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    In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes
    4.
    发明授权
    In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes 有权

    公开(公告)号：US11869922B2

    公开(公告)日：2024-01-09

    申请号：US17866452

    申请日：2022-07-15

    申请人： Meta Platforms Technologies, LLC

    发明人： Anurag Tyagi ,  James Ronald Bonar ,  Gareth Valentine

    IPC分类号： H01L27/15

    CPC分类号： H01L27/156

    摘要： LED apparatuses and corresponding manufacturing techniques are described. In some examples, an LED apparatus includes a mesa etched from a layered epitaxial structure. The layered epitaxial structure includes a quantum well layer and a barrier layer adjacent to the quantum well layer. The barrier layer overhangs the quantum well layer as a result of the quantum well layer having been etched to a greater depth compared to the barrier layer. In some examples, the quantum well layer and the barrier layer are etched together to produce an area where the barrier layer overhangs the quantum well layer. Etching of the quantum well layer and the barrier layer can be performed after the layered epitaxial structure has been etched to form the mesa, in order to reduce surface imperfections leftover from the mesa etch. In some examples, one or more regrowth semiconductor layers are formed over etched facets of the mesa.

    In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes
    7.
    发明授权
    In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes 有权

    公开(公告)号：US11424289B2

    公开(公告)日：2022-08-23

    申请号：US17096764

    申请日：2020-11-12

    申请人： Meta Platforms Technologies, LLC

    发明人： Anurag Tyagi ,  James Ronald Bonar ,  Gareth Valentine

    IPC分类号： H01L27/15

    摘要： LED apparatuses featuring etched mesas and techniques for manufacturing LED apparatuses are described, including techniques for reducing surface recombination and techniques for charge carrier confinement. Etched facets of an LED mesa can be passivated using epitaxial regrowth of one or more semiconductor regrowth layers. The one or more semiconductor regrowth layers can include a transition layer. The transition layer can be configured with a bandgap energy between that of layers that are on opposite sides of the transition layer. A transition layer can separate an etched facet and another regrowth layer or separate two regrowth layers. In some instances, selective etching can be performed to preferentially etch a quantum well layer relative to a barrier layer. The selective etching removes surface imperfections, which contribute to surface recombination and which tend to be more prevalent in etched facets of the quantum well layer than etched facets of the barrier layer.