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公开(公告)号：US5455432A
公开(公告)日：1995-10-03
申请号：US321164
申请日：1994-10-11
CPC分类号： H01L29/1602 , H01L29/1054 , H01L29/765 , H01L29/802 , H01L2924/0002
摘要： A diamond semiconductor device with a carbide interlayer includes a diamond layer having a semiconducting diamond region of first conductivity type therein and an insulated gate structure on a face of the diamond layer. The relatively thin carbide interfacial layer is provided between the insulated gate structure and the diamond layer in order to inhibit the formation of electrically active defects, such as interface states at the face. By inhibiting the formation of interface states at the face, the carbide interfacial layer suppresses parasitic leakage of charge carriers from the diamond layer to the insulated gate structure. The carbide interfacial layer can be intrinsic silicon carbide or an intrinsic refractory metal carbide (e.g., TiC or WC) or the layer can be of opposite conductivity type to thereby form a P--N heterojunction with the diamond layer. The carbide interfacial layer and the insulated gate structure can be used in a variety of diamond electronic devices such as MIS capacitors, enhancement-mode and buried-channel insulated-gate field effect transistors (IGFETs), surface-channel and buried-channel charge-coupled devices (CCDs), detectors, heterojunction devices, and other related field effect devices. Related fabrication methods are also disclosed.
摘要翻译： 具有碳化物中间层的金刚石半导体器件包括其中具有第一导电类型的半导体金刚石区域的金刚石层和在金刚石层的表面上的绝缘栅极结构。 在绝缘栅极结构和金刚石层之间提供相对薄的碳化物界面层，以便抑制电活性缺陷（例如在表面处的界面态）的形成。 通过抑制表面界面态的形成，碳化物界面层抑制电荷载体从金刚石层到绝缘栅极结构的寄生泄漏。 碳化物界面层可以是本征碳化硅或本征难熔金属碳化物（例如TiC或WC），或者该层可以具有相反的导电类型，从而与金刚石层形成P-N异质结。 碳化物界面层和绝缘栅结构可用于各种金刚石电子器件，如MIS电容器，增强型和埋沟通道绝缘栅场效应晶体管（IGFET），表面沟道和掩埋沟道电荷 - 耦合器件（CCD），检测器，异质结器件和其他相关的场效应器件。 还公开了相关的制造方法。
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2.发明授权
公开(公告)号：US5536953A
公开(公告)日：1996-07-16
申请号：US208018
申请日：1994-03-08
IPC分类号： H01L29/10 , H01L29/167 , H01L29/786 , H01L31/103 , H01L33/02 , H01L31/0312 , H01L29/82
CPC分类号： H01L33/025 , H01L29/1029 , H01L29/1058 , H01L29/167 , H01L29/78684 , H01L31/103
摘要： A semiconductor device for providing stable operation over a relatively wide temperature range includes a wide bandgap semiconductor active region having an intentional dopant of a first conductivity type and an unintentional impurity of a second conductivity type which together produce a free carrier concentration at room temperature. The concentration of the intentional dopant in the active region is preferably less than 1.times.10.sup.16 cm.sup.-3 and the concentration of the unintentional impurity is less than 0.1 times the intentional dopant concentration so that the intentional dopant concentration will be less than 1000 times the free carrier concentration at room temperature. The intentional dopant concentration supplies substantially all the majority free carriers in the active region. The wide bandgap semiconductor active region is preferably diamond, IV-IV carbides, III-V nitrides and phosphides and II-VI selenides, tellurides, oxides and sulfides. By lightly doping the active region to a level below 1.times.10.sup.16 cm.sup.-3, relatively uniform device characteristics can be achieved over a wide temperature range extending from room temperature to 1000 K and above.
摘要翻译： 用于在相当宽的温度范围内提供稳定操作的半导体器件包括宽带隙半导体有源区，其具有第一导电类型的有意掺杂物和第二导电类型的无意杂质，其共同在室温下产生游离载流子浓度。 有源区域中的有意掺杂剂的浓度优选小于1×10 16 cm -3，并且非故意杂质的浓度小于有意掺杂剂浓度的0.1倍，使得有意掺杂剂浓度将小于自由载流子浓度的1000倍 在室温下。 有意掺杂剂浓度基本上供应活性区域中所有主要的自由载体。 宽带隙半导体活性区域优选为金刚石，IV-IV碳化物，III-V族氮化物和磷化物以及II-VI族硒化物，碲化物，氧化物和硫化物。 通过将有源区轻轻掺杂到1×1016cm-3以下的水平，可以在从室温延伸到1000K以上的宽的温度范围内实现相对均匀的器件特性。
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3.发明授权Surface acoustic wave and bulk acoustic wave devices using a Zn.sub.(1-X) Y.sub.x O piezoelectric layer device 失效表面声波和使用Zn（1-X）YxO压电层器件的体声波器件
公开(公告)号：US6127768A
公开(公告)日：2000-10-03
申请号：US73995
申请日：1998-05-07
CPC分类号： H03H9/02582 , H03H9/02574 , H03H9/02834
摘要： The SAW device comprises a diamond or quartz substrate as a wave propagation layer, a piezoelectric layer on the wave propagation layer and at least one interdigitated electrode on the piezoelectric layer.
摘要翻译： SAW器件包括作为波传播层的金刚石或石英衬底，波传播层上的压电层和压电层上的至少一个叉指电极。
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4.发明授权Magnetic sensor element using highly-oriented diamond film and magnetic detector 失效磁性传感元件采用高取向金刚石膜和磁性探测器
公开(公告)号：US5424561A
公开(公告)日：1995-06-13
申请号：US305791
申请日：1994-09-08
申请人： Takeshi Tachibana , Kazushi Hayashi , Koji Kobashi , Bradley A. Fox , Jesko A. von Windheim , David L. Dreifus , Brian R. Stoner
发明人： Takeshi Tachibana , Kazushi Hayashi , Koji Kobashi , Bradley A. Fox , Jesko A. von Windheim , David L. Dreifus , Brian R. Stoner
IPC分类号： G01R33/07 , C30B25/02 , C30B29/04 , H01L43/06 , H01L43/10 , H01L27/22 , H01L29/82 , H01L43/00
CPC分类号： H01L43/065
摘要： A magnetic sensor element using highly-oriented diamond film comprises a magnetic detecting part, at least a pair of main current electrodes for flowing a main current and generating the Hall electromotive force at the magnetic detecting part, and detection electrodes for detecting said Hall electromotive force. Said magnetic detecting part is formed of a highly-oriented diamond film grown by chemical vapor deposition, at least 90% of which consists of either (100) or (111) crystal planes. Between the adjacent crystal planes, the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles {.alpha., .beta., .gamma.} which represent the orientation of the crystal planes, satisfy the following relations simultaneously: .vertline..DELTA..alpha..vertline..ltoreq.10.degree., .vertline..DELTA..beta..vertline..ltoreq.10.degree. and .vertline..DELTA..gamma..vertline..ltoreq.10 .degree.. The magnetic sensor element using highly-oriented diamond film has a high heat stability and sufficiently high level of magnetic field sensitivity to be used practically, enabling to expand the surface area and to increase the integration of the element and to measure magnetic field over a wide area and a large space.
摘要翻译： 使用高取向金刚石膜的磁传感器元件包括磁检测部，至少一对主电流电极，用于使主电流流动并在磁检测部产生霍尔电动势，以及检测电极，用于检测所述霍尔电动势 。 所述磁检测部分由化学气相沉积生长的高取向金刚石膜形成，其中至少90％由（100）或（111）晶面构成。 在相邻的晶面之间，表示晶面取向的欧拉角{α，β，γ}的差异{DELTA alpha，DELTAβ，DELTA gamma}同时满足以下关系： DELTA alpha |
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公开(公告)号：US5592053A
公开(公告)日：1997-01-07
申请号：US349794
申请日：1994-12-06
申请人： Bradley A. Fox , Jeffrey T. Glass , David L. Driefus , Luka Lojk
发明人： Bradley A. Fox , Jeffrey T. Glass , David L. Driefus , Luka Lojk
CPC分类号： H03F3/54 , H01J1/02 , H01J19/32 , H01J21/105 , H01J3/022
摘要： An electron beam device includes a diamond layer positioned downstream from and in the path of an electron beam. This diamond layer has a conductance that is responsive to the electron beam. Two electrical contacts on the diamond layer provide connections to a power source and a load. When the electron beam is on, the diamond layer becomes conductive allowing electrical power to flow from the power source through the diamond layer to the load. Accordingly, the electron beam device can act as a switch, or the electron beam can be modulated to provide an amplifier. The diamond layer is capable of high temperature operation, resists crystal damage, resists corrosion, and provides a high breakdown voltage. At least one of the electrical contacts on the diamond layer preferably comprises a degeneratively doped diamond surface portion. The degeneratively doped diamond surface portion is relatively transparent to the electron beam, has a coefficient of thermal expansion that is matched with the diamond layer, and resists damage caused by the electron beam.
摘要翻译： 电子束装置包括位于电子束的下游和路径中的金刚石层。 该金刚石层具有响应于电子束的电导。 金刚石层上的两个电触点提供与电源和负载的连接。 当电子束打开时，金刚石层变得导电，允许电力从电源通过金刚石层流到负载。 因此，电子束装置可以用作开关，或者可以调制电子束以提供放大器。 金刚石层能够进行高温操作，抵抗晶体损伤，抵抗腐蚀，并提供高击穿电压。 金刚石层上的至少一个电触点优选地包括退化掺杂的金刚石表面部分。 退化掺杂的金刚石表面部分对于电子束是相对透明的，具有与金刚石层匹配的热膨胀系数，并且抵抗由电子束引起的损伤。
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