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公开(公告)号：US11721539B2
公开(公告)日：2023-08-08
申请号：US17533593
申请日：2021-11-23
Inventor： Michael X. Yang , Rolf Bremensdorfer , Dave Camm , Joseph Cibere , Dieter Hezler , Shawming Ma , Yun Yang
IPC: H01J61/073 , H01J61/86 , H05H1/48 , H01J61/52 , H01J61/28
CPC classification number: H01J61/86 , H01J61/0732 , H01J61/28 , H01J61/526 , H05H1/48
Abstract: Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a water wall, the water wall configured to cool the arc lamp. The arc lamp can include a plurality of electrodes configured to generate a plasma in a forming gas introduced into the arc lamp via the one or more inlets. The forming gas can be or can include a mixture of a hydrogen gas and an inert gas, the hydrogen gas in the mixture having a concentration less than 4% by volume. The hydrogen gas can be introduced into the arc lamp prior to generating the plasma. The arc lamp may be used for processing workpieces.
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公开(公告)号：US11348784B2
公开(公告)日：2022-05-31
申请号：US16547724
申请日：2019-08-22
Inventor： Stephen E. Savas , Shawming Ma
IPC: H01L21/02 , H01L21/67 , H01L21/263 , H01J37/32 , H01L21/762
Abstract: Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.
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3.发明申请公开(公告)号：US20210343506A1
公开(公告)日：2021-11-04
申请号：US17245803
申请日：2021-04-30
Inventor： Ting Xie , Haochen Li , Shuang Meng , Qiqun Zhang , Dave Kohl , Shawming Ma , Haichun Yang , Hua Chung , Ryan M. Pakulski , Michael X. Yang
IPC: H01J37/32 , H01L21/67 , H01L21/3065
Abstract: Apparatus and methods for processing a workpiece using a plasma are provided. In one example implementation, an apparatus can include a processing chamber. The apparatus can include a plasma chamber comprising a dielectric tube defining a sidewall. The apparatus can include an inductively coupled plasma source. The inductively coupled plasma source can include an RF generator configured to energize an induction coil disposed about the dielectric tube. The apparatus can include a separation grid separating the processing chamber from the plasma chamber. The apparatus can include a controller configured to operate the inductively coupled plasma source in a pulsed mode. During the pulsed mode the RF generator is configured to apply a plurality of pulses of RF power to the induction coil. A frequency of pulses can be in a range of about 1 kHz to about 100 kHz.
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公开(公告)号：US10901321B2
公开(公告)日：2021-01-26
申请号：US16822747
申请日：2020-03-18
Inventor： Vijay M. Vaniapura , Shawming Ma , Li Hou
IPC: G03F7/42 , B08B7/00 , H01L21/311 , H01L21/308 , H01L21/3105
Abstract: Processes for removing a mask layer (e.g., doped amorphous carbon mask layer) from a substrate with high aspect ratio structures are provided. In one example implementation, a process can include depositing a polymer layer on at least a portion of a top end of a high aspect ratio structure on a substrate. The process can further include removing at least a portion of the polymer layer and the doped amorphous carbon film form the substrate using a plasma strip process. In example embodiments, depositing a polymer layer can include plugging one or more high aspect ratio structures with the polymer layer. In example embodiments, depositing a polymer layer can include forming a polymer layer on a sidewall of one or more high aspect ratio structures.
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5.发明授权公开(公告)号：US10580661B2
公开(公告)日：2020-03-03
申请号：US15582896
申请日：2017-05-01
Inventor： Shawming Ma
IPC: H01L21/311 , H01L21/3105 , H01J37/32
Abstract: A process for etching a film layer on a semiconductor wafer is disclosed. The process is particularly well suited to etching carbon containing layers, such as hardmask layers, photoresist layers, and other low dielectric films. In accordance with the present disclosure, a reactive species generated from a plasma is contacted with a surface of the film layer. Simultaneously, the substrate or semiconductor wafer is subjected to rapid thermal heating cycles that increase the temperature past the activation temperature of the reaction in a controlled manner.
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Patent Agency Ranking
公开(公告)号：US20180074409A1
公开(公告)日：2018-03-15
申请号：US15597283
申请日：2017-05-17
Applicant: Mattson Technology, Inc.
Inventor： Vijay M. Vaniapura , Shawming Ma , Li Hou
IPC: G03F7/42 , H01L21/308 , H01L21/3105 , B08B7/00
Abstract: Processes for removing a mask layer (e.g., doped amorphous carbon mask layer) from a substrate with high aspect ratio structures are provided. In one example implementation, a process can include depositing a polymer layer on at least a portion of a top end of a high aspect ratio structure on a substrate. The process can further include removing at least a portion of the polymer layer and the doped amorphous carbon film form the substrate using a plasma strip process. In example embodiments, depositing a polymer layer can include plugging one or more high aspect ratio structures with the polymer layer. In example embodiments, depositing a polymer layer can include forming a polymer layer on a sidewall of one or more high aspect ratio structures.
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公开(公告)号：US20180053628A1
公开(公告)日：2018-02-22
申请号：US15591163
申请日：2017-05-10
Applicant: Mattson Technology, Inc.
Inventor： Vijay M. Vaniapura , Shawming Ma , Vladimir Nagorny , Ryan M. Pakulski
CPC classification number: H01J37/3244 , H01J37/32357 , H01J37/32422 , H01J37/32522 , H01J37/32623 , H01J37/32724 , H01J2237/32 , H01L21/67248
Abstract: Separation grids for plasma processing apparatus are provided. In some embodiments, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a processing chamber. The processing chamber can be separated from the plasma chamber. The apparatus can include a separation grid. The separation grid can separate the plasma chamber and the processing chamber. The apparatus can include a temperature control system. The temperature control system can be configured to regulate the temperature of the separation grid to affect a uniformity of a plasma process on a substrate. In some embodiments, a separation grid can have a varying thickness profile across a cross-section of the separation grid to affect a flow of neutral species through the separation grid.
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8.发明授权公开(公告)号：US12159789B2
公开(公告)日：2024-12-03
申请号：US17372847
申请日：2021-07-12
Inventor： Shawming Ma
IPC: H01L21/311 , H01J37/32 , H01L21/3105
Abstract: A process for etching a film layer on a semiconductor wafer is disclosed. The process is particularly well suited to etching carbon containing layers, such as hardmask layers, photoresist layers, and other low dielectric films. In accordance with the present disclosure, a reactive species generated from a plasma is contacted with a surface of the film layer. Simultaneously, the substrate or semiconductor wafer is subjected to rapid thermal heating cycles that increase the temperature past the activation temperature of the reaction in a controlled manner.
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公开(公告)号：US12119216B2
公开(公告)日：2024-10-15
申请号：US18336552
申请日：2023-06-16
Inventor： Michael X. Yang , Rolf Bremensdorfer , Dave Camm , Joseph Cibere , Dieter Hezler , Shawming Ma , Yun Yang
IPC: H01J61/073 , H01J61/28 , H01J61/52 , H01J61/86 , H05H1/48
CPC classification number: H01J61/86 , H01J61/0732 , H01J61/28 , H01J61/526 , H05H1/48
Abstract: Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a water wall, the water wall configured to cool the arc lamp. The arc lamp can include a plurality of electrodes configured to generate a plasma in a forming gas introduced into the arc lamp via the one or more inlets. The forming gas can be or can include a mixture of a hydrogen gas and an inert gas, the hydrogen gas in the mixture having a concentration less than 4% by volume. The hydrogen gas can be introduced into the arc lamp prior to generating the plasma. The arc lamp may be used for processing workpieces.
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公开(公告)号：US11848204B2
公开(公告)日：2023-12-19
申请号：US17827198
申请日：2022-05-27
Inventor： Stephen E. Savas , Shawming Ma
IPC: H01L21/02 , H01L21/67 , H01J37/32 , H01L21/263 , H01L21/762
CPC classification number: H01L21/02315 , H01J37/32119 , H01J37/32651 , H01L21/02348 , H01L21/67207 , H01J37/32449 , H01L21/263 , H01L21/762
Abstract: Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.
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