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    Etching of silicon dioxide selectively to silicon nitride and polysilicon
    7.
    发明授权
    Etching of silicon dioxide selectively to silicon nitride and polysilicon 失效
    二氧化硅选择性地蚀刻到氮化硅和多晶硅

    公开(公告)号：US5505816A

    公开(公告)日：1996-04-09

    申请号：US168887

    申请日：1993-12-16

    申请人： Michael S. Barnes ,  John H. Keller ,  William M. Holber ,  Tina J. Cotler ,  Jonathan D. Chapple-Sokol ,  Dragan Podlesnik

    发明人： Michael S. Barnes ,  John H. Keller ,  William M. Holber ,  Tina J. Cotler ,  Jonathan D. Chapple-Sokol ,  Dragan Podlesnik

    IPC分类号： H01L21/311 ,  H01L21/00

    CPC分类号： H01L21/31116 ,  Y10S438/906

    摘要： Silicon dioxide on a substrate is directionally etched using a hydrogen halide plasma which is created within an etch chamber. The method selectively etches silicon dioxide relative to polysilicon and silicon nitride. A substrate and the combination of NH.sub.3 and NF.sub.3 gases or the combination of CF.sub.4 and O.sub.2 gases mixed with H.sub.2 and N.sub.2 gases are located within an etch chamber. An electrical field is created within the etch chamber causing the gas mixture to form a plasma. The negative charge at the bottom of the chamber attracts the positively charged plasma, thereby etching the substrate in the downward direction. The result is an anisotropic product. The method is also shown to be effective in non-selectively etching thermal and deposited oxides, resulting in a similar etch rate for the different types of oxides.

    摘要翻译： 使用在蚀刻室内产生的卤化氢等离子体对衬底上的二氧化硅进行定向蚀刻。 该方法选择性地相对于多晶硅和氮化硅蚀刻二氧化硅。 衬底和NH3和NF3气体的组合或与H 2和N 2气体混合的CF 4和O 2气体的组合位于蚀刻室内。 在蚀刻室内产生电场，使得气体混合物形成等离子体。 室底部的负电荷吸引带正电的等离子体，从而沿向下的方向蚀刻衬底。 其结果是各向异性产品。 该方法还显示在非选择性蚀刻热和沉积氧化物中有效，导致不同类型氧化物的蚀刻速率相似。

    Gettering of particles during plasma processing
    8.
    发明授权
    Gettering of particles during plasma processing 失效
    在等离子体处理期间吸收颗粒

    公开(公告)号：US5433258A

    公开(公告)日：1995-07-18

    申请号：US191894

    申请日：1994-02-04

    申请人： Michael S. Barnes ,  Dennis K. Coultas ,  John C. Forster ,  John H. Keller ,  James A. O'Neill

    发明人： Michael S. Barnes ,  Dennis K. Coultas ,  John C. Forster ,  John H. Keller ,  James A. O'Neill

    IPC分类号： C23C14/00 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/30 ,  C23C14/34 ,  C23C16/50 ,  H05H1/00

    CPC分类号： H01J37/32431 ,  H01J2237/022 ,  H01J2237/028

    摘要： Apparatus and methods for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.

    摘要翻译： 公开了用于等离子体处理的装置和方法，其涉及吸收远离半导体晶片的高电荷质量比的颗粒。 在本发明的一个方面，磁体用于产生横向于电场的磁场，以将负极微粒从晶片上拉出以防止形成能够捕获颗粒的护套。 在本发明的第二方面中，电源连接到晶片电极以在晶片上保持负电荷，从而防止当等离子体截止时负极被吸引到晶片表面。 在本发明的其它实施例中，使用低密度等离子体源来产生允许颗粒穿过室的大等离子体鞘。 使用低密度等离子体放电，随后是脉冲到较高密度，以克服晶片和晶片电极之间的绝缘层的负面影响。

    Optimized helical resonator for plasma processing
    9.
    发明授权
    Optimized helical resonator for plasma processing 失效
    用于等离子体处理的优化螺旋谐振器

    公开(公告)号：US5241245A

    公开(公告)日：1993-08-31

    申请号：US879663

    申请日：1992-05-06

    申请人： Michael S. Barnes ,  Dennis K. Coultas ,  John G. Forster ,  John H. Keller

    发明人： Michael S. Barnes ,  Dennis K. Coultas ,  John G. Forster ,  John H. Keller

    IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01P7/00

    CPC分类号： H01J37/321

    摘要： An optimized helical resonator which increases the plasma density for efficient processing of semiconductor wafers is characterized by a low inductance and, hence, a low Q. A first embodiment uses either a distributed or lumped capacitance to reduce the value of .omega.L to less than about 200 Ohms. A second embodiment uses a flat spiral coil having a low value of .omega.L and resonant as a 1/4 or 1/2 wave resonator. A third embodiment combines features of the first two embodiments using both spiral and solenoid coils as the helical resonator.

    摘要翻译： 提高用于半导体晶片的有效处理的等离子体密度的优化螺旋谐振器的特征在于低电感，因此具有低Q.第一实施例使用分布式或集总电容将ωL的值减小到小于约 200欧姆 第二实施例使用具有低ΩΩL值并且谐振的扁平螺旋线圈作为1/4或1/2波形谐振器。 第三实施例组合了使用螺旋和螺线管线圈的前两个实施例的特征作为螺旋谐振器。

    Method of reducing particulates in a plasma tool through steady state flows
    10.
    发明授权
    Method of reducing particulates in a plasma tool through steady state flows 失效
    通过稳态流减少等离子体工具中的微粒的方法

    公开(公告)号：US5543184A

    公开(公告)日：1996-08-06

    申请号：US450120

    申请日：1995-05-25

    申请人： Michael S. Barnes ,  Dennis K. Coultas ,  John C. Forster ,  John H. Keller ,  Thomas Wicker

    发明人： Michael S. Barnes ,  Dennis K. Coultas ,  John C. Forster ,  John H. Keller ,  Thomas Wicker

    IPC分类号： C23C16/44 ,  H01J37/32 ,  H05H1/02

    CPC分类号： H01J37/32871 ,  C23C16/4401

    摘要： A method and apparatus for reducing particulates in a plasma tool using steady state flows includes a device, operatively coupled to a housing in which an object to be processed is positioned, for generating a plasma flow adjacent the object toward a pumping aperture. A pumping mechanism pumps a medium adjacent the object. The medium supports the plasma and entrains particulates in the plasma away from the object and out the pumping aperture. Magnetic fields, produced by multipole magnets forming a ring cusp, are preferably used to produce the plasma flow which is directed radially away from the object to be processed. In a second embodiment, an array of magnets which form a line cusp is provided to produce an opening through which plasma will flow.

    摘要翻译： 用于使用稳态流减少等离子体工具中的微粒的方法和装置包括可操作地耦合到壳体的装置，其中待处理对象被定位在其中，用于产生邻近物体朝向泵送孔径的等离子体流。 泵送机构泵送邻近物体的介质。 介质支持等离子体，并将离子束中的等离子体中的微粒夹带在泵送孔径之外。 由形成环尖的多极磁体产生的磁场优选用于产生径向远离待处理物体的等离子体流。 在第二实施例中，提供形成线尖端的磁体阵列以产生等离子体将流过的开口。