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1.发明授权Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication 失效具有金属氧化物相的紫外线透射氧化物及其制造方法
公开(公告)号：US6094295A
公开(公告)日：2000-07-25
申请号：US022703
申请日：1998-02-12
IPC分类号： C23C14/08 , H01L21/316 , H01L31/0224 , H01L31/18 , G02F1/00 , B05D3/06 , H01L21/31 , H01L29/94
CPC分类号： C23C14/08 , H01L21/31604 , H01L31/022466 , H01L31/1884 , Y02E10/50
摘要： An electro-conductive ultraviolet light transmitting Ga.sub.2 O.sub.3 material (10) with a metallic oxide phase is deposited on a GaAs substrate or supporting structure (12). The Ga.sub.2 O.sub.3 material or thin layer comprises a minor component of metallic IrO.sub.2. The Ga.sub.2 O.sub.3 thin layer may be positioned using thermal evaporation (106) of Ga.sub.2 O.sub.3 or of a Ga.sub.2 O.sub.3 containing a compound from an Iridium crucible (108). Alternatively, the Ir may be co-evaporated (110) by electron beam evaporation. The electro-conductive ultraviolet light transmitting material Ga.sub.2 O.sub.3 with a metallic oxide phase is suitable for use on solar cells and in laser lithography.
摘要翻译： 在GaAs衬底或支撑结构（12）上沉积具有金属氧化物相的透射Ga 2 O 3材料（10）的导电紫外光。 Ga 2 O 3材料或薄层包含金属IrO 2的次要组分。 可以使用Ga 2 O 3的热蒸发（106）或含有来自铱坩埚（108）的化合物的Ga 2 O 3来定位Ga 2 O 3薄层。 或者，Ir可以通过电子束蒸发共蒸发（110）。 具有金属氧化物相的导电紫外线透射材料Ga 2 O 3适用于太阳能电池和激光光刻。
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公开(公告)号：US06359294B1
公开(公告)日：2002-03-19
申请号：US08812952
申请日：1997-03-04
IPC分类号： H01L2976
CPC分类号： H01L29/517 , H01L21/28158 , H01L21/28264 , H01L29/66462 , H01L29/802
摘要： An insulator-compound semiconductor interface structure is disclosed including compound semiconductor material with a spacer layer of semiconductor material having a bandgap which is wider than the bandgap of the compound semiconductor material positioned on a surface of the compound semiconductor material and an insulating layer positioned on the spacer layer. Minimum and maximum thicknesses of the spacer layer are determined by the penetration of the carrier wave function into the spacer layer and by the desired device performance. In a specific embodiment, the interface structure is formed in a multi-wafer epitaxial production system including a transfer and load module with a III-V growth chamber attached and an insulator chamber attached.
摘要翻译： 公开了一种绝缘体 - 化合物半导体界面结构，其包括具有半导体材料的隔离层的化合物半导体材料，该间隔层具有比位于化合物半导体材料的表面上的化合物半导体材料的带隙宽的带隙和位于化合物半导体材料的表面上的绝缘层 间隔层。 间隔层的最小和最大厚度由载波函数穿入间隔层和所需器件性能决定。 在具体实施例中，界面结构形成在多晶片外延生产系统中，该系统包括连接有III-V生长室的传输和负载模块，并连接有绝缘体室。
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公开(公告)号：US5907792A
公开(公告)日：1999-05-25
申请号：US917122
申请日：1997-08-25
IPC分类号： C23C14/06 , H01L21/318 , H01L29/78
CPC分类号： C23C14/0652 , H01L21/3185 , Y10S148/169 , Y10S438/961
摘要： A method of forming a silicon nitride layer or film on a semiconductor wafer structure includes forming a silicon nitride layer on the surface of a wafer structure using a molecular beam of high purity elemental Si and an atomic beam of high purity nitrogen. In a preferred embodiment, a III-V compound semiconductor wafer structure is heated in an ultra high vacuum system to a temperature below the decomposition temperature of said compound semiconductor wafer structure and a silicon nitride layer is formed using a molecular beam of Si provided by either thermal evaporation or electron beam evaporation, and an atomic nitrogen beam provided by either RF or microwave plasma discharge.
摘要翻译： 在半导体晶片结构上形成氮化硅层或膜的方法包括使用高纯度元素Si的分子束和高纯氮原子束在晶片结构的表面上形成氮化硅层。 在优选实施例中，III-V族化合物半导体晶片结构在超高真空系统中被加热至低于所述化合物半导体晶片结构的分解温度的温度，并且使用由以下两者之一提供的Si的分子束形成氮化硅层 热蒸发或电子束蒸发，以及由RF或微波等离子体放电提供的原子氮光束。
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公开(公告)号：US5902130A
公开(公告)日：1999-05-11
申请号：US896234
申请日：1997-07-17
IPC分类号： H01L21/265 , H01L21/336 , H01L29/51 , H01L21/28
CPC分类号： H01L21/26553 , H01L29/66522 , H01L29/517 , H01L29/518
摘要： A method of thermal processing a supporting structure comprised of various compound semiconductor layers having a Gd free Ga.sub.2 O.sub.3 surface layer including coating the surface layer with a dielectric or a metallic cap layer or combinations thereof, such that the low D.sub.it Ga.sub.2 O.sub.3 -compound semiconductor structure is conserved during thermal processing, e.g. during activation of ion implants of a self aligned metal-oxide-compound semiconductor gate structure. In a preferred embodiment, the semiconductor structure has a surface of GaAs, the Gd free Ga.sub.2 O.sub.3 layer has a thickness in a range of approximately 1 nm to 20 nm, and the insulating or metallic cap layer has a thickness in a range of approximately 1 nm to 500 nm.
摘要翻译： 一种热处理由具有Gd游离Ga 2 O 3表面层的各种化合物半导体层构成的支撑结构的方法，包括用电介质或金属覆盖层或其组合涂覆表面层，使得低Dit Ga 2 O 3化合物半导体结构被保守 在热处理过程中，例如 在自对准的金属氧化物 - 化合物半导体栅极结构的离子注入的激活期间。 在优选实施例中，半导体结构具有GaAs的表面，Gd自由的Ga 2 O 3层的厚度在约1nm至20nm的范围内，并且绝缘或金属覆盖层的厚度在约1nm的范围内 至500nm。
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公开(公告)号：US6110840A
公开(公告)日：2000-08-29
申请号：US24148
申请日：1998-02-17
IPC分类号： C23C14/02 , C23C14/16 , H01L21/285 , H01L21/306 , H01L21/31
CPC分类号： B82Y30/00 , C23C14/021 , C23C14/16 , H01L21/28518 , H01L21/02043
摘要： A method of passivating the surface of a Si wafer is disclosed including the steps of cleaning the surface of the Si wafer and depositing an alkaline earth metal on the clean surface at a wafer temperature in a range of approximately 400.degree. C. to 750.degree. C. The surface is monitored during deposition to detect a (4.times.2) surface reconstruction pattern indicating approximately a one-quarter monolayer of alkaline earth metal is formed. The wafer is annealed at a temperature in a range of 800.degree. C. to 900.degree. C. until the alkaline earth metal forms an alkaline earth metal silicide with a (2.times.1) surface pattern on the surface.
摘要翻译： 公开了一种钝化Si晶片的表面的方法，包括以下步骤：在大约400℃至750℃的晶圆温度下清洁Si晶片的表面并在清洁表面上沉积碱土金属 在沉积期间监测表面以检测（4×2）表面重建图案，其指示形成大约四分之一的碱土金属单层。 将晶片在800℃至900℃的温度下进行退火，直到碱土金属在表面上形成具有（2x1）表面图案的碱土金属硅化物。
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6.发明授权Method of preparing crystalline alkaline earth metal oxides on a Si substrate 失效在Si衬底上制备结晶碱土金属氧化物的方法
公开(公告)号：US6113690A
公开(公告)日：2000-09-05
申请号：US93081
申请日：1998-06-08
摘要： A method of preparing crystalline alkaline earth metal oxides on a Si substrate wherein a Si substrate with amorphous silicon dioxide on a surface is provided. The substrate is heated to a temperature in a range of 700.degree. C. to 800.degree. C. and exposed to a beam of alkaline earth metal(s) in a molecular beam epitaxy chamber at a pressure within approximately a 10.sup.-9 -10.sup.-10 Torr range. During the molecular beam epitaxy the surface is monitored by RHEED technique to determine a conversion of the amorphous silicon dioxide to a crystalline alkaline earth metal oxide. Once the alkaline earth metal oxide is formed, additional layers of material, e.g. additional thickness of an alkaline earth metal oxide, single crystal ferroelectrics or high dielectric constant oxides on silicon for non-volatile and high density memory device applications.
摘要翻译： 在Si衬底上制备结晶碱土金属氧化物的方法，其中提供了表面上具有无定形二氧化硅的Si衬底。 将基底加热至700℃至800℃的温度，并在分子束外延室内以大约10-9-10℃的压力暴露于一束或多束碱土金属， 10乇范围。 在分子束外延期间，通过RHEED技术监测表面以确定无定形二氧化硅向结晶碱土金属氧化物的转化。 一旦形成碱土金属氧化物，可以使用另外的材料层。 用于非易失性和高密度存储器件应用的碱土金属氧化物，单晶铁电体或硅上的高介电常数氧化物的附加厚度。
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