Calibration of temperature control system for semiconductor processing chamber
    1.
    发明授权
    Calibration of temperature control system for semiconductor processing chamber 有权
    半导体处理室温度控制系统校准

    公开(公告)号:US08047706B2

    公开(公告)日:2011-11-01

    申请号:US12273440

    申请日:2008-11-18

    IPC分类号: G01K15/00

    CPC分类号: G01K15/00

    摘要: Methods and systems for calibrating a temperature control system in a vapor deposition chamber. A temperature sensor senses temperature within a semiconductor processing chamber and generates an output signal. A temperature control system controls a chamber temperature by controlling a heating apparatus based on the output signal. A method includes instructing the control system to target a setpoint temperature, and depositing a layer of material onto a surface in the chamber by a vapor deposition process. A variation of a property of the layer is measured while depositing the layer, the property known to vary cyclically as a thickness of the layer increases. The measured property is allowed to vary cyclically for one or more cycles. If there is a difference between a time period of one or more of the cycles and an expected time period associated with the setpoint temperature, the temperature control system is adjusted based on the difference.

    摘要翻译: 用于校准气相沉积室中的温度控制系统的方法和系统。 温度传感器感测半导体处理室内的温度并产生输出信号。 温度控制系统通过基于输出信号控制加热装置来控制室温度。 一种方法包括指示控制系统目标设定点温度,以及通过气相沉积工艺将一层材料沉积在腔室的表面上。 在沉积层时测量该层的性质的变化,已知随着层的厚度周期性变化的性质增加。 允许测量的特性循环变化一个或多个循环。 如果一个或多个循环的时间段与与设定点温度相关联的期望时间段之间存在差异,则基于该差异来调整温度控制系统。

    Localized heating of substrates using optics
    2.
    发明授权
    Localized heating of substrates using optics 有权
    使用光学元件的基板的局部加热

    公开(公告)号:US06879777B2

    公开(公告)日:2005-04-12

    申请号:US10265519

    申请日:2002-10-03

    IPC分类号: H01L21/00 F26B3/30

    CPC分类号: H01L21/67115

    摘要: An apparatus for processing a semiconductor substrate, including a process chamber having a plurality of walls and a substrate support to support the substrate within the process chamber. A radiative heat source is positioned outside the process chamber to heat the substrate through the walls when the substrate is positioned on the substrate support. In some embodiments, lenses are positioned between the heat source and the substrate to focus or diffuse radiation from the heat source and thereby selectively alter the radiation intensity incident on certain portions of the substrate. In other embodiments, diffusing surfaces are positioned between the heat source and the substrate to diffuse radiation from the heat source and thereby selectively reduce the radiation intensity incident on certain portions of the substrate.

    摘要翻译: 一种用于处理半导体衬底的设备,包括具有多个壁的处理室和用于在处理室内支撑衬底的衬底支撑件。 当衬底定位在衬底支撑件上时,辐射热源位于处理室外部以通过壁加热衬底。 在一些实施例中,透镜位于热源和基板之间,以聚焦或散射来自热源的辐射,从而选择性地改变入射在基板的某些部分上的辐射强度。 在其它实施例中,扩散表面位于热源和衬底之间以扩散来自热源的辐射,从而选择性地降低入射到衬底的某些部分上的辐射强度。

    SUBSTRATE HOLDER WITH VARYING DENSITY
    3.
    发明申请
    SUBSTRATE HOLDER WITH VARYING DENSITY 审中-公开
    具有不同密度的基座

    公开(公告)号:US20100107974A1

    公开(公告)日:2010-05-06

    申请号:US12266317

    申请日:2008-11-06

    IPC分类号: B05C13/02

    摘要: A substrate support system comprises a substrate holder for supporting a substrate. The substrate holder comprises an interior portion sized and shaped to extend beneath most or all of a substrate supported on the substrate holder. The substrate holder has mass density that varies, preferably in order to compensate for variations in substrate temperature owing to surface geometry variations of the interior portion, so as to provide a more uniform thermal coupling between the substrate and substrate holder. The substrate holder is preferably configured to be spaced further apart from a substrate at the center than at the outer perimeter.

    摘要翻译: 衬底支撑系统包括用于支撑衬底的衬底支架。 衬底保持器包括尺寸和形状以在支撑在衬底保持器上的基底的大部分或全部下延伸的内部部分。 衬底保持器具有变化的质量密度,优选地为了补偿由于内部部分的表面几何形状变化引起的衬底温度的变化,从而在衬底和衬底保持器之间提供更均匀的热耦合。 衬底保持器优选地构造成在中心处比在外周距离衬底更远地分开。

    Substrate holder with deep annular groove to prevent edge heat loss
    6.
    发明授权
    Substrate holder with deep annular groove to prevent edge heat loss 有权
    底座支架具有深环形槽,防止边缘热损失

    公开(公告)号:US06709267B1

    公开(公告)日:2004-03-23

    申请号:US10331444

    申请日:2002-12-27

    IPC分类号: F27D500

    摘要: A substrate holder for processing a semiconductor substrate includes a deep, generally vertical annular groove configured to impede the radial flow of heat within the holder and reduce heat loss from the annular side edge of the holder. The holder includes one or more support elements, such as a flat contiguous surface or a plurality of protrusions defined by intersecting grooves. The one or more support elements are configured to support a substrate a particular size in a support plane defined by the one or more support elements. The groove is configured to surround an outer edge of the substrate when the substrate is supported on the one or more support elements. In a preferred embodiment, the groove has a depth of at least 25% of the thickness of the substrate holder.

    摘要翻译: 用于处理半导体衬底的衬底保持器包括深的大致垂直的环形槽,其被构造成阻止保持器内的热量的径向流动并减少从保持器的环形侧边缘的热损失。 保持器包括一个或多个支撑元件,例如平坦的邻接表面或由相交槽限定的多个突起。 一个或多个支撑元件构造成在由一个或多个支撑元件限定的支撑平面中支撑特定尺寸的基板。 当衬底被支撑在一个或多个支撑元件上时,凹槽被构造成围绕衬底的外边缘。 在优选实施例中,凹槽的深度至少为衬底保持器的厚度的25%。

    Susceptor pocket profile to improve process performance
    7.
    发明授权
    Susceptor pocket profile to improve process performance 有权
    Susceptor口袋轮廓提高过程性能

    公开(公告)号:US06840767B2

    公开(公告)日:2005-01-11

    申请号:US10744848

    申请日:2003-12-22

    摘要: An apparatus and method to position a wafer onto a wafer holder and to maintain a uniform wafer temperature is disclosed. The wafer holder or susceptor comprises a recess or pocket whose surface is concave and includes a grid containing a plurality of grid grooves separating protrusions. The concavity and grid grooves define an enclosed flow volume between a supported wafer and the susceptor surface, as well as an escape area, or total cross-sectional area of the grid grooves opening out from under the periphery of the wafer. These are chosen to reduce the wafer slide and curl during wafer drop-off and wafer stick during wafer pick-up, while improving thermal uniformity and reducing particle problems. In another embodiment, centering locators in the form of thin, radially placed protrusions are provided around the edge of the susceptor pocket to reduce further the possibility of contact between the wafer and the outer edge of the susceptor. These features help to achieve temperature uniformity, and therefore quality of the process result, across the wafer during processing.

    摘要翻译: 公开了一种将晶片定位在晶片保持器上并保持均匀的晶片温度的装置和方法。 晶片保持器或基座包括其表面是凹形的凹槽或凹槽,并且包括包含多个分隔凸起的格栅槽的格栅。 凹槽和格栅槽在支撑的晶片和基座表面之间限定封闭的流体积,以及从晶片周边开出的栅格槽的逸出区域或总横截面面积。 这些选择用于在晶片吸收期间在晶片脱落和晶片棒期间减少晶片滑动和卷曲,同时提高热均匀性并减少颗粒问题。 在另一个实施例中,围绕基座袋的边缘设置呈细径向放置的突起形式的定心定位器,以进一步减小晶片与基座的外边缘之间的接触的可能性。 这些特征有助于在加工过程中在晶片上实现温度均匀性,从而达到加工效果的质量。

    Wafer holder with peripheral lift ring
    9.
    发明授权
    Wafer holder with peripheral lift ring 有权
    带外围电梯环的晶圆架

    公开(公告)号:US06776849B2

    公开(公告)日:2004-08-17

    申请号:US10100308

    申请日:2002-03-15

    IPC分类号: H01L2100

    摘要: A wafer holder for supporting a wafer within a CVD processing chamber includes a vertically moveable lift ring configured to support the bottom peripheral surface of the wafer, and an inner plug having a top flat surface configured to support the wafer during wafer processing. The lift ring has a central aperture configured to closely surround the inner plug. When a wafer is to be loaded onto the wafer holder, the lift ring is elevated above the inner plug. The wafer is loaded onto the lift ring in the elevated position. Then, the lift ring is maintained in the elevated position for a time period sufficient to allow the wafer temperature to rise to a level that is sufficient to significantly reduce or even substantially prevent thermal shock to the wafer when the wafer is brought into contact with the inner plug. The lift ring is then lowered into surrounding engagement with the inner plug. This is the wafer processing position of the wafer holder.

    摘要翻译: 用于在CVD处理室内支撑晶片的晶片保持器包括构造成支撑晶片的底部周边表面的可垂直移动的提升环,以及配置成在晶片处理期间支撑晶片的顶部平坦表面的内部插塞。 提升环具有构造成紧密围绕内塞的中心孔。 当将晶片装载到晶片保持器上时,升降环升高到内塞上方。 晶片在提升位置被装载到提升环上。 然后,提升环保持在升高位置一段足以允许晶片温度上升至足以显着降低甚至基本上防止晶片对晶片的热冲击的水平的时间,当晶片与 内塞 然后升降环下降到与内塞的周围接合。 这是晶片保持器的晶片加工位置。

    Wafer holder with stiffening rib
    10.
    发明授权

    公开(公告)号:US07070660B2

    公开(公告)日:2006-07-04

    申请号:US10139098

    申请日:2002-05-03

    IPC分类号: H01L21/00 C23C16/00

    摘要: A wafer holder comprises a circular, disc-shaped main portion and a rib extending generally downward from a lower surface of the main portion. The rib encircles the vertical center axis of the wafer holder. The upper surface of the main portion has a wafer-receiving pocket defined by an inner pocket surface surrounded by an outer shoulder. The rib is closed to completely surround a vertical center axis of the main portion. The rib helps to prevent the main portion from inducing symmetric concavity during the manufacture of the wafer holder. In other words, the rib helps to maintain the flatness of the upper surface of the outer shoulder while the main portion is made symmetrically concave.