摘要:
In the presence of certain polyols, a guar gum or similar polysaccharide thickener solution is boron crosslinked before achievement of complete hydration of the thickener, without compromising the viscosity level achieved in a fracturing fluid by the time it is pumped into the wellbore and fractures the subterranean formation adjacent the wellbore. Methods continuously involve hydrating a polysaccharide thickener to an extent of 10% to 75%, but less than full hydration. Before 75% hydration is exceeded, a boron crosslinker is added. Upon addition of the boron crosslinker, the fluid is injected into the wellbore to stimulate hydrocarbon production. Because less time is needed for hydration, well site mixing equipment is down-sized smaller to achieve better efficiency and cost savings.
摘要:
Suspensions are provided of water-soluble materials in non-aqueous carrier fluids using suspension agents that include thixotropic agents and, optionally, organophilic clays. Methods of forming such suspensions are provided. Methods are also provided for using such suspensions to prepare aqueous solutions, in particular thickened aqueous solutions, in particular for use in oilfield treatments.
摘要:
An integrated circuit having a first and second bond pads, a latch circuit, and a voltage lead. Different configurations of the internal circuitry of the integrated circuit are selected by applying the voltage lead either to the first or second bond pads. This result is achieved because the latch circuit, coupled between the first and second bond pads, is capable of inverting the voltage response seen at the first bond pad.
摘要:
A high-speed, static random access memory (SRAM) compatible, high availability memory array and method employing synchronous dynamic random access memory (DRAM) in conjunction with a data cache and separate data read and write registers and tag blocks. The inclusion of separate data read and write registers allows the device to effectively operate at a cycle time limited only by the DRAM subarray cycle time. Further, the inclusion of two tag blocks allows one to be accessed with an externally supplied address and the other to be accessed with a write-back address, thus eliminating the requirement for a single tag to execute two read-modify write cycles in one DRAM cycle time.
摘要:
A powergating circuit includes a P-channel transistor with a source coupled to VCC, a gate for receiving a first boosted or non-boosted powergating control signal, and a drain forming the internal switched VCC power supply. An N-channel transistor has a source coupled to VSS, a gate for receiving a second boosted or non-boosted powergating control signal, and a drain forming the internal switched VSS power supply. The powergating circuit further includes a circuit for forcing the first and second internal power supply voltages to a mid-point reference voltage during the standby mode.
摘要:
Methods and compositions are disclosed for controlled addition of components that decrease the viscosity of the viscoelastic surfactant fluids or for controlled changes in the electrolyte concentration or composition of the viscoelastic surfactant fluids. One aspect of the invention relates to the use of internal breakers with a delayed activation. Another aspect of the invention relates to the use of precursors that release a breaking system such as alcohol by a process such as melting, slow dissolution, reaction with a compound present in the fluid or added to the fluid during or after the step of injecting, rupture of an encapsulating coating and de-adsorption of a breaking agent absorbed into solid particles. In another aspect of the invention, alcohols are included in a pad to reduce the low-shear viscosity and reduce the resistance to flow of the treatment fluids during a desired phase of the treatment.
摘要:
Polarization retention of a ferroelectric material in a memory cell is improved by open circuiting the write pulse. The depolarizing field is reduced by allowing charge to dissipate through the ferroelectric material, causing a polarizing field.
摘要:
A cache and tag power-down function during low-power data retention standby mode technique for cached integrated circuit memory devices, in particular cached dynamic random access memory (DRAM) and cached static random access memory (SRAM), wherein the data in the cache is written back from cache to the main memory arrays (write-back operation) when power-down is entered such that the cache, tag and much of the cache control logic can be powered-down during power-down standby mode. If a DRAM cache is used, the refresh cycles can be inhibited to the DRAM cache, since it has been powered-down, so that additional power savings can be realized during self-refresh power-down standby. When power-down standby is exited, the cache operations are enabled as soon as the cache, tag and control circuitry are powered-up and a clear tag sequence is executed.
摘要:
A circuit and method for a memory device, such as a synchronous dynamic random access memory (SDRAM) having at least two memory banks. Columns of at least two memory banks are concurrently addressable to permit data to be written to, or read from, the at least two memory banks concurrently. By writing data concurrently to more than one memory bank, testing of the memory of the memory device can be effectuated in a reduced period of time. Data can also be written or read from a single bank in a multi-bank RAM without requiring that a particular bank be specified during a read/write command.
摘要:
A transpolarizer is employed as a programmable capacitance divider. Two ferroelectric capacitors are coupled in series to form a common node and two extreme poles. The polarization of the two capacitors is set by grounding the two poles and then bringing them both up to VCC while impressing a voltage at the common node corresponding to data to be stored. Therefore, while one pole is held at VSS, the other pole is pulsed from VSS to VCC with the common node floating. A voltage develops at the common node which is above or below the midpoint between VSS and VCC, and will be indicative of the stored data. The capacitance divider is programmed in accordance with data. One such divider is added to a DRAM memory cell to form a shadow DRAM cell. Two such dividers are added to a static RAM memory cell to form a shadow static RAM cell. The same divider arrangement is operable in both volatile and non-volatile modes. An improvement arises by using PZT as dielectric in 54:46 mole ratio.