WAFER SUPPORT SYSTEM
    2.
    发明申请
    WAFER SUPPORT SYSTEM 失效
    WAFER支持系统

    公开(公告)号:US20070131173A1

    公开(公告)日:2007-06-14

    申请号:US11668409

    申请日:2007-01-29

    IPC分类号: C23C16/00

    摘要: A wafer support system comprising a susceptor having top and bottom sections and gas flow passages therethrough. One or more spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers.

    摘要翻译: 一种晶片支撑系统,其包括具有顶部和底部部分以及穿过其的气体流动通道的基座。 从形成在基座的顶部的凹部突出的一个或多个间隔件相对于凹部以间隔的关系支撑晶片。 吹扫气体被引入到基座的底部,并且穿过气体流动通道,以在凹槽中的至少一个圆形阵列的出口和在间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进,以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域,以引起隔离物周围的保护性吹扫气体的连续流动。

    Substrate support system for reduced autodoping and backside deposition
    4.
    发明申请
    Substrate support system for reduced autodoping and backside deposition 有权
    用于减少自动掺杂和背面沉积的基板支撑系统

    公开(公告)号:US20050193952A1

    公开(公告)日:2005-09-08

    申请号:US11057111

    申请日:2005-02-11

    摘要: A substrate support system comprises a relatively thin circular substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder includes a single substrate support ledge or a plurality of substrate support spacer vanes configured to support a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. The vanes can be angled to resist backside deposition of reactant gases as the substrate holder is rotated. A hollow support member provides support to an underside of the substrate holder. The hollow support member is configured to convey gas (e.g., inert gas or cleaning gas) upward into one or more of the passages of the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment of the invention, the gas in the gap can then flow either (1) outward and upward around the substrate edge or (2) downward through passages of the substrate holder, if any, that do not lead back into the hollow support member. The gas that flows outward and upward around the substrate edge inhibits backside deposition of reactant gases above the substrate. The gas that flows downward through the passages that do not lead back to the support member advantageously inhibits autodoping by sweeping out-diffused dopant atoms away from the substrate front side. In one embodiment, the support member comprises a hollow multi-armed support spider that conveys gas into selected ones of the passages. In another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all of the passages. In yet another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all but one or more of the passages.

    摘要翻译: 衬底支撑系统包括相对薄的圆形衬底保持器,其具有在其顶表面和底表面之间延伸的多个通道。 衬底保持器包括单个衬底支撑凸缘或多个衬底支撑间隔器叶片,其构造成支撑衬底背面的周边部分,使得在衬底和衬底保持器之间形成薄的间隙。 当基板保持器旋转时,叶片可以成角度以抵抗反应气体的背面沉积。 中空的支撑构件为衬底保持器的下侧提供支撑。 中空支撑构件被构造成将气体(例如,惰性气体或清洁气体)向上输送到衬底保持器的一个或多个通道中。 向上输送的气体流入基板和基板支架之间的间隙。 根据本发明的实施例,间隙中的气体然后可以(1)围绕衬底边缘向外和向上流动,或者(2)向下通过衬底保持器的通道(如果有的话),其不会引导回到空心 支持会员 在衬底边缘周围向外和向上流动的气体阻止在衬底上方的反应物气体的背面沉积。 通过通道向下流动的气体不会返回到支撑构件,有利地通过从扩散的掺杂​​剂原子远离衬底正面来扫除自发掺杂。 在一个实施例中,支撑构件包括将气体输送到选定的通道中的中空多臂支撑蜘蛛。 在另一个实施例中,支撑构件包括将气体向上输送到所有通道中的碗形或杯状结构。 在另一个实施例中,支撑构件包括碗形或杯状结构,其将气体向上输送到除了一个或多个通道中的所有通道中。