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1.发明授权公开(公告)号：US06351326B1
公开(公告)日：2002-02-26
申请号：US09465222
申请日：1999-12-14
IPC分类号： G02F103
CPC分类号： G02F1/2257 , G02F2201/302 , G02F2201/346 , G02F2202/104 , G02F2203/15
摘要： An optical modulator that modulates an optical beam through directed through an integrated circuit die. In one embodiment, the optical beam is directed into and out of a flip chip packaged integrated circuit die. In one embodiment, the optical modulator includes a resonant cavity structure. In one embodiment, the resonant cavity structure is disposed in the dielectric layer of the integrated circuit die. In one embodiment, the optical beam is directed into the integrated circuit die and through the resonant cavity structure and is modulated in response to an integrated circuit signal of the integrated circuit die. In one embodiment, the optical beam is modulated by modulating the resonant wavelength of the resonant cavity structure in response to the integrated circuit signal. A modulated optical beam is directed from the resonant cavity structure back out of the integrated circuit die.
摘要翻译： 光调制器，其通过引导通过集成电路管芯来调制光束。 在一个实施例中，光束被引导到倒装芯片封装的集成电路管芯中和外。 在一个实施例中，光调制器包括谐振腔结构。 在一个实施例中，谐振腔结构设置在集成电路管芯的电介质层中。 在一个实施例中，光束被引导到集成电路管芯中并通过谐振腔结构，并且响应于集成电路管芯的集成电路信号被调制。 在一个实施例中，通过响应于集成电路信号调制谐振腔结构的谐振波长来调制光束。 调制光束从谐振腔结构引出集成电路管芯。
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2.发明授权公开(公告)号：US06215577B1
公开(公告)日：2001-04-10
申请号：US09435058
申请日：1999-10-25
申请人： Sean M. Koehl , Mario J. Paniccia , Dmitri Nikonov
发明人： Sean M. Koehl , Mario J. Paniccia , Dmitri Nikonov
IPC分类号： G02F103
CPC分类号： G02F1/015
摘要： An optical modulator that modulates light through the semiconductor substrate through the back side of an integrated circuit die. In one embodiment, an optical modulator is disposed within a flip chip packaged integrated circuit die. The optical modulator includes a modulation region through which an optical beam is passed a plurality of times. In one embodiment, the optical beam enters through the back side of the semiconductor substrate at a first location and the modulated optical beam is deflected out through a second location on the back side of the semiconductor substrate. The interaction length of the optical modulator is increased by internally deflecting and passing the optical beam through the modulation region a plurality of times. In one embodiment, total internal reflection is used to deflect the optical beam. In another embodiment, reflective materials are used to internally deflect the optical beam. In one embodiment, the modulation region is provided with a charged region formed with a p-n junction. In another embodiment, the charged region is provided using metal-oxide-semiconductor type structures.
摘要翻译： 一种光调制器，其通过集成电路管芯的背面调制通过半导体衬底的光。 在一个实施例中，光学调制器设置在倒装芯片封装集成电路管芯内。 光调制器包括多个光束通过的调制区域。 在一个实施例中，光束在第一位置处通过半导体衬底的背面进入，并且调制的光束通过半导体衬底的背侧上的第二位置偏转出去。 光调制器的相互作用长度通过内部偏转并使光束通过调制区域多次而增加。 在一个实施例中，使用全内反射来偏转光束。 在另一个实施例中，使用反射材料来内部偏转光束。 在一个实施例中，调制区域设置有形成有p-n结的带电区域。 在另一个实施例中，使用金属氧化物半导体型结构提供带电区域。
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3.发明授权Method and apparatus for steering an optical beam in a semiconductor substrate 有权用于在半导体衬底中转向光束的方法和装置公开(公告)号：US06690036B2
公开(公告)日：2004-02-10
申请号：US09811171
申请日：2001-03-16
申请人： Ansheng Liu , Mario J. Paniccia , Michael T. Morse , Dmitri E. Nikonov , Yi Ding
发明人： Ansheng Liu , Mario J. Paniccia , Michael T. Morse , Dmitri E. Nikonov , Yi Ding
IPC分类号： H01L2724
CPC分类号： G02B6/122 , G02B6/2813 , G02F1/025 , G02F1/2955 , G02F2001/217
摘要： An optical steering method and apparatus. In one aspect of the present invention, the disclosed apparatus includes a multi-mode interference (MMI) device disposed in a semiconductor substrate. The MMI device includes an input and a plurality of outputs Each one of the plurality of outputs of the MMI device is optically coupled to the input of the MMI device. A phase array is disposed in the semiconductor substrate. The phase array includes a plurality of inputs and a plurality of outputs. The plurality of inputs of the phase array optically are coupled to the plurality of outputs of the phase array. The phase array is coupled to control relative phase differences between optical beams output by each one of the plurality of outputs of the phase array.
摘要翻译： 一种光学转向方法和装置。 在本发明的一个方面，所公开的装置包括设置在半导体衬底中的多模干涉（MMI）装置。 MMI设备包括输入和多个输出MMI设备的多个输出中的每一个光学耦合到MMI设备的输入。 相位阵列设置在半导体衬底中。 相位阵列包括多个输入和多个输出。 光学上的相位阵列的多个输入耦合到相位阵列的多个输出端。 相位阵列被耦合以控制由相位阵列的多个输出中的每一个输出的光束之间的相对相位差。
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公开(公告)号：US06650802B1
公开(公告)日：2003-11-18
申请号：US09470574
申请日：1999-12-22
IPC分类号： G02B626
摘要： A device for switching an optical beam. In one embodiment, the disclosed optical switching device includes an array of trench capacitors providing a phase array disposed between an optical input port and an optical output port in a semiconductor substrate of an integrated circuit die. In one embodiment, the trench capacitors are biased with control circuitry disposed in the semiconductor substrate on the same integrated circuit die. In one embodiment, the array of trench capacitors are biased by the control circuitry to control a charge distribution in the array to switch an optical beam passing from the optical input port through the array of trench capacitors to the optical output port. In another embodiment, there are a plurality of N optical output ports opposite the optical input port and a phase array is provided by the array of trench capacitors. The array of trench capacitors is biased to control a charge distribution across the phase array. Thus, an incident optical beam from the optical input port is selectively directed to any one of the plurality of N optical output ports. In yet another embodiment, there are a plurality of M optical input ports and corresponding phase arrays opposite the plurality of M optical output ports to provide an M×N optical switch.
摘要翻译： 一种用于切换光束的装置。 在一个实施例中，所公开的光开关器件包括沟槽电容器阵列，其提供设置在集成电路管芯的半导体衬底中的光输入端口和光输出端口之间的相位阵列。 在一个实施例中，沟槽电容器被设置在同一集成电路管芯上的半导体衬底中的控制电路偏压。 在一个实施例中，沟槽电容器阵列由控制电路偏置以控制阵列中的电荷分布，以将从光输入端口通过沟槽电容器阵列的光束切换到光输出端口。 在另一实施例中，存在与光输入端口相对的多个N个光输出端口，并且由阵列的沟槽电容器提供相位阵列。 沟槽电容器阵列被偏置以控制跨越相位阵列的电荷分布。 因此，来自光输入端口的入射光束被选择性地导向多个N个光输出端口中的任一个。 在又一实施例中，存在多个M个光输入端口和与多个M个光输出端口相对的相应的相位阵列，以提供MxN光开关。
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5.发明授权Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权锗/硅雪崩光电探测器，具有单独的吸收和乘法区域公开(公告)号：US08829566B2
公开(公告)日：2014-09-09
申请号：US11724805
申请日：2007-03-15
IPC分类号： H01L31/107 , H01L31/18 , H01L31/028 , H01L31/0312
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。
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6.发明授权Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权锗/硅雪崩光电探测器，具有单独的吸收和乘法区域公开(公告)号：US08338857B2
公开(公告)日：2012-12-25
申请号：US12870811
申请日：2010-08-28
IPC分类号： H01L31/028 , H01L31/0352
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。
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7.发明申请GERMANIUM/SILICON AVALANCHE PHOTODETECTOR WITH SEPARATE ABSORPTION AND MULTIPLICATION REGIONS 有权具有单独吸收和多样化区域的锗/硅玻璃光电转换器公开(公告)号：US20100320502A1
公开(公告)日：2010-12-23
申请号：US12870811
申请日：2010-08-28
IPC分类号： H01L31/107
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。
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8.发明授权Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权锗/硅雪崩光电探测器，具有单独的吸收和乘法区域公开(公告)号：US07233051B2
公开(公告)日：2007-06-19
申请号：US11170556
申请日：2005-06-28
IPC分类号： H01L31/107
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。
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9.发明授权Method and apparatus for steering an optical beam in a semiconductor substrate 失效用于在半导体衬底中转向光束的方法和装置公开(公告)号：US06891653B2
公开(公告)日：2005-05-10
申请号：US10177872
申请日：2002-06-19
申请人： Ansheng Liu , Mario J. Paniccia , Michael T. Morse , Dmitri E. Nikonov , Yi Ding
发明人： Ansheng Liu , Mario J. Paniccia , Michael T. Morse , Dmitri E. Nikonov , Yi Ding
CPC分类号： G02B6/122 , G02B6/2813 , G02F1/025 , G02F1/2955 , G02F2001/217
摘要： An optical steering method and apparatus. In one aspect of the present invention, the disclosed apparatus includes a multi-mode interference (MMI) device disposed in a semiconductor substrate. The MMI device includes an input and a plurality of outputs. Each one of the plurality of outputs of the MMI device is optically coupled to the input of the MMI device. A phase array is disposed in the semiconductor substrate. The phase array includes a plurality of inputs and a plurality of outputs. The plurality of inputs of the phase array optically are coupled to the plurality of outputs of the phase array. The phase array is coupled to control relative phase differences between optical beams output by each one of the plurality of outputs of the phase array.
摘要翻译： 一种光学转向方法和装置。 在本发明的一个方面，所公开的装置包括设置在半导体衬底中的多模干涉（MMI）装置。 MMI设备包括输入和多个输出。 MMI设备的多个输出中的每一个光耦合到MMI设备的输入。 相位阵列设置在半导体衬底中。 相位阵列包括多个输入和多个输出。 光学上的相位阵列的多个输入耦合到相位阵列的多个输出端。 相位阵列被耦合以控制由相位阵列的多个输出中的每一个输出的光束之间的相对相位差。
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公开(公告)号：US08278741B2
公开(公告)日：2012-10-02
申请号：US12495665
申请日：2009-06-30
IPC分类号： H01L31/105
CPC分类号： G02B6/12004 , G02B6/12007 , G02B6/124 , G02B6/132 , G02B6/4202 , G02B6/4215 , G02B2006/12061 , G02B2006/12123 , H01L31/035272 , H01L31/105
摘要： Sidewall photodetectors for integrated photonic devices and their method of manufacture. An embodiment includes a p-i-n film stack formed on a sidewall of a substrate semiconductor feature having sufficiently large area to accommodate the spot size of a multi-mode fiber. An embodiment includes a first sidewall photodetector coupled to a second sidewall photodetector by a waveguide, the first sidewall photodetector having an i-layer tuned to absorb a first wavelength of light incident to the first sidewall and pass a second wavelength of light to the second sidewall photodetector having an i-layer tuned to absorb the second wavelength.
摘要翻译： 集成光子器件的侧壁光电探测器及其制造方法。 实施例包括形成在具有足够大的面积以容纳多模光纤的光点尺寸的衬底半导体特征的侧壁上的p-i-n膜堆叠。 一个实施例包括通过波导耦合到第二侧壁光电检测器的第一侧壁光电检测器，第一侧壁光电检测器具有被调谐以吸收入射到第一侧壁的第一波长的光并将第二波长的光传递到第二侧壁的i层 具有被调谐以吸收第二波长的i层的光电检测器。
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