公开(公告)号：US07648579B2

公开(公告)日：2010-01-19

申请号：US11057111

申请日：2005-02-11

Applicant: Matt G. Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory M. Bartlett ,  Joseph P. Italiano ,  Bob Haro

Inventor： Matt G. Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory M. Bartlett ,  Joseph P. Italiano ,  Bob Haro

IPC: C23C16/458 ,  C23C16/00 ,  H01L21/306

CPC classification number: H01L21/68735 ,  H01J37/32871 ,  H01L21/67028

Abstract: A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).

Abstract translation: 衬底支撑系统包括具有在其顶表面和底表面之间延伸的多个通道的衬底保持器。 衬底保持器支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。 中空的支撑构件为衬底的下侧提供支撑，并且构造成将气体向上输送到衬底保持器的一个或多个通道中。 向上输送的气体流入基板和基板支架之间的间隙。 根据实施例，气体然后围绕衬底边缘向外和向上流动（以阻止反应物气体在衬底上方的背面沉积）或向下穿过衬底保持器的通道（如果有的话），其不会引回到中空支撑件 （通过从扩散的掺杂​​剂原子远离衬底背面来抑制自掺杂）。

公开(公告)号：US06749687B1

公开(公告)日：2004-06-15

申请号：US09227679

申请日：1999-01-08

Applicant: Armand Ferro ,  Ivo Raaijmakers ,  Derrick Foster

Inventor： Armand Ferro ,  Ivo Raaijmakers ,  Derrick Foster

IPC: C30B2516

CPC classification number: C30B29/06 ,  C23C16/4405 ,  C23C16/481 ,  C30B25/02 ,  C30B25/105 ,  C30B25/14 ,  C30B33/005 ,  C30B33/02 ,  C30B33/12 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28017 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/31662 ,  H01L29/66651

Abstract: A single-wafer, chemical vapor deposition reactor is provided with hydrogen and silicon source gas suitable for epitaxial silicon deposition, as well as a safe mixture of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within the sane chamber. In particular, a sacrificial oxidation is performed, followed by a hydrogen bake to sublime the oxide and leave a clean substrate. Epitaxial deposition can follow in situ. A protective oxide can also be formed over the epitaxial layer within the same chamber, preventing contamination of the critical epitaxial layer. Alternatively, the oxide layer can serve as the gate dielectric, and a polysilicon gate layer can be formed in situ over the oxide.

Abstract translation: 单晶片化学气相沉积反应器具有适用于外延硅沉积的氢和硅源气体，以及非反应性气体中的氧的安全混合物。 提供了在正常室内形成氧化物层和硅层的方法。 特别地，进行牺牲氧化，然后进行氢气烘烤以使氧化物升华并留下清洁的基材。 外延沉积可以原位追踪。 也可以在同一室内的外延层上形成保护性氧化物，防止关键外延层的污染。 或者，氧化物层可以用作栅极电介质，并且可以在氧化物上原位形成多晶硅栅极层。

公开(公告)号：US08317921B2

公开(公告)日：2012-11-27

申请号：US11124329

申请日：2005-05-06

Applicant: Armand Ferro ,  Ivo Raaijmakers ,  Derrick Foster

Inventor： Armand Ferro ,  Ivo Raaijmakers ,  Derrick Foster

IPC: C23C16/52 ,  C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC classification number: C30B29/06 ,  C23C16/4405 ,  C23C16/481 ,  C30B25/02 ,  C30B25/105 ,  C30B25/14 ,  C30B33/005 ,  C30B33/02 ,  C30B33/12 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28017 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/31662 ,  H01L29/66651

Abstract: A single-wafer, chemical vapor deposition reactor is provided with hydrogen and silicon source gas suitable for epitaxial silicon deposition, as well as a safe mixture of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within the same chamber. In particular, a sacrificial oxidation is performed, followed by a hydrogen bake to sublime the oxide and leave a clean substrate. Epitaxial deposition can follow in situ. A protective oxide can also be formed over the epitaxial layer within the same chamber, preventing contamination of the critical epitaxial layer. Alternatively, the oxide layer can serve as the gate dielectric, and a polysilicon gate layer can be formed in situ over the oxide.

Abstract translation: 单晶片化学气相沉积反应器具有适用于外延硅沉积的氢和硅源气体，以及非反应性气体中的氧的安全混合物。 提供了在相同的室内形成氧化物层和硅层的方法。 特别地，进行牺牲氧化，然后进行氢气烘烤以使氧化物升华并留下清洁的基材。 外延沉积可以原位追踪。 也可以在同一室内的外延层上形成保护性氧化物，防止关键外延层的污染。 或者，氧化物层可以用作栅极电介质，并且可以在氧化物上原位形成多晶硅栅极层。

公开(公告)号：US20100089314A1

公开(公告)日：2010-04-15

申请号：US12641712

申请日：2009-12-18

Applicant: Matt G. Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory M. Bartlett ,  Joseph P. Italiano ,  Bob Haro

Inventor： Matt G. Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory M. Bartlett ,  Joseph P. Italiano ,  Bob Haro

IPC: B05C13/00

CPC classification number: H01L21/68735 ,  H01J37/32871 ,  H01L21/67028

Abstract: A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).

Abstract translation: 衬底支撑系统包括具有在其顶表面和底表面之间延伸的多个通道的衬底保持器。 衬底保持器支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。 中空的支撑构件为衬底的下侧提供支撑，并且构造成将气体向上输送到衬底保持器的一个或多个通道中。 向上输送的气体流入基板和基板支架之间的间隙。 根据实施例，气体然后围绕衬底边缘向外和向上流动（以阻止反应物气体在衬底上方的背面沉积）或向下穿过衬底保持器的通道（如果有的话），其不会引回到中空支撑件 （通过从扩散的掺杂​​剂原子远离衬底背面来抑制自掺杂）。

公开(公告)号：US08088225B2

公开(公告)日：2012-01-03

申请号：US12641712

申请日：2009-12-18

Applicant: Matt G. Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory M. Bartlett ,  Joseph P. Italiano ,  Bob Haro

Inventor： Matt G. Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory M. Bartlett ,  Joseph P. Italiano ,  Bob Haro

IPC: C23C16/458 ,  C23C16/00 ,  H01L21/306

CPC classification number: H01L21/68735 ,  H01J37/32871 ,  H01L21/67028

Abstract: A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).

Abstract translation: 衬底支撑系统包括具有在其顶表面和底表面之间延伸的多个通道的衬底保持器。 衬底保持器支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。 中空的支撑构件为衬底的下侧提供支撑，并且构造成将气体向上输送到衬底保持器的一个或多个通道中。 向上输送的气体流入基板和基板支架之间的间隙。 根据实施例，气体然后围绕衬底边缘向外和向上流动（以阻止反应物气体在衬底上方的背面沉积）或向下穿过衬底保持器的通道（如果有的话），其不会引回到中空支撑件 （通过从扩散的掺杂​​剂原子远离衬底背面来抑制自掺杂）。

公开(公告)号：US07105055B2

公开(公告)日：2006-09-12

申请号：US10841369

申请日：2004-05-06

Applicant: Armand Ferro ,  Ivo Raaijmakers ,  Derrick Foster

Inventor： Armand Ferro ,  Ivo Raaijmakers ,  Derrick Foster

IPC: C30B23/00

CPC classification number: C30B29/06 ,  C23C16/4405 ,  C23C16/481 ,  C30B25/02 ,  C30B25/105 ,  C30B25/14 ,  C30B33/005 ,  C30B33/02 ,  C30B33/12 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28017 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/31662 ,  H01L29/66651

Abstract: A single-wafer, chemical vapor deposition reactor is provided with hydrogen and silicon source gas suitable for epitaxial silicon deposition, as well as a safe mixture of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within the same chamber. In particular, a sacrificial oxidation is performed, followed by a hydrogen bake to sublime the oxide and leave a clean substrate. Epitaxial deposition can follow in situ. A protective oxide can also be formed over the epitaxial layer within the same chamber, preventing contamination of the critical epitaxial layer. Alternatively, the oxide layer can serve as the gate dielectric, and a polysilicon gate layer can be formed in situ over the oxide.

公开(公告)号：US20050205010A1

公开(公告)日：2005-09-22

申请号：US11124329

申请日：2005-05-06

Applicant: Armand Ferro ,  Ivo Raaijmakers ,  Derrick Foster

Inventor： Armand Ferro ,  Ivo Raaijmakers ,  Derrick Foster

IPC: C23C16/00 ,  C23C16/44 ,  C23C16/48 ,  C30B25/02 ,  C30B25/14 ,  C30B29/06 ,  H01L21/205 ,  H01L21/28 ,  H01L21/311 ,  H01L21/316 ,  H01L21/336

CPC classification number: C30B29/06 ,  C23C16/4405 ,  C23C16/481 ,  C30B25/02 ,  C30B25/105 ,  C30B25/14 ,  C30B33/005 ,  C30B33/02 ,  C30B33/12 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28017 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/31662 ,  H01L29/66651

Abstract: A single-wafer, chemical vapor deposition reactor is provided with hydrogen and silicon source gas suitable for epitaxial silicon deposition, as well as a safe mixture of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within the same chamber. In particular, a sacrificial oxidation is performed, followed by a hydrogen bake to sublime the oxide and leave a clean substrate. Epitaxial deposition can follow in situ. A protective oxide can also be formed over the epitaxial layer within the same chamber, preventing contamination of the critical epitaxial layer. Alternatively, the oxide layer can serve as the gate dielectric, and a polysilicon gate layer can be formed in situ over the oxide.

Abstract translation: 单晶片化学气相沉积反应器具有适用于外延硅沉积的氢和硅源气体，以及非反应性气体中的氧的安全混合物。 提供了在相同的室内形成氧化物层和硅层的方法。 特别地，进行牺牲氧化，然后进行氢气烘烤以使氧化物升华并留下清洁的基材。 外延沉积可以原位追踪。 也可以在同一室内的外延层上形成保护性氧化物，防止关键外延层的污染。 或者，氧化物层可以用作栅极电介质，并且可以在氧化物上原位形成多晶硅栅极层。

公开(公告)号：US07112538B2

公开(公告)日：2006-09-26

申请号：US10293795

申请日：2002-11-12

Applicant: Armand Ferro ,  Ivo Raaijmakers ,  Derrick Foster

Inventor： Armand Ferro ,  Ivo Raaijmakers ,  Derrick Foster

IPC: H01L21/31

CPC classification number: C30B29/06 ,  C23C16/4405 ,  C23C16/481 ,  C30B25/02 ,  C30B25/105 ,  C30B25/14 ,  C30B33/005 ,  C30B33/02 ,  C30B33/12 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28017 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/31662 ,  H01L29/66651

Abstract: A single-wafer, chemical vapor deposition reactor is provided with hydrogen and silicon source gas suitable for epitaxial silicon deposition, as well as a safe mixture of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within the same chamber. In particular, a sacrificial oxidation is performed, followed by a hydrogen bake to sublime the oxide and leave a clean substrate. Epitaxial deposition can follow in situ. A protective oxide can also be formed over the epitaxial layer within the same chamber, preventing contamination of the critical epitaxial layer. Alternatively, the oxide layer can serve as the gate dielectric, and a polysilicon gate layer can be formed in situ over the oxide.

公开(公告)号：US20050193952A1

公开(公告)日：2005-09-08

申请号：US11057111

申请日：2005-02-11

Applicant: Matt Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory Bartlett ,  Joseph Italiano ,  Bob Haro

Inventor： Matt Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory Bartlett ,  Joseph Italiano ,  Bob Haro

IPC: C23C16/00 ,  C23C16/458 ,  C30B25/12 ,  C30B25/14 ,  H01L21/00 ,  H01L21/687

CPC classification number: H01L21/68735 ,  H01J37/32871 ,  H01L21/67028

Abstract: A substrate support system comprises a relatively thin circular substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder includes a single substrate support ledge or a plurality of substrate support spacer vanes configured to support a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. The vanes can be angled to resist backside deposition of reactant gases as the substrate holder is rotated. A hollow support member provides support to an underside of the substrate holder. The hollow support member is configured to convey gas (e.g., inert gas or cleaning gas) upward into one or more of the passages of the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment of the invention, the gas in the gap can then flow either (1) outward and upward around the substrate edge or (2) downward through passages of the substrate holder, if any, that do not lead back into the hollow support member. The gas that flows outward and upward around the substrate edge inhibits backside deposition of reactant gases above the substrate. The gas that flows downward through the passages that do not lead back to the support member advantageously inhibits autodoping by sweeping out-diffused dopant atoms away from the substrate front side. In one embodiment, the support member comprises a hollow multi-armed support spider that conveys gas into selected ones of the passages. In another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all of the passages. In yet another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all but one or more of the passages.

Abstract translation: 衬底支撑系统包括相对薄的圆形衬底保持器，其具有在其顶表面和底表面之间延伸的多个通道。 衬底保持器包括单个衬底支撑凸缘或多个衬底支撑间隔器叶片，其构造成支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。 当基板保持器旋转时，叶片可以成角度以抵抗反应气体的背面沉积。 中空的支撑构件为衬底保持器的下侧提供支撑。 中空支撑构件被构造成将气体（例如，惰性气体或清洁气体）向上输送到衬底保持器的一个或多个通道中。 向上输送的气体流入基板和基板支架之间的间隙。 根据本发明的实施例，间隙中的气体然后可以（1）围绕衬底边缘向外和向上流动，或者（2）向下通过衬底保持器的通道（如果有的话），其不会引导回到空心 支持会员 在衬底边缘周围向外和向上流动的气体阻止在衬底上方的反应物气体的背面沉积。 通过通道向下流动的气体不会返回到支撑构件，有利地通过从扩散的掺杂​​剂原子远离衬底正面来扫除自发掺杂。 在一个实施例中，支撑构件包括将气体输送到选定的通道中的中空多臂支撑蜘蛛。 在另一个实施例中，支撑构件包括将气体向上输送到所有通道中的碗形或杯状结构。 在另一个实施例中，支撑构件包括碗形或杯状结构，其将气体向上输送到除了一个或多个通道中的所有通道中。

公开(公告)号：US06242718B1

公开(公告)日：2001-06-05

申请号：US09434030

申请日：1999-11-04

Applicant: Armand Ferro ,  Ivo Raaijmakers ,  Ravinder Aggarwal ,  Ronald R. Stevens

Inventor： Armand Ferro ,  Ivo Raaijmakers ,  Ravinder Aggarwal ,  Ronald R. Stevens

IPC: A21B100

CPC classification number: H01L21/6835 ,  H01L21/6838 ,  H01L2221/68359 ,  Y10S414/135

Abstract: A Bernoulli wand type semiconductor wafer pickup device that is adapted to regulate the temperature of a wafer while the wafer is being repositioned within a semiconductor processing system. In one embodiment, the device is comprised of a resistive heating element that is adapted to raise the temperature of the pickup device. In particular, by raising the temperature of the pickup device, a portion of the thermal radiation emitted from the device is absorbed by the wafer, thus providing a means for regulating the wafer temperature. In another embodiment, the device is adapted with the characteristics of a black body absorber so as to enable the device to optimally absorb thermal radiation from external radiant sources, thereby providing a means for increasing the temperature of the device. In another embodiment, the device is coated with reflective material that enables a large portion of thermal radiation emitted from the wafer to be reflected and absorbed back into the wafer. In another embodiment, the preexisting gas system of the pickup device is adapted with a gas beating device that is adapted to raise the temperature of the gas so as to regulate the temperature of the wafer.

Abstract translation: 一种伯努利棒状半导体晶片拾取装置，其适于在晶片在半导体处理系统内重新定位时调节晶片的温度。 在一个实施例中，该装置包括适于提升拾取装置的温度的电阻加热元件。 特别地，通过提高拾取装置的温度，从装置发射的热辐射的一部分被晶片吸收，从而提供调节晶片温度的装置。 在另一个实施例中，该装置适于具有黑体吸收体的特征，以便能够使装置最佳地吸收来自外部辐射源的热辐射，由此提供用于增加装置温度的装置。 在另一个实施例中，该装置涂覆有反射材料，其使得能够将从晶片发射的大部分热辐射反射并吸收回到晶片中。 在另一个实施例中，拾取装置的预先存在的气体系统适用于气体打浆装置，该气体打浆装置适于升高气体的温度以调节晶片的温度。