Notch beveling on semiconductor wafer edges
    4.
    发明授权
    Notch beveling on semiconductor wafer edges 失效
    半导体晶片边缘上的凹口斜面

    公开(公告)号:US5289661A

    公开(公告)日:1994-03-01

    申请号:US995447

    申请日:1992-12-23

    IPC分类号: B24B9/06 B24B9/08

    CPC分类号: B24B9/065

    摘要: An apparatus and method of contouring the edge of a semiconductor wafer in a fiduciary mark notch utilizes a contouring wheel or burr having a smaller diameter than the diameter of the fiduciary mark notch.

    摘要翻译: 在受托标记凹口中轮廓化半导体晶片的边缘的装置和方法利用具有比受信标记凹口的直径小的直径的轮廓轮或毛刺。

    Method for measuring saw blade flexure
    5.
    发明授权
    Method for measuring saw blade flexure 失效
    测量锯片弯曲度的方法

    公开(公告)号:US4498345A

    公开(公告)日:1985-02-12

    申请号:US432619

    申请日:1982-10-04

    摘要: A system for measuring the flexure of a saw blade in situ includes in one embodiment a non-contact displacement sensor and means for directing a fluid flow at the blade adjacent the sensor. The deflection of the blade by the fluid flow is detected by the sensor which generates a signal related to blade flexure. The system indicates when a saw blade is correctly tensioned or when retensioning is required.

    摘要翻译: 用于测量锯片原位弯曲的系统包括在一个实施例中为非接触位移传感器和用于引导邻近传感器的叶片处的流体流动的装置。 通过流体流动的叶片的偏转由传感器检测,该传感器产生与叶片挠曲相关的信号。 系统指示锯片何时正确张紧或需要重新拉紧时。

    Method of reducing wafer particles after partial saw using a superhard
protective coating
    6.
    发明授权
    Method of reducing wafer particles after partial saw using a superhard protective coating 失效
    使用超硬保护涂层在部分锯片之后还原晶粒的方法

    公开(公告)号:US6063696A

    公开(公告)日:2000-05-16

    申请号:US72399

    申请日:1998-05-04

    IPC分类号: H01L21/78 H01L21/46

    CPC分类号: H01L21/78

    摘要: A method of fabricating a monolithic device, preferably a micromechanical device, from a wafer (20) by carefully selecting the composition of two or more layers of photoresist (52,54). The present invention uses a superhard protective layer such as DLC or TiW deposited over the partially fabricated device prior to a partial-saw. This superhard protective layer reduces the generation of defects in the underlying photoresist layers, and allows a wet chemical HF acid to etch away particles and damage of the underlying oxide edges. A 6% BHF solution can be utilized. The present invention substantially improves the yield of micromechanical devices.

    摘要翻译: 通过仔细选择两层或更多层光致抗蚀剂(52,54)的组成,从晶片(20)制造单片器件(优选微机械器件)的方法。 本发明在部分锯之前使用在部分制造的器件上沉积的超硬保护层,例如DLC或TiW。 该超硬保护层减少了底层光致抗蚀剂层中的缺陷的产生,并且允许湿化学HF酸蚀刻掉颗粒并损坏下面的氧化物边缘。 可以使用6%的BHF溶液。 本发明大大提高了微机械装置的产量。

    Method of reducing wafer particles after partial saw
    7.
    发明授权
    Method of reducing wafer particles after partial saw 失效
    部分锯后减少晶粒的方法

    公开(公告)号:US5817569A

    公开(公告)日:1998-10-06

    申请号:US855750

    申请日:1997-05-08

    CPC分类号: H01L21/02052 H01L21/78

    摘要: A method of fabricating a monolithic device, preferably a micromechanical device, from a wafer (20) by carefully selecting the composition of two or more layers of photoresist (52,54). The present invention comprises choosing compatible photoresist layers to avoid generating defects in the layers of photoresist which could allow a wet chemical HF acid etch process to damage an underlying micromechanical device. The present invention allows a very strong solution of hydrofluoric acid to be utilized to remove particles and debris after a partial-saw process, and to remove a damaged portion of an underlying CMOS layer (22) at a region (68) proximate a kerf (62). Using an HF solution having a concentration of about 6% is desired. The present invention substantially improves the yield of micromechanical devices.

    摘要翻译: 通过仔细选择两层或更多层光致抗蚀剂(52,54)的组成,从晶片(20)制造单片器件(优选微机械器件)的方法。 本发明包括选择兼容的光致抗蚀剂层以避免在光致抗蚀剂层中产生缺陷,这可能允许湿化学HF酸蚀刻工艺损坏下面的微机械装置。 本发明允许使用非常强的氢氟酸溶液在部分锯切过程之后去除颗粒和碎屑,并且在靠近切口的区域(68)去除下面的CMOS层(22)的损坏部分( 62)。 需要使用浓度为约6%的HF溶液。 本发明大大提高了微机械装置的产量。