011-11-01

申请号：US12273440

申请日：2008-11-18

申请人： Matthew G. Goodman ,  Mark Hawkins ,  Ravinder Aggarwal ,  Michael Givens ,  Eric Hill ,  Gregory Bartlett

发明人： Matthew G. Goodman ,  Mark Hawkins ,  Ravinder Aggarwal ,  Michael Givens ,  Eric Hill ,  Gregory Bartlett

IPC分类号： G01K15/00

CPC分类号： G01K15/00

摘要： Methods and systems for calibrating a temperature control system in a vapor deposition chamber. A temperature sensor senses temperature within a semiconductor processing chamber and generates an output signal. A temperature control system controls a chamber temperature by controlling a heating apparatus based on the output signal. A method includes instructing the control system to target a setpoint temperature, and depositing a layer of material onto a surface in the chamber by a vapor deposition process. A variation of a property of the layer is measured while depositing the layer, the property known to vary cyclically as a thickness of the layer increases. The measured property is allowed to vary cyclically for one or more cycles. If there is a difference between a time period of one or more of the cycles and an expected time period associated with the setpoint temperature, the temperature control system is adjusted based on the difference.

摘要翻译： 用于校准气相沉积室中的温度控制系统的方法和系统。 温度传感器感测半导体处理室内的温度并产生输出信号。 温度控制系统通过基于输出信号控制加热装置来控制室温度。 一种方法包括指示控制系统目标设定点温度，以及通过气相沉积工艺将一层材料沉积在腔室的表面上。 在沉积层时测量该层的性质的变化，已知随着层的厚度周期性变化的性质增加。 允许测量的特性循环变化一个或多个循环。 如果一个或多个循环的时间段与与设定点温度相关联的期望时间段之间存在差异，则基于该差异来调整温度控制系统。

公开(公告)号：US20050193952A1

公开(公告)日：2005-09-08

申请号：US11057111

申请日：2005-02-11

申请人： Matt Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory Bartlett ,  Joseph Italiano ,  Bob Haro

发明人： Matt Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory Bartlett ,  Joseph Italiano ,  Bob Haro

IPC分类号： C23C16/00 ,  C23C16/458 ,  C30B25/12 ,  C30B25/14 ,  H01L21/00 ,  H01L21/687

CPC分类号： H01L21/68735 ,  H01J37/32871 ,  H01L21/67028

摘要： A substrate support system comprises a relatively thin circular substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder includes a single substrate support ledge or a plurality of substrate support spacer vanes configured to support a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. The vanes can be angled to resist backside deposition of reactant gases as the substrate holder is rotated. A hollow support member provides support to an underside of the substrate holder. The hollow support member is configured to convey gas (e.g., inert gas or cleaning gas) upward into one or more of the passages of the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment of the invention, the gas in the gap can then flow either (1) outward and upward around the substrate edge or (2) downward through passages of the substrate holder, if any, that do not lead back into the hollow support member. The gas that flows outward and upward around the substrate edge inhibits backside deposition of reactant gases above the substrate. The gas that flows downward through the passages that do not lead back to the support member advantageously inhibits autodoping by sweeping out-diffused dopant atoms away from the substrate front side. In one embodiment, the support member comprises a hollow multi-armed support spider that conveys gas into selected ones of the passages. In another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all of the passages. In yet another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all but one or more of the passages.

摘要翻译： 衬底支撑系统包括相对薄的圆形衬底保持器，其具有在其顶表面和底表面之间延伸的多个通道。 衬底保持器包括单个衬底支撑凸缘或多个衬底支撑间隔器叶片，其构造成支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。 当基板保持器旋转时，叶片可以成角度以抵抗反应气体的背面沉积。 中空的支撑构件为衬底保持器的下侧提供支撑。 中空支撑构件被构造成将气体（例如，惰性气体或清洁气体）向上输送到衬底保持器的一个或多个通道中。 向上输送的气体流入基板和基板支架之间的间隙。 根据本发明的实施例，间隙中的气体然后可以（1）围绕衬底边缘向外和向上流动，或者（2）向下通过衬底保持器的通道（如果有的话），其不会引导回到空心 支持会员 在衬底边缘周围向外和向上流动的气体阻止在衬底上方的反应物气体的背面沉积。 通过通道向下流动的气体不会返回到支撑构件，有利地通过从扩散的掺杂​​剂原子远离衬底正面来扫除自发掺杂。 在一个实施例中，支撑构件包括将气体输送到选定的通道中的中空多臂支撑蜘蛛。 在另一个实施例中，支撑构件包括将气体向上输送到所有通道中的碗形或杯状结构。 在另一个实施例中，支撑构件包括碗形或杯状结构，其将气体向上输送到除了一个或多个通道中的所有通道中。

公开(公告)号：US20140060147A1

公开(公告)日：2014-03-06

申请号：US13597043

申请日：2012-08-28

申请人： Michael Christopher Sarin ,  Rafael Mendez ,  Gregory Bartlett ,  Eric Hill ,  Keith R. Lawson ,  Andy Rosser

发明人： Michael Christopher Sarin ,  Rafael Mendez ,  Gregory Bartlett ,  Eric Hill ,  Keith R. Lawson ,  Andy Rosser

IPC分类号： G01F25/00 ,  F17D1/00

CPC分类号： F17D1/00 ,  G01F25/00 ,  Y02E60/34 ,  Y10T137/0324 ,  Y10T137/7722

摘要： A method and system are disclosed for verifying the flow rate of gas through a mass flow controller, such as a mass flow controller used with a tool for semiconductor or solar cell fabrication. To verify the mass flow rate measured by the mass flow controller, gas passing through the mass flow controller is also passed through a mass flow meter. The measured flow rate through the mass flow controller is compared to the measured flow rate through the mass flow meter and any difference between the two measured flow rates is determined. Depending upon the magnitude of any difference, the flow of gas to the mass flow controller may be altered.

摘要翻译： 公开了一种用于验证气体通过质量流量控制器的流量的方法和系统，例如与用于半导体或太阳能电池制造的工具一起使用的质量流量控制器。 为了验证由质量流量控制器测量的质量流量，通过质量流量控制器的气体也通过质量流量计。 将通过质量流量控制器的测量流量与通过质量流量计的测量流量进行比较，并确定两个测量流量之间的任何差异。 根据任何差异的大小，可以改变气体流向质量流量控制器的流量。

公开(公告)号：USD347619S

公开(公告)日：1994-06-07

申请号：US2639

申请日：1992-12-15

申请人： Kenneth VanHorn ,  Gregory Bartlett ,  Floyd Mills

设计人： Kenneth VanHorn ,  Gregory Bartlett ,  Floyd Mills