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    Display backplanes with integrated electronics, photonics and color conversion components
    1.
    发明授权
    Display backplanes with integrated electronics, photonics and color conversion components 有权

    公开(公告)号：US12216357B2

    公开(公告)日：2025-02-04

    申请号：US18464338

    申请日：2023-09-11

    Applicant: Meta Platforms Technologies, LLC

    Inventor： Zhimin Shi ,  Xi Wu ,  James Ronald Bonar ,  Yun Wang ,  Edward Buckley

    IPC: G02F1/1335 ,  F21V8/00

    Abstract: In some examples, an apparatus may include a backlight unit (BLU) including an electronic integrated circuit layer, a photonic integrated circuit layer, a color conversion module, and a display interface layer. In some examples, a BLU may include at least one laser or may be configured to receive laser light from at least one external laser source. Laser light may be transmitted towards a portion of the display interface layer using the photonic integrated circuit. Color conversion modules may be used to convert the laser light into one or more desired colors. Example apparatus may be used in head-mounted devices such as augmented reality and/or virtual reality devices. Other devices, methods, systems, and computer-readable media are also disclosed.

    In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes
    6.
    发明授权
    In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes 有权

    公开(公告)号：US11424289B2

    公开(公告)日：2022-08-23

    申请号：US17096764

    申请日：2020-11-12

    Applicant: Meta Platforms Technologies, LLC

    Inventor： Anurag Tyagi ,  James Ronald Bonar ,  Gareth Valentine

    IPC: H01L27/15

    Abstract: LED apparatuses featuring etched mesas and techniques for manufacturing LED apparatuses are described, including techniques for reducing surface recombination and techniques for charge carrier confinement. Etched facets of an LED mesa can be passivated using epitaxial regrowth of one or more semiconductor regrowth layers. The one or more semiconductor regrowth layers can include a transition layer. The transition layer can be configured with a bandgap energy between that of layers that are on opposite sides of the transition layer. A transition layer can separate an etched facet and another regrowth layer or separate two regrowth layers. In some instances, selective etching can be performed to preferentially etch a quantum well layer relative to a barrier layer. The selective etching removes surface imperfections, which contribute to surface recombination and which tend to be more prevalent in etched facets of the quantum well layer than etched facets of the barrier layer.

    DISPLAY BACKPLANES WITH INTEGRATED ELECTRONICS, PHOTONICS AND COLOR CONVERSION
    7.
    发明公开
    DISPLAY BACKPLANES WITH INTEGRATED ELECTRONICS, PHOTONICS AND COLOR CONVERSION 审中-公开

    公开(公告)号：US20240085740A1

    公开(公告)日：2024-03-14

    申请号：US18464338

    申请日：2023-09-11

    Applicant: Meta Platforms Technologies, LLC

    Inventor： Zhimin Shi ,  Xi Wu ,  James Ronald Bonar ,  Yun Wang ,  Edward Buckley

    IPC: G02F1/1335 ,  F21V8/00

    CPC classification number: G02F1/133614 ,  G02B6/0001

    Abstract: In some examples, an apparatus may include a backlight unit (BLU) including an electronic integrated circuit layer, a photonic integrated circuit layer, a color conversion module, and a display interface layer. In some examples, a BLU may include at least one laser or may be configured to receive laser light from at least one external laser source. Laser light may be transmitted towards a portion of the display interface layer using the photonic integrated circuit. Color conversion modules may be used to convert the laser light into one or more desired colors. Example apparatus may be used in head-mounted devices such as augmented reality and/or virtual reality devices. Other devices, methods, systems, and computer-readable media are also disclosed.

    In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes
    8.
    发明授权
    In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes 有权

    公开(公告)号：US11869922B2

    公开(公告)日：2024-01-09

    申请号：US17866452

    申请日：2022-07-15

    Applicant: Meta Platforms Technologies, LLC

    Inventor： Anurag Tyagi ,  James Ronald Bonar ,  Gareth Valentine

    IPC: H01L27/15

    CPC classification number: H01L27/156

    Abstract: LED apparatuses and corresponding manufacturing techniques are described. In some examples, an LED apparatus includes a mesa etched from a layered epitaxial structure. The layered epitaxial structure includes a quantum well layer and a barrier layer adjacent to the quantum well layer. The barrier layer overhangs the quantum well layer as a result of the quantum well layer having been etched to a greater depth compared to the barrier layer. In some examples, the quantum well layer and the barrier layer are etched together to produce an area where the barrier layer overhangs the quantum well layer. Etching of the quantum well layer and the barrier layer can be performed after the layered epitaxial structure has been etched to form the mesa, in order to reduce surface imperfections leftover from the mesa etch. In some examples, one or more regrowth semiconductor layers are formed over etched facets of the mesa.

    HIGH PERFORMANCE BACKLIGHT DEVICE USING PHOTONIC INTEGRATED CIRCUITS
    9.
    发明公开
    HIGH PERFORMANCE BACKLIGHT DEVICE USING PHOTONIC INTEGRATED CIRCUITS 审中-公开

    公开(公告)号：US20230194925A1

    公开(公告)日：2023-06-22

    申请号：US17985063

    申请日：2022-11-10

    Applicant: Meta Platforms Technologies, LLC

    Inventor： Zhimin Shi ,  James Ronald Bonar ,  Wanli Chi

    IPC: G02F1/13357 ,  G02B27/01

    CPC classification number: G02F1/133605 ,  G02F1/133606 ,  G02B27/0172 ,  G02F2201/05 ,  G02F2201/302 ,  G02F2201/38

    Abstract: Embodiments of the present disclosure relate to a high performance backlight device with photonic integrated circuits. The backlight device includes a light source assembly, a multi-mode slab waveguide, and an out-coupling assembly. The light source assembly includes one or more light sources that generate light in accordance with emission instructions, and a de-speckling mechanism that conditions the generated light to mitigate speckle. The multi-mode slab waveguide in-couples the conditioned light and expands the in-coupled conditioned light in two dimensions to form a homogenous area of conditioned light within a region of the multi-mode slab waveguide. The out-coupling assembly out-couples the conditioned light from the region in a direction normal to the two dimensions, wherein a light modulation layer forms an image from the out-coupled conditioned light.

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