-
1.发明授权公开(公告)号：US07463459B2
公开(公告)日：2008-12-09
申请号：US10781548
申请日：2004-02-18
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3912
摘要： A self pinned magnetoresistive sensor that has a relatively thick compressive material at either side to assist with self pinning. A shield having recessed portions at either side of the sensor area allows room for a thicker compressive layer than would otherwise be possible.
摘要翻译： 自固定磁阻传感器，在任一侧具有相对较厚的压缩材料以辅助自锁。 在传感器区域的任一侧具有凹入部分的屏蔽件允许比否则可能的空间更厚的压缩层。
-
2.发明授权Method of manufacturing a current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions 有权制造具有氧化自由层侧面区域的电流 - 垂直于平面的磁阻器件的方法公开(公告)号：US07043823B2
公开(公告)日：2006-05-16
申请号：US10869590
申请日：2004-06-15
申请人： Jeffrey R. Childress , Elizabeth A. Dobisz , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang , Son Van Nguyen
发明人： Jeffrey R. Childress , Elizabeth A. Dobisz , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang , Son Van Nguyen
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01L43/08 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A current-perpendicular-to the-plane (CPP) magnetoresistive device, such as a magnetic tunnel junction (MTJ), is formed by patterning a capping layer (e.g., using resist) in the shape of a central region of an underlying free ferromagnetic layer that in turn resides over additional layers of the MTJ. Side regions of the capping layer are removed by ion milling or etching down into the free ferromagnetic layer. Unmasked side regions of the ferromagnetic layer are then oxidized to render them locally non-ferromagnetic and electrically insulating.
摘要翻译： 电流垂直于平面（CPP）的磁阻器件，例如磁性隧道结（MTJ），是通过将覆盖层（例如，使用抗蚀剂）图案化成下层自由铁磁性的中心区域 层又依赖于MTJ的附加层。 通过离子铣削或蚀刻到自由铁磁层中去除覆盖层的侧面区域。 然后将铁磁性层的未掩模的侧面区域氧化，使其局部非铁磁性并电绝缘。
-
公开(公告)号：US07253991B2
公开(公告)日：2007-08-07
申请号：US10836918
申请日：2004-04-30
CPC分类号： G11B5/315 , G11B5/10 , G11B5/1278
摘要： A magnetic head (slider) for perpendicular recording which requires no lapping is described. The head is fabricated with an air bearing surface that is parallel to the wafer surface. The coil and pole pieces are formed from thin films disposed parallel to the air bearing surface. Standard lithographic techniques can be used to define the shapes, gaps and pole piece dimensions. Non-rectilinear shapes can be formed; for example, side shields that conform around the write pole piece region. The thickness of the main and return pole pieces are controlled by the deposition process rather than by lapping. The saw cuts used to separate the individual sliders from the rest of the wafer are perpendicular to the air-bearing surface and do not pass through any critical features.
摘要翻译： 描述了不需要研磨的用于垂直记录的磁头（滑块）。 该头部具有平行于晶片表面的空气轴承表面。 线圈和极片由平行于空气轴承表面设置的薄膜形成。 标准光刻技术可用于定义形状，间隙和极片尺寸。 可以形成非直线形状; 例如，围绕写入极片区域的侧面屏蔽。 主回极片和返回极片的厚度由沉积过程而不是研磨来控制。 用于将各个滑块与其余的晶片分开的锯切板垂直于空气轴承表面，并且不通过任何关键特征。
-
4.发明授权Magnetic tunnel junction device with bottom free layer and improved underlayer 有权具有底部自由层和改进的底层的磁隧道连接装置公开(公告)号：US06847510B2
公开(公告)日：2005-01-25
申请号：US10256722
申请日：2002-09-27
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3903 , G11B5/3909 , H01L43/08
摘要： A magnetic tunnel junction (MTJ) device usable as a magnetic memory cell or magnetoresistive sensor, such as a MTJ read head for magnetic recording, has the free ferromagnetic layer located on the bottom of the device, the bottom free layer being formed on a special underlayer. The MTJ read head may be a flux-guided head that uses the free layer as a flux guide for directing magnetic flux from the magnetic media to the sensing region of the MTJ. The special underlayer for the growth of the free layer is an alloy comprising Mn, one of Pt, Ni, Ir and Os, and an additive X selected from Ta, Al, Ti, Cu, Cr and V. Without the additive, the underlayer alloy is antiferromagnetic. The additive is present in an amount sufficient to render the alloy to have no magnetic ordering, i.e., it is neither antiferromagnetic nor ferromagnetic, but without substantially affecting the preferred crystalline texture and unit cell size so that the underlayer is well-suited as a growth-enhancing underlayer for the free layer.
摘要翻译： 可用作磁存储单元或磁阻传感器（例如用于磁记录的MTJ读头）的磁隧道结（MTJ）器件具有位于器件底部的自由铁磁层，底部自由层形成于特殊的 底层 MTJ读头可以是磁通引导头，其使用自由层作为磁通引导件，用于将磁通量从磁介质引导到MTJ的感测区域。 用于生长自由层的特殊底层是包含Mn，Pt，Ni，Ir和Os之一的合金，以及选自Ta，Al，Ti，Cu，Cr和V的添加剂X.没有添加剂，底层 合金是反铁磁的。 添加剂的存在量足以使合金不具有磁性排列，即它既不是反铁磁性的也不是铁磁性的，但是基本上不影响优选的晶体结构和晶胞尺寸，使得底层非常适合作为生长 - 增强自由层的底层。
-
5.发明授权In-stack longitudinal bias structure for CIP spin valve sensors with bias layer electrically insulated from free layer 有权用于具有与自由层电绝缘的偏置层的CIP自旋阀传感器的堆叠纵向偏置结构公开(公告)号：US06671139B2
公开(公告)日：2003-12-30
申请号：US10066067
申请日：2002-01-31
申请人： Kashmira J. Carey , Jeffrey R. Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Kashmira J. Carey , Jeffrey R. Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3932 , G11B2005/3996
摘要： A magnetization of a ferromagnetic free layer of a current-in-plane (CIP) sensor is stabilized using an in-stack longitudinal bias structure that includes a ferromagnetic bias layer and an anti-ferromagnetic bias layer. An electrically insulating layer separates the ferromagnetic free layer and the in-stack longitudinal bias structure, and thus the leads attached to the CIP sensor do not make direct electrical contact with the in-stack longitudinal bias structure. As a result, the sense current shunted by the in-stack longitudinal bias structure is prevented. Since a width along the off track direction of the in-stack longitudinal bias structure is greater than the track-width of the CIP sensor, the edge magnetostatic coupling filed acting on the ferromagnetic free layer from the track width edges of the in-stack longitudinal bias structure is reduced to approximately zero.
摘要翻译： 使用包括铁磁偏置层和反铁磁偏置层的堆叠内纵向偏置结构来稳定电流平面（CIP）传感器的铁磁自由层的磁化。 电绝缘层分离铁磁自由层和堆叠内纵向偏置结构，因此连接到CIP传感器的引线不与堆叠内纵向偏置结构直接电接触。 结果，防止了由堆叠内纵向偏置结构分流的感测电流。 由于沿着堆叠内纵向偏置结构的偏离轨道方向的宽度大于CIP传感器的轨道宽度，因此边缘静磁耦合场从堆叠纵向偏移结构的轨道宽度边缘起作用在铁磁自由层上 偏置结构减少到大约零。
-
公开(公告)号：US07414816B2
公开(公告)日：2008-08-19
申请号：US10857776
申请日：2004-05-28
摘要： A magnetic head (slider) which requires no lapping is described. The head is fabricated with an air bearing surface that is parallel to the wafer surface. The saw cuts used to separate the individual sliders from the rest of the wafer are perpendicular to the air-bearing surface and do not pass through any critical features. The read and write components are formed from thin films disposed parallel to the air bearing surface and can be side-by-side or tandem in relation to the recording track. The stripe height of the read sensor is controlled by the deposition process rather than by lapping. Various embodiments of the read head include contiguous junction biasing, external hard magnet biasing, and in-stack biasing. In one embodiment a permeable field collector is included below the sensor layer structure. An aperture shield surrounding the sensor at the ABS is included in one embodiment.
摘要翻译： 描述不需要研磨的磁头（滑块）。 该头部具有平行于晶片表面的空气轴承表面。 用于将各个滑块与其余的晶片分开的锯切板垂直于空气轴承表面，并且不通过任何关键特征。 读取和写入部件由平行于空气支承表面设置的薄膜形成，并且可以相对于记录轨道并排或串联。 读取传感器的条纹高度由沉积过程而不是研磨来控制。 读头的各种实施例包括连续的结偏置，外部硬磁体偏压和叠层偏置。 在一个实施例中，传感器层结构下面包括可渗透场收集器。 在ABS的一个实施例中包括围绕传感器的孔罩。
-
7.发明授权Read sensor having an in-stack biasing structure and an AP coupled free layer structure for increased magnetic stability 失效具有堆叠偏压结构的读取传感器和用于提高磁稳定性的AP耦合自由层结构公开(公告)号：US07324313B2
公开(公告)日：2008-01-29
申请号：US10955681
申请日：2004-09-30
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3903 , G11B5/3909 , G11B5/3932
摘要： Current-perpendicular-to-the-plane (CPP), current-in-to-the-plane (CIP), and tunnel valve type sensors are provided having an antiparallel (AP) coupled free layer structure, an in-stack biasing structure which stabilizes the AP coupled free layer structure and a nonmagnetic spacer layer formed between the in-stack biasing layer and the AP coupled free layer structure. The AP coupled free layer structure has a first AP coupled free layer adjacent to the nonmagnetic spacer layer, a second AP coupled free layer, and an antiparallel coupling (APC) layer formed between the first and the second AP coupled free layers. The net moment of the AP coupled free layer structure has an antiparallel edge magnetostatic coupling with the in-stack biasing structure. At the same time, the first AP coupled free layer has an antiparallel exchange coupling with the second AP coupled free layer. By forming the second AP coupled free layer with a thickness greater than a thickness of the first AP coupled free layer, the AP coupled free layer structure has a net magnetic moment in the direction of the second AP coupled free layer moment. The non-magnetic spacer layer is chosen so that first AP coupled free layer has a parallel interlayer (Neel or Orange-peel or positive exchange) coupling with the in-stack biasing structure, so that the interlayer coupling adds to the edge magnetostatic coupling to increase a stability of the AP coupled free layer structure.
摘要翻译： 提供了电流垂直于平面（CPP），电流平面（CIP）和隧道阀式传感器，其具有反平行（AP）耦合自由层结构，堆叠偏置结构 其稳定AP耦合的自由层结构和形成在堆叠间偏压层和AP耦合自由层结构之间的非磁性间隔层。 AP耦合自由层结构具有邻近非磁性间隔层的第一AP耦合自由层，第二AP耦合自由层以及形成在第一和第二AP耦合自由层之间的反并联耦合（APC）层。 AP耦合自由层结构的净矩具有与堆叠偏压结构的反平行边缘静磁耦合。 同时，第一AP耦合自由层与第二AP耦合自由层具有反平行交换耦合。 通过形成厚度大于第一AP耦合自由层的厚度的第二AP耦合自由层，AP耦合自由层结构在第二AP耦合自由层时刻的方向上具有净磁矩。 选择非磁性间隔层，使得第一AP耦合自由层具有与堆叠偏压结构耦合的平行中间层（Neel或橙色剥离或正交换），使得层间耦合增加了边缘静磁耦合 增加AP耦合自由层结构的稳定性。
-
8.发明授权CPP magnetoresistive sensors with in-stack longitudinal biasing and overlapping magnetic shield 失效CPP磁阻传感器具有堆叠纵向偏置和重叠磁屏蔽公开(公告)号：US06680832B2
公开(公告)日：2004-01-20
申请号：US09853352
申请日：2001-05-11
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/112 , G11B5/313 , G11B5/3909 , G11B5/3912 , G11B5/398 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor or read head has a magnetic shield geometry that covers the side walls of the sensor structure to prevent side reading caused by magnetic flux entering from adjacent data tracks. The shield geometry includes a bottom shield with a substantially planar surface and a specially shaped top shield. The top shield has substantially vertical portions generally parallel to the side walls of the sensor structure, a horizontal top portion over the trackwidth region of the sensor, and horizontal side portions formed over the portions of the bottom shield on either side of the sensor structure. The insulating gap material that separates the bottom and top shields is in contact with the horizontal portions of the bottom shield and the side walls of the sensor structure.
摘要翻译： 电流垂直平面（CPP）磁阻传感器或读头具有覆盖传感器结构的侧壁的磁屏蔽几何形状，以防止由相邻数据轨道进入的磁通量引起的侧读。 屏蔽几何形状包括具有基本平坦表面的底部屏蔽和特别形状的顶部屏蔽。 顶部屏蔽件具有大致平行于传感器结构的侧壁的大致垂直部分，在传感器的轨道宽度区域上方的水平顶部部分，以及形成在传感器结构的任一侧上的底部屏蔽部分之上的水平侧部分。 分离底部和顶部屏蔽件的绝缘间隙材料与底部屏蔽件的水平部分和传感器结构的侧壁接触。
-
公开(公告)号：US20080151596A1
公开(公告)日：2008-06-26
申请号：US11615618
申请日：2006-12-22
IPC分类号： G11C11/063 , H01L21/00
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
-
公开(公告)号：US07388776B1
公开(公告)日：2008-06-17
申请号：US11615618
申请日：2006-12-22
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译： 公开了磁存储器和方法。 如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。 位可以以磁畴的形式写入数据存储层。 然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。 通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。
-
-
-
-
-
-
-
-
-
搜索结果
59 条记录 (耗时 0.03 秒)
