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公开(公告)号:US20170222068A1
公开(公告)日:2017-08-03
申请号:US15485840
申请日:2017-04-12
申请人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
发明人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
IPC分类号: H01L31/0224 , H01L31/0475 , H01L31/028 , H01L31/05
CPC分类号: H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要: Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
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公开(公告)号:US20160380132A1
公开(公告)日:2016-12-29
申请号:US14750821
申请日:2015-06-25
申请人: Richard Hamilton Sewell , David Fredric Joel Kavulak , Lewis Abra , Thomas P. Pass , Taeseok Kim , Matthieu Moors , Benjamin Ian Hsia , Gabriel Harley
发明人: Richard Hamilton Sewell , David Fredric Joel Kavulak , Lewis Abra , Thomas P. Pass , Taeseok Kim , Matthieu Moors , Benjamin Ian Hsia , Gabriel Harley
IPC分类号: H01L31/0224 , H01L31/0368 , H01L31/05 , H01L31/0687
摘要: Approaches for fabricating one-dimensional metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate and parallel along a first direction to form a one-dimensional layout of emitter regions for the solar cell. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal lines corresponding to the plurality of alternating N-type and P-type semiconductor regions. The plurality of metal lines is parallel along the first direction to form a one-dimensional layout of a metallization layer for the solar cell.
摘要翻译: 描述了制造用于太阳能电池的一维金属化的方法以及所得到的太阳能电池。 在一个示例中,太阳能电池包括具有背面和相对的光接收表面的基板。 多个交替的N型和P型半导体区域设置在基板的背面中或上方并且沿着第一方向平行,以形成用于太阳能电池的发射极区域的一维布局。 导电接触结构设置在多个交替的N型和P型半导体区域上。 导电接触结构包括对应于多个交替的N型和P型半导体区的多个金属线。 多个金属线沿着第一方向平行以形成用于太阳能电池的金属化层的一维布局。
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公开(公告)号:US20160027953A1
公开(公告)日:2016-01-28
申请号:US14874254
申请日:2015-10-02
申请人: Matthieu Moors , Taeseok Kim
发明人: Matthieu Moors , Taeseok Kim
IPC分类号: H01L31/18 , H01L31/0224
CPC分类号: H01L31/022433 , H01L31/022441 , H01L31/0682 , H01L31/18 , H01L31/186 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要: A method for fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a first metal layer on the dielectric region. The method can also include forming a second metal layer on the first metal layer and locally heating a particular region of the second metal layer, where heating includes forming a metal bond between the first and second metal layer and forming a contact between the first metal layer and the solar cell structure. The method can include forming an adhesive layer on the first metal layer and forming a second metal layer on the adhesive layer, where the adhesive layer mechanically couples the second metal layer to the first metal layer and allows for an electrical connection between the second metal layer to the first metal layer.
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公开(公告)号:US20170236966A1
公开(公告)日:2017-08-17
申请号:US15499732
申请日:2017-04-27
申请人: Matthieu Moors , David D. Smith , Gabriel Harley , Taeseok Kim
发明人: Matthieu Moors , David D. Smith , Gabriel Harley , Taeseok Kim
IPC分类号: H01L31/061 , H01L31/18
CPC分类号: H01L31/061 , H01L31/02167 , H01L31/022425 , H01L31/068 , H01L31/1864 , Y02E10/547
摘要: A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.
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公开(公告)号:US20170162730A1
公开(公告)日:2017-06-08
申请号:US15436282
申请日:2017-02-17
申请人: Matthieu Moors , Taeseok Kim
发明人: Matthieu Moors , Taeseok Kim
IPC分类号: H01L31/0224 , H01L31/18
CPC分类号: H01L31/022433 , H01L31/022441 , H01L31/0682 , H01L31/18 , H01L31/186 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要: A method for fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a first metal layer on the dielectric region. The method can also include forming a second metal layer on the first metal layer and locally heating a particular region of the second metal layer, where heating includes forming a metal bond between the first and second metal layer and forming a contact between the first metal layer and the solar cell structure. The method can include forming an adhesive layer on the first metal layer and forming a second metal layer on the adhesive layer, where the adhesive layer mechanically couples the second metal layer to the first metal layer and allows for an electrical connection between the second metal layer to the first metal layer.
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公开(公告)号:US09653638B2
公开(公告)日:2017-05-16
申请号:US14137970
申请日:2013-12-20
申请人: Matthieu Moors , David D. Smith , Gabriel Harley , Taeseok Kim
发明人: Matthieu Moors , David D. Smith , Gabriel Harley , Taeseok Kim
IPC分类号: H01L31/0216 , H01L31/0224 , H01L31/068
CPC分类号: H01L31/061 , H01L31/02167 , H01L31/022425 , H01L31/068 , H01L31/1864 , Y02E10/547
摘要: A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.
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公开(公告)号:US09231129B2
公开(公告)日:2016-01-05
申请号:US14229716
申请日:2014-03-28
申请人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
发明人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
IPC分类号: H01L21/00 , H01L31/0224 , H01L31/0687 , H01L31/02
CPC分类号: H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要: Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
摘要翻译: 描述了用于太阳能电池和所得太阳能电池的箔基金属化的方法。 在一个示例中,太阳能电池包括基板。 多个交替的N型和P型半导体区域设置在衬底中或上方。 导电接触结构设置在多个交替的N型和P型半导体区域的上方。 导电接触结构包括多个金属种子材料区域,其提供设置在每个交替的N型和P型半导体区域上的金属种子材料区域。 金属箔设置在多个金属种子材料区域上,金属箔具有阳极化部分,隔离与交替的N型和P型半导体区对应的金属箔的金属区域。
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公开(公告)号:US09627566B2
公开(公告)日:2017-04-18
申请号:US14954030
申请日:2015-11-30
申请人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
发明人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
IPC分类号: H01L31/0224 , H01L31/028 , H01L31/0475 , H01L31/05 , H01L31/0236 , H01L31/0745
CPC分类号: H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要: Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
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公开(公告)号:US09577139B2
公开(公告)日:2017-02-21
申请号:US14874254
申请日:2015-10-02
申请人: Matthieu Moors , Taeseok Kim
发明人: Matthieu Moors , Taeseok Kim
IPC分类号: H01L31/18 , H01L31/0224 , H01L31/068
CPC分类号: H01L31/022433 , H01L31/022441 , H01L31/0682 , H01L31/18 , H01L31/186 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要: A method for fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a first metal layer on the dielectric region. The method can also include forming a second metal layer on the first metal layer and locally heating a particular region of the second metal layer, where heating includes forming a metal bond between the first and second metal layer and forming a contact between the first metal layer and the solar cell structure. The method can include forming an adhesive layer on the first metal layer and forming a second metal layer on the adhesive layer, where the adhesive layer mechanically couples the second metal layer to the first metal layer and allows for an electrical connection between the second metal layer to the first metal layer.
摘要翻译: 公开了一种制造太阳能电池的方法。 该方法可以包括在太阳能电池结构的表面上形成电介质区域,并在电介质区域上形成第一金属层。 该方法还可以包括在第一金属层上形成第二金属层并局部加热第二金属层的特定区域,其中加热包括在第一和第二金属层之间形成金属键,并在第一金属层之间形成接触 和太阳能电池结构。 该方法可以包括在第一金属层上形成粘合剂层并在粘合剂层上形成第二金属层,其中粘合剂层将第二金属层机械地耦合到第一金属层,并允许第二金属层 到第一金属层。
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公开(公告)号:US20160079450A1
公开(公告)日:2016-03-17
申请号:US14954030
申请日:2015-11-30
申请人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
发明人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
IPC分类号: H01L31/0224 , H01L31/0475 , H01L31/028 , H01L31/05
CPC分类号: H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要: Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
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