公开(公告)号：US20130177928A1

公开(公告)日：2013-07-11

申请号：US13511168

申请日：2010-11-23

申请人： Jon Peterson ,  Giannoula Klement ,  Joseph Italiano ,  Sean Downing

发明人： Jon Peterson ,  Giannoula Klement ,  Joseph Italiano ,  Sean Downing

IPC分类号： G01N33/68 ,  G01N33/74

CPC分类号： G01N33/6887 ,  G01N33/74 ,  G01N33/80 ,  G01N33/96

摘要： Described herein are methods useful for normalizing any biomarker in platelets. This has application in any method in which one wishes to ascertain or compare the level of a biomarker, e.g., for diagnostic or prognostic methods relating to a biomarker of interest. Using such an approach can permit the assessment of disease status (e.g., angiogenic status) of an individual with less error than an expression value that is not normalized or that is normalized to total protein levels. Also provided are methods for selecting a normalizing protein for normalizing biomarkers in a sample, e.g., a platelet sample.

摘要翻译： 本文描述的是用于对血小板中任何生物标志物进行归一化的方法。 这可以以希望确定或比较生物标志物的水平的任何方法的应用，例如用于与感兴趣的生物标志物相关的诊断或预后方法。 使用这种方法可以允许评估患者的疾病状态（例如，血管生成状态），其误差小于未被归一化或被标准化为总蛋白质水平的表达值。 还提供了选择用于标准化样品（例如血小板样品）中的生物标志物的归一化蛋白质的方法。

公开(公告)号：US07816236B2

公开(公告)日：2010-10-19

申请号：US11343264

申请日：2006-01-30

申请人： Matthias Bauer ,  Chantal Arena ,  Ronald Bertram ,  Pierre Tomasini ,  Nyles Cody ,  Paul Brabant ,  Joseph Italiano ,  Paul Jacobson ,  Keith Doran Weeks

发明人： Matthias Bauer ,  Chantal Arena ,  Ronald Bertram ,  Pierre Tomasini ,  Nyles Cody ,  Paul Brabant ,  Joseph Italiano ,  Paul Jacobson ,  Keith Doran Weeks

IPC分类号： H01L21/20

CPC分类号： H01L29/7848 ,  C23C16/04 ,  C23C16/22 ,  C23C16/24 ,  C23C16/32 ,  C23C16/325 ,  C23C16/45512 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/32056 ,  H01L21/3215 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.

摘要翻译： 化学气相沉积方法使用丙硅烷和含卤素蚀刻剂源（例如氯）在混合基底的选定区域上选择性沉积含Si膜。 掺杂源可以与丙硅烷和蚀刻剂源混合以选择性沉积掺杂的含Si薄膜。 选择性沉积方法可用于各种应用，例如半导体制造。

公开(公告)号：US20070224786A1

公开(公告)日：2007-09-27

申请号：US11755528

申请日：2007-05-30

申请人： Paul Brabant ,  Joseph Italiano ,  Chantal Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

发明人： Paul Brabant ,  Joseph Italiano ,  Chantal Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC分类号： H01L21/36

CPC分类号： C30B25/02 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262

摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

摘要翻译： 用于沉积诸如外延Ge和SiGe膜的外延膜的方法。 在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。 导致平滑，薄，相对缺陷的Ge或SiGe层。 还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

公开(公告)号：US09795965B2

公开(公告)日：2017-10-24

申请号：US14758915

申请日：2013-11-20

申请人： BRIGHAM AND WOMEN'S HOSPITAL, INC. ,  PRESIDENT AND FELLOWS OF HARVARD COLLEGE ,  VILNIUS UNIVERSITY ,  Joseph Italiano ,  Linas Mazutis ,  Jonathan N. Thon ,  David A. Weitz

发明人： Joseph Italiano ,  Linas Mazutis ,  Jonathan N. Thon ,  David A. Weitz

IPC分类号： G01N33/86 ,  G01N33/48 ,  B01L3/00 ,  C12M1/12 ,  C12M1/34 ,  C12M3/06 ,  C12M1/00 ,  C12M1/32 ,  C12N5/078 ,  G01N33/49

CPC分类号： B01L3/502753 ,  B01L3/502746 ,  B01L3/502776 ,  B01L2200/0647 ,  B01L2200/0668 ,  B01L2300/0681 ,  B01L2300/0816 ,  B01L2400/086 ,  C12M23/16 ,  C12M23/20 ,  C12M25/02 ,  C12M29/04 ,  C12M29/10 ,  C12M29/20 ,  C12M41/36 ,  C12M41/40 ,  G01N33/491 ,  G01N33/86 ,  G01N2800/222 ,  Y10T436/25375

摘要： A system and method are provided for harvesting target biological substances. The system includes a substrate and a first and second channel formed in the substrate. The channels longitudinally extending substantially parallel to each other. A series of gaps extend from the first channel to the second channel to create a fluid communication path passing between a series of columns with the columns being longitudinally separated by a predetermined separation distance. The system also includes a first source configured to selectively introduce into the first channel a first biological composition at a first channel flow rate and a second source configured to selectively introduce into the second channel a second biological composition at a second channel flow rate. The sources are configured to create a differential between the first and second channel flow rates to generate physiological shear rates along the second channel that are bounded within a predetermined range.

公开(公告)号：US20060281322A1

公开(公告)日：2006-12-14

申请号：US11506320

申请日：2006-08-18

申请人： Paul Brabant ,  Joseph Italiano ,  Chantal Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

发明人： Paul Brabant ,  Joseph Italiano ,  Chantal Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC分类号： H01L21/461

CPC分类号： C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02661

摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

公开(公告)号：US20050193952A1

公开(公告)日：2005-09-08

申请号：US11057111

申请日：2005-02-11

申请人： Matt Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory Bartlett ,  Joseph Italiano ,  Bob Haro

发明人： Matt Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory Bartlett ,  Joseph Italiano ,  Bob Haro

IPC分类号： C23C16/00 ,  C23C16/458 ,  C30B25/12 ,  C30B25/14 ,  H01L21/00 ,  H01L21/687

CPC分类号： H01L21/68735 ,  H01J37/32871 ,  H01L21/67028

摘要： A substrate support system comprises a relatively thin circular substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder includes a single substrate support ledge or a plurality of substrate support spacer vanes configured to support a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. The vanes can be angled to resist backside deposition of reactant gases as the substrate holder is rotated. A hollow support member provides support to an underside of the substrate holder. The hollow support member is configured to convey gas (e.g., inert gas or cleaning gas) upward into one or more of the passages of the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment of the invention, the gas in the gap can then flow either (1) outward and upward around the substrate edge or (2) downward through passages of the substrate holder, if any, that do not lead back into the hollow support member. The gas that flows outward and upward around the substrate edge inhibits backside deposition of reactant gases above the substrate. The gas that flows downward through the passages that do not lead back to the support member advantageously inhibits autodoping by sweeping out-diffused dopant atoms away from the substrate front side. In one embodiment, the support member comprises a hollow multi-armed support spider that conveys gas into selected ones of the passages. In another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all of the passages. In yet another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all but one or more of the passages.

摘要翻译： 衬底支撑系统包括相对薄的圆形衬底保持器，其具有在其顶表面和底表面之间延伸的多个通道。 衬底保持器包括单个衬底支撑凸缘或多个衬底支撑间隔器叶片，其构造成支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。 当基板保持器旋转时，叶片可以成角度以抵抗反应气体的背面沉积。 中空的支撑构件为衬底保持器的下侧提供支撑。 中空支撑构件被构造成将气体（例如，惰性气体或清洁气体）向上输送到衬底保持器的一个或多个通道中。 向上输送的气体流入基板和基板支架之间的间隙。 根据本发明的实施例，间隙中的气体然后可以（1）围绕衬底边缘向外和向上流动，或者（2）向下通过衬底保持器的通道（如果有的话），其不会引导回到空心 支持会员 在衬底边缘周围向外和向上流动的气体阻止在衬底上方的反应物气体的背面沉积。 通过通道向下流动的气体不会返回到支撑构件，有利地通过从扩散的掺杂​​剂原子远离衬底正面来扫除自发掺杂。 在一个实施例中，支撑构件包括将气体输送到选定的通道中的中空多臂支撑蜘蛛。 在另一个实施例中，支撑构件包括将气体向上输送到所有通道中的碗形或杯状结构。 在另一个实施例中，支撑构件包括碗形或杯状结构，其将气体向上输送到除了一个或多个通道中的所有通道中。

公开(公告)号：US20050092235A1

公开(公告)日：2005-05-05

申请号：US10993024

申请日：2004-11-18

申请人： Paul Brabant ,  Joseph Italiano ,  Chantal Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

发明人： Paul Brabant ,  Joseph Italiano ,  Chantal Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC分类号： C30B1/00 ,  C30B23/00 ,  C30B25/00 ,  C30B25/02 ,  C30B28/12 ,  C30B28/14 ,  C30B29/52 ,  H01L21/20 ,  H01L21/205 ,  H01L21/36

CPC分类号： C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02661

摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

摘要翻译： 用于沉积诸如外延Ge和SiGe膜的外延膜的方法。 在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。 导致平滑，薄，相对缺陷的Ge或SiGe层。 还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

公开(公告)号：US20060234504A1

公开(公告)日：2006-10-19

申请号：US11343264

申请日：2006-01-30

申请人： Matthias Bauer ,  Chantal Arena ,  Ronald Bertram ,  Pierre Tomasini ,  Nyles Cody ,  Paul Brabant ,  Joseph Italiano ,  Paul Jacobson ,  Keith Weeks

发明人： Matthias Bauer ,  Chantal Arena ,  Ronald Bertram ,  Pierre Tomasini ,  Nyles Cody ,  Paul Brabant ,  Joseph Italiano ,  Paul Jacobson ,  Keith Weeks

IPC分类号： H01L21/44

CPC分类号： H01L29/7848 ,  C23C16/04 ,  C23C16/22 ,  C23C16/24 ,  C23C16/32 ,  C23C16/325 ,  C23C16/45512 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/32056 ,  H01L21/3215 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.

摘要翻译： 化学气相沉积方法使用丙硅烷和含卤素蚀刻剂源（例如氯）在混合基底的选定区域上选择性沉积含Si膜。 掺杂源可以与丙硅烷和蚀刻剂源混合以选择性沉积掺杂的含Si薄膜。 选择性沉积方法可用于各种应用，例如半导体制造。