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公开(公告)号：US6110840A
公开(公告)日：2000-08-29
申请号：US24148
申请日：1998-02-17
IPC分类号： C23C14/02 , C23C14/16 , H01L21/285 , H01L21/306 , H01L21/31
CPC分类号： B82Y30/00 , C23C14/021 , C23C14/16 , H01L21/28518 , H01L21/02043
摘要： A method of passivating the surface of a Si wafer is disclosed including the steps of cleaning the surface of the Si wafer and depositing an alkaline earth metal on the clean surface at a wafer temperature in a range of approximately 400.degree. C. to 750.degree. C. The surface is monitored during deposition to detect a (4.times.2) surface reconstruction pattern indicating approximately a one-quarter monolayer of alkaline earth metal is formed. The wafer is annealed at a temperature in a range of 800.degree. C. to 900.degree. C. until the alkaline earth metal forms an alkaline earth metal silicide with a (2.times.1) surface pattern on the surface.
摘要翻译： 公开了一种钝化Si晶片的表面的方法，包括以下步骤：在大约400℃至750℃的晶圆温度下清洁Si晶片的表面并在清洁表面上沉积碱土金属 在沉积期间监测表面以检测（4×2）表面重建图案，其指示形成大约四分之一的碱土金属单层。 将晶片在800℃至900℃的温度下进行退火，直到碱土金属在表面上形成具有（2x1）表面图案的碱土金属硅化物。
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2.发明授权Method of preparing crystalline alkaline earth metal oxides on a Si substrate 失效在Si衬底上制备结晶碱土金属氧化物的方法
公开(公告)号：US6113690A
公开(公告)日：2000-09-05
申请号：US93081
申请日：1998-06-08
摘要： A method of preparing crystalline alkaline earth metal oxides on a Si substrate wherein a Si substrate with amorphous silicon dioxide on a surface is provided. The substrate is heated to a temperature in a range of 700.degree. C. to 800.degree. C. and exposed to a beam of alkaline earth metal(s) in a molecular beam epitaxy chamber at a pressure within approximately a 10.sup.-9 -10.sup.-10 Torr range. During the molecular beam epitaxy the surface is monitored by RHEED technique to determine a conversion of the amorphous silicon dioxide to a crystalline alkaline earth metal oxide. Once the alkaline earth metal oxide is formed, additional layers of material, e.g. additional thickness of an alkaline earth metal oxide, single crystal ferroelectrics or high dielectric constant oxides on silicon for non-volatile and high density memory device applications.
摘要翻译： 在Si衬底上制备结晶碱土金属氧化物的方法，其中提供了表面上具有无定形二氧化硅的Si衬底。 将基底加热至700℃至800℃的温度，并在分子束外延室内以大约10-9-10℃的压力暴露于一束或多束碱土金属， 10乇范围。 在分子束外延期间，通过RHEED技术监测表面以确定无定形二氧化硅向结晶碱土金属氧化物的转化。 一旦形成碱土金属氧化物，可以使用另外的材料层。 用于非易失性和高密度存储器件应用的碱土金属氧化物，单晶铁电体或硅上的高介电常数氧化物的附加厚度。
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公开(公告)号：US06022410A
公开(公告)日：2000-02-08
申请号：US144921
申请日：1998-09-01
申请人： Zhiyi Yu , Jun Wang , Ravindranath Droopad , Daniel S. Marshall , Jerald A. Hallmark , Jonathan K. Abrokwah
发明人： Zhiyi Yu , Jun Wang , Ravindranath Droopad , Daniel S. Marshall , Jerald A. Hallmark , Jonathan K. Abrokwah
IPC分类号： H01L21/203 , C30B23/02 , C30B29/10 , C30B23/00
摘要： A method of forming a thin silicide layer on a silicon substrate 12 including heating the surface of the substrate to a temperature of approximately 500.degree. C. to 750.degree. C. and directing an atomic beam of silicon 18 and an atomic beam of an alkaline-earth metal 20 at the heated surface of the substrate in a molecular beam epitaxy chamber at a pressure in a range below 10.sup.-9 Torr. The silicon to alkaline-earth metal flux ratio is kept constant (e.g. Si/Ba flux ratio is kept at approximately 2:1) so as to form a thin alkaline-earth metal silicide layer (e.g. BaSi.sub.2) on the surface of the substrate. The thickness is determined by monitoring in situ the surface of the single crystal silicide layer with RHEED and terminating the atomic beam when the silicide layer is a selected submonolayer to one monolayer thick.
摘要翻译： 一种在硅衬底12上形成薄硅化物层的方法，包括将衬底的表面加热至约500℃至750℃的温度，并引导硅18的原子束和碱性电子束的原子束， 在分子束外延室中的衬底的加热表面处的压力在10-9乇以下的地球金属20。 将硅与碱土金属的通量比保持恒定（例如，Si / Ba通量比保持在约2:1），以在衬底的表面上形成薄的碱土金属硅化物层（例如BaSi 2）。 通过用RHEED原位监测单晶硅化物层的表面并且当硅化物层是选择的亚单层至一个单层厚度时终止原子束来确定厚度。
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4.发明授权Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making 失效异质结构场效应器件直接在通道层上具有难熔欧姆接触和制造方法
公开(公告)号：US5606184A
公开(公告)日：1997-02-25
申请号：US434867
申请日：1995-05-04
申请人： Jonathan K. Abrokwah , Jenn-Hwa Huang , William J. Ooms , Carl L. Shurboff , Jerald A. Hallmark
发明人： Jonathan K. Abrokwah , Jenn-Hwa Huang , William J. Ooms , Carl L. Shurboff , Jerald A. Hallmark
IPC分类号： H01L29/43 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/335 , H01L21/338 , H01L23/52 , H01L27/085 , H01L29/08 , H01L29/417 , H01L29/45 , H01L29/778 , H01L29/812 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/66462 , H01L21/28575 , H01L27/085 , H01L29/0891 , H01L29/41766 , H01L29/452
摘要： A complementary III-V heterostructure field effect device includes the same refractory ohmic material for providing the contacts (117, 119), to both the N-type and P-type devices. Furthermore, the refractory ohmic contacts (117, 119) directly contact the InGaAs channel layer (16) to provide improved ohmic contact, despite the fact that the structure incorporates an advantageous high aluminum composition barrier layer (18) and an advantageous GaAs cap layer (20).
摘要翻译： 互补的III-V异质结构场效应器件包括用于向N型和P型器件提供触点（117,119）的相同难熔欧姆材料。 此外，难熔欧姆接触（117,119）直接接触InGaAs沟道层（16）以提供改善的欧姆接触，尽管该结构包含有利的高铝成分阻挡层（18）和有利的GaAs覆盖层（ 20）。
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公开(公告)号：US07342276B2
公开(公告)日：2008-03-11
申请号：US10861467
申请日：2004-06-07
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/19 , H01L31/113
CPC分类号： H01L28/55 , H01L21/28194 , H01L21/28202 , H01L21/31691 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/94
摘要： A semiconductor device, including: a semiconductor material; a conductive element; and a substantially monocrystalline insulator disposed between the semiconductor material and the conductive element and substantially lattice matched to the semiconductor material.
摘要翻译： 一种半导体器件，包括：半导体材料; 导电元件; 以及设置在半导体材料和导电元件之间并基本上与半导体材料晶格匹配的基本单晶绝缘体。
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6.发明授权Thermoelectric power generator and method of generating thermoelectric power in a steam power cycle utilizing latent steam heat 失效热电发电机及利用潜热蒸汽在蒸汽动力循环中产生热电功率的方法公开(公告)号：US06367261B1
公开(公告)日：2002-04-09
申请号：US09703072
申请日：2000-10-30
IPC分类号： F01K1700
摘要： A thermoelectric power generator and method of generating thermoelectric power in a steam power cycle utilizing latent steam heat including a condenser, a heat source, such as steam, and at least one thermoelectric module. The condenser includes a plurality of condenser tubes each having included therein a heat extractor. The heat source is in communication with the condenser and is characterized as providing thermal energy to the condenser. The at least one thermoelectric module, including a plurality of thermoelectric elements, is positioned in communication with at least one of the plurality of condenser tubes so that thermal energy flows through the thermoelectric elements thereby generating electrical power.
摘要翻译： 一种热电发电机和利用包括冷凝器，热源（例如蒸汽）和至少一个热电模块的潜热蒸汽热在蒸汽动力循环中产生热电功率的方法。 冷凝器包括多个冷凝管，每个冷凝管每个都包括一个散热器。 热源与冷凝器连通，其特征在于向冷凝器提供热能。 包括多个热电元件的至少一个热电模块被定位成与多个冷凝器管中的至少一个连通，使得热能流过热电元件从而产生电力。
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7.发明授权Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon 有权制造具有与硅结晶的碱土金属氧化物界面的半导体结构的方法公开(公告)号：US06224669B1
公开(公告)日：2001-05-01
申请号：US09662390
申请日：2000-09-14
申请人： Zhiyi Yi , Ravindranath Droopad , Corey Daniel Overgaard , Jamal Ramdani , Jay A. Curless , Jerald A. Hallmark , William J. Ooms , Jun Wang
发明人： Zhiyi Yi , Ravindranath Droopad , Corey Daniel Overgaard , Jamal Ramdani , Jay A. Curless , Jerald A. Hallmark , William J. Ooms , Jun Wang
IPC分类号： C03B2514
CPC分类号： H01L21/31691 , C30B23/02 , C30B25/02 , C30B29/16 , H01L21/31604 , H01L28/56
摘要： A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.
摘要翻译： 一种制造半导体结构的方法包括以下步骤：提供具有表面（12）的硅衬底（10）; 在所述硅衬底的表面上形成包含硅，氧和金属的单原子层的界面（14）; 以及在界面上形成一层或多层单晶氧化物（26）。 该界面包括硅，氧和XSiO 2形式的金属的原子层，其中X是金属。
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8.发明授权
公开(公告)号：US6097047A
公开(公告)日：2000-08-01
申请号：US70063
申请日：1998-04-30
IPC分类号： H01L21/336 , H01L21/8234 , H01L29/10 , H01L29/78 , H01L29/786
CPC分类号： H01L29/66772 , H01L21/8234 , H01L29/1079 , H01L29/78391 , H01L29/78603 , H01L29/78645
摘要： A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) is manufactured from a substrate (11) that has a layer (14) of ferroelectric material sandwiched between a substrate (13) and a layer (16) of silicon. A gate structure (24) is formed on the layer (16) of silicon. A source region is formed in a portion of the layer (16) of silicon adjacent one side of the gate structure (24) and a drain region is formed in a portion of the layer (16) of silicon adjacent an opposing side of the gate structure (24).
摘要翻译： 铁电半导体器件（10）和制造铁电半导体器件（10）的方法。 铁电半导体装置（10）由具有夹在基板（13）和硅层（16）之间的铁电材料层（14）的基板（11）制成。 在硅的层（16）上形成栅极结构（24）。 源极区域形成在与栅极结构（24）的一侧相邻的硅的层（16）的一部分中，并且漏极区域形成在邻近栅极的相对侧的硅层（16）的一部分中 结构（24）。
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9.发明授权
公开(公告)号：US5898317A
公开(公告)日：1999-04-27
申请号：US772736
申请日：1996-12-23
IPC分类号： H03K19/177 , G06F7/38
CPC分类号： H03K19/17772 , H03K19/1776 , H03K19/1778
摘要： A ferroelectric memory array (20) monolithically integrated with a field programmable gate array (32) into a semiconductor circuit (10). The ferroelectric memory array (20) is suitable for a semiconductor manufacturer to program the configuration data that is used in the field programmable gate array (32) prior to shipment and installation in an electronic system. The memory array (20) provides the data that configures the field programmable gate array (32) for functionality of the Configurable Logic Blocks (CLBs) in the field programmable gate array (32). Should the field programmable gate array (32) circuit lose power, the non-volatile memory array (20) provides a shift register (26) with the data to reconfigure the field programmable gate array (32).
摘要翻译： 与现场可编程门阵列（32）单片集成到半导体电路（10）中的铁电存储器阵列（20）。 铁电存储器阵列（20）适用于半导体制造商，以在电子系统中装运和安装之前编程在现场可编程门阵列（32）中使用的配置数据。 存储器阵列（20）为现场可编程门阵列（32）中的可配置逻辑块（CLB）的功能提供配置现场可编程门阵列（32）的数据。 如果现场可编程门阵列（32）电路失去功率，则非易失性存储器阵列（20）为移位寄存器（26）提供数据以重新配置现场可编程门阵列（32）。
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10.发明授权Electrochemical battery pack with reduced magnetic field emission and corresponding devices 有权具有减少磁场发射的电化学电池组和相应的器件公开(公告)号：US08642205B2
公开(公告)日：2014-02-04
申请号：US12853055
申请日：2010-08-09
申请人： Hossein Maleki , Jerald A. Hallmark
发明人： Hossein Maleki , Jerald A. Hallmark
摘要： A battery pack with reduced magnetic field emissions includes a plurality of cells (1301,1302) coupled electrically together by a first electrical conductor (1307) and a second electrical conductor (1308). The first electrical conductor (1307) couples positive terminals (1305,1306) to a terminal block (1311), while the second electrical conductor (1308) couples the negative terminals (1303,1304) to the terminal block (1311). Each cell (1301,1302) contains an asymmetrical internal electrode construction (1313,1314) having electrical tabs (502,503) coupled to a cathode and anode. The cells (1301,1302) can be arranged with their corresponding asymmetrical internal electrode constructions (1313,1314) oriented in different directions to reduce magnetic field emissions. The first electrical conductor (1307) and second electrical conductor (1308) can be routed such that magnetic fields generated by discharge currents tend to reduce other magnetic fields produced by other components within the battery pack.
摘要翻译： 具有减小的磁场发射的电池组包括通过第一电导体（1307）和第二电导体（1308）电连接的多个电池单元（1301,1302）。 第一电导体（1307）将正端子（1305,1306）耦合到端子块（1311），而第二电导体（1308）将负端子（1303,1304）耦合到端子块（1311）。 每个单元（1301,1302）包含具有耦合到阴极和阳极的电接头（502,503）的不对称内部电极结构（1313,1314）。 电池（1301,1302）可以布置成其对应的不对称内部电极结构（1313,1314）定向在不同的方向以减小磁场发射。 可以布置第一电导体（1307）和第二电导体（1308），使得由放电电流产生的磁场倾向于减少由电池组内的其它部件产生的其它磁场。
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