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    Method of creating a high performance organic semiconductor device
    1.
    发明授权
    Method of creating a high performance organic semiconductor device 失效
    制造高性能有机半导体器件的方法

    公开(公告)号：US06784017B2

    公开(公告)日：2004-08-31

    申请号：US10218141

    申请日：2002-08-12

    申请人： Yang Yang ,  Liping Ma ,  Michael L. Beigel

    发明人： Yang Yang ,  Liping Ma ,  Michael L. Beigel

    IPC分类号： H01L5140

    CPC分类号： H01L51/0579 ,  B82Y10/00 ,  H01L51/0021 ,  H01L51/0026 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0041 ,  H01L51/0044 ,  H01L51/0046 ,  H01L51/005 ,  H01L51/0051 ,  H01L51/0052 ,  H01L51/0059 ,  H01L51/0077 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/0512 ,  H01L51/0541 ,  H01L51/5206 ,  H01L51/5209 ,  H01L51/5221

    摘要： A high temperature thermal annealing process creates a low resistance contact between a metal material and an organic material of an organic semiconductor device, which improves the efficiency of carrier injection. The process forms ohmic contacts and Schottky contacts. Additionally, the process may cause metal ions or atoms to migrate or diffuse into the organic material, cause the organic material to crystallize, or both. The resulting organic semiconductor device has enhanced operating characteristics such as faster speeds of operation. Instead of using heat, the process may use other forms of energy, such as voltage, current, electromagnetic radiation energy for localized heating, infrared energy and ultraviolet energy. An example enhanced organic diode comprising aluminum, carbon C60, and copper is described, as well as example insulated gate field effect transistors.

    摘要翻译： 高温热退火工艺在金属材料和有机半导体器件的有机材料之间产生低电阻接触，这提高了载流子注入的效率。 该过程形成欧姆接触和肖特基接触。 另外，该过程可能导致金属离子或原子迁移或扩散到有机材料中，导致有机材料结晶，或两者都结合。 所得到的有机半导体器件具有增强的操作特性，例如更快的操作速度。 代替使用热量，该方法可以使用其他形式的能量，例如用于局部加热的电压，电流，电磁辐射能量，红外能量和紫外线能量。 描述了包括铝，碳C60和铜的增强有机二极管的示例，以及示例性绝缘栅场效应晶体管。

    Bottle cap
    4.
    外观设计
    Bottle cap 有权

    公开(公告)号：USD1025689S1

    公开(公告)日：2024-05-07

    申请号：US29884242

    申请日：2023-02-09

    申请人： Yang Yang

    设计人： Yang Yang

    摘要： FIG. 1 is a front, right and top perspective view of a bottle cap, showing my design.
    FIG. 2 is a rear, left and bottom perspective view thereof.
    FIG. 3 is a front elevation view thereof.
    FIG. 4 is a rear elevation view thereof.
    FIG. 5 is a left side elevation view thereof.
    FIG. 6 is a right side elevation view thereof.
    FIG. 7 is a top plan view thereof.
    FIG. 8 is a bottom plan view thereof; and,
    FIG. 9 is an enlarged view of detail 9 in FIG. 1.
    The broken lines depict portions of the bottle cap that form no part of the claimed design.
    The dot-dash broken lines in FIGS. 1 and 9 depict the boundaries of the enlargements that form no part of the claimed design.

    Physical resource sharing on wireless interface
    7.
    发明授权
    Physical resource sharing on wireless interface 有权

    公开(公告)号：US10779283B2

    公开(公告)日：2020-09-15

    申请号：US15168991

    申请日：2016-05-31

    申请人： Yigang Cai ,  Yang Yang

    发明人： Yigang Cai ,  Yang Yang

    IPC分类号： H04W72/04 ,  H04W4/70 ,  H04L5/00 ,  H04L12/801 ,  H04W28/02 ,  H04W72/12 ,  H04W74/08

    摘要： The present disclosure generally discloses a wireless resource sharing mechanism configured to support sharing of physical wireless resources of a wireless interface of a wireless access device. The wireless resource sharing mechanism is configured to support sharing of physical wireless resources of a wireless interface of a wireless access device in order to support Machine-Type Communications (MTCs). The wireless resource sharing mechanism is configured to support sharing of physical wireless resources, of a wireless interface of a wireless access device, between MTC traffic of MTC devices and non-MTC traffic of non-MTC devices (referred to herein as legacy traffic of legacy devices). The wireless resource sharing mechanism is configured to support sharing of physical wireless resources, of a wireless interface of a wireless access device, within a scheduling time interval of the wireless interface of the wireless access device.

    Ni(OH)2 NANOPOROUS FILMS AS ELECTRODES
    9.
    发明申请
    Ni(OH)2 NANOPOROUS FILMS AS ELECTRODES 审中-公开
    Ni（OH）2纳米膜作为电极

    公开(公告)号：US20160379764A1

    公开(公告)日：2016-12-29

    申请号：US15193529

    申请日：2016-06-27

    申请人： James M. Tour ,  Yang Yang

    发明人： James M. Tour ,  Yang Yang

    IPC分类号： H01G11/30 ,  H01M4/52 ,  H01M4/90 ,  H01G11/86 ,  H01M4/04 ,  C25D9/06 ,  H01G11/68 ,  H01G11/26 ,  H01M4/66 ,  H01M4/88

    CPC分类号： H01G11/30 ,  C25D9/06 ,  C25D11/34 ,  H01B1/02 ,  H01G11/26 ,  H01G11/68 ,  H01G11/86 ,  H01M4/0442 ,  H01M4/0471 ,  H01M4/52 ,  H01M4/661 ,  H01M4/8817 ,  H01M4/8853 ,  H01M4/9016 ,  H01M8/0206 ,  H01M8/0232 ,  H01M2004/021

    摘要： The present disclosure pertains to electrodes that include a nickel-based material and at least one porous region with a plurality of nickel hydroxide moieties on a surface of the nickel-based material. The nickel-based material may be a nickel foil in the form of a film. The porous region of the electrode may be directly associated with the surface of the nickel-based material. The nickel hydroxide moieties may be in crystalline form and embedded with the porous region. The electrodes of the present disclosure may be a component of an energy storage device, such as a capacitor. Additional embodiments of the present disclosure pertain to methods of fabricating the electrodes by anodizing a nickel-based material to form at least one porous region on a surface of the nickel-based material; and hydrothermally treating the porous region to form nickel hydroxide moieties associated with the porous region.

    摘要翻译： 本公开涉及包括镍基材料的电极和在镍基材料的表面上具有多个氢氧化镍部分的至少一个多孔区域。 镍基材料可以是膜形式的镍箔。 电极的多孔区域可以直接与镍基材料的表面相关联。 氢氧化镍部分可以是结晶形式并且嵌入多孔区域。 本公开的电极可以是诸如电容器的能量存储装置的部件。 本公开的另外的实施例涉及通过阳极氧化镍基材料以在镍基材料的表面上形成至少一个多孔区域来制造电极的方法; 并水热处理多孔区以形成与多孔区相关联的氢氧化镍部分。