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公开(公告)号：US5455432A
公开(公告)日：1995-10-03
申请号：US321164
申请日：1994-10-11
CPC分类号： H01L29/1602 , H01L29/1054 , H01L29/765 , H01L29/802 , H01L2924/0002
摘要： A diamond semiconductor device with a carbide interlayer includes a diamond layer having a semiconducting diamond region of first conductivity type therein and an insulated gate structure on a face of the diamond layer. The relatively thin carbide interfacial layer is provided between the insulated gate structure and the diamond layer in order to inhibit the formation of electrically active defects, such as interface states at the face. By inhibiting the formation of interface states at the face, the carbide interfacial layer suppresses parasitic leakage of charge carriers from the diamond layer to the insulated gate structure. The carbide interfacial layer can be intrinsic silicon carbide or an intrinsic refractory metal carbide (e.g., TiC or WC) or the layer can be of opposite conductivity type to thereby form a P--N heterojunction with the diamond layer. The carbide interfacial layer and the insulated gate structure can be used in a variety of diamond electronic devices such as MIS capacitors, enhancement-mode and buried-channel insulated-gate field effect transistors (IGFETs), surface-channel and buried-channel charge-coupled devices (CCDs), detectors, heterojunction devices, and other related field effect devices. Related fabrication methods are also disclosed.
摘要翻译： 具有碳化物中间层的金刚石半导体器件包括其中具有第一导电类型的半导体金刚石区域的金刚石层和在金刚石层的表面上的绝缘栅极结构。 在绝缘栅极结构和金刚石层之间提供相对薄的碳化物界面层，以便抑制电活性缺陷（例如在表面处的界面态）的形成。 通过抑制表面界面态的形成，碳化物界面层抑制电荷载体从金刚石层到绝缘栅极结构的寄生泄漏。 碳化物界面层可以是本征碳化硅或本征难熔金属碳化物（例如TiC或WC），或者该层可以具有相反的导电类型，从而与金刚石层形成P-N异质结。 碳化物界面层和绝缘栅结构可用于各种金刚石电子器件，如MIS电容器，增强型和埋沟通道绝缘栅场效应晶体管（IGFET），表面沟道和掩埋沟道电荷 - 耦合器件（CCD），检测器，异质结器件和其他相关的场效应器件。 还公开了相关的制造方法。
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公开(公告)号：US5506422A
公开(公告)日：1996-04-09
申请号：US348485
申请日：1994-12-02
IPC分类号： C30B29/04 , H01L21/04 , H01L29/10 , H01L29/16 , H01L29/78 , H01L29/786 , H01L31/0312
CPC分类号： H01L29/1602 , H01L29/1079 , H01L29/66045 , H01L29/78 , Y10T428/30
摘要： A junction suitable for incorporation in diamond electronic devices, such as field effect transistors, U-V photodetectors, capacitors, charge-coupled devices, etc., comprising a double layer structure deposited on the semiconducting diamond film of the electronic device, wherein the double layer structure consists of a layer of intrinsic diamond and a layer of a carrier blocking material. The carrier blocking materials is characterized by a band structure discontinuous with that of diamond resulting in the formation of a depletion layer at the interface. A contact is then formed on this double layer structure.
摘要翻译： 包括沉积在电子器件的半导体金刚石膜上的双层结构的金刚石电子器件中诸如场效应晶体管，紫外光电检测器，电容器，电荷耦合器件等的接合点，其中双层结构 由一层本征金刚石和一层载体阻挡材料组成。 载体阻挡材料的特征在于与金刚石不同的带结构，其特征在于在界面处形成耗尽层。 然后在该双层结构上形成接触。
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公开(公告)号：US5652436A
公开(公告)日：1997-07-29
申请号：US514656
申请日：1995-08-14
申请人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
发明人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
IPC分类号： H01L21/20 , H03H3/08 , H03H9/02 , H01L31/0312
CPC分类号： H01L21/2007 , H03H3/08 , H03H9/02582
摘要： A diamond-based structure includes a substrate, an adhesive material on a face of the substrate, and an array of spaced apart diamond mesas bonded to the substrate by the adhesive material. In particular, each of the diamond mesas can have a growth surface adjacent the substrate and an interfacial surface opposite the substrate, and the interfacial surface can be smooth relative to the growth surface. This structure can be fabricated by providing a sacrificial substrate, forming a plurality of diamond mesas on a face of the sacrificial substrate, bonding the diamond mesas to a transfer substrate, and removing the sacrificial substrate. Accordingly, the interfacial surfaces of the diamond, which are formed adjacent the sacrificial substrate and then exposed by removing the substrate are smooth.
摘要翻译： 基于金刚石的结构包括基底，在基底的表面上的粘合剂材料以及通过粘合剂材料结合到基底上的间隔开的金刚石台面阵列。 特别地，每个金刚石台面可以具有邻近基底的生长表面和与基底相对的界面，并且界面表面相对于生长表面可以是平滑的。 可以通过提供牺牲衬底，在牺牲衬底的表面上形成多个金刚石台面，将金刚石台面结合到转移衬底以及去除牺牲衬底来制造该结构。 因此，与牺牲衬底相邻形成然后通过去除衬底而暴露的金刚石的界面表面是光滑的。
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公开(公告)号：US5576589A
公开(公告)日：1996-11-19
申请号：US322710
申请日：1994-10-13
IPC分类号： G01N29/00 , H01L41/09 , H03H3/02 , H03H3/08 , H03H9/02 , H03H9/17 , H03H9/25 , H03H9/42 , H03H9/72 , H03H9/145 , H01L41/18
CPC分类号： H03H9/02582 , H03H9/0285
摘要： A high frequency Surface Acoustic Wave (SAW) device includes a highly oriented diamond layer adjacent a piezoelectric layer. In one embodiment, laterally spaced apart piezoelectric layers or portions confine propagation of the wave within the diamond layer. Interdigitated electrodes may be provided by electrically conductive metal lines and/or by heavily doped surface portions of the diamond layer. Undesirable reflections may be reduced by providing the piezoelectric layer with opposing ends canted at an angle from orthogonal to the axis of surface acoustic wave propagation. The surface acoustic wave device may be used as a filter, amplifier, convolver, and phase shifter. Methods for making the surface acoustic wave device are also disclosed.
摘要翻译： 高频表面声波（SAW）器件包括邻近压电层的高取向金刚石层。 在一个实施例中，横向间隔开的压电层或部分限制波在金刚石层内的传播。 交叉电极可以由导电金属线和/或通过金刚石层的重掺杂表面部分提供。 可以通过提供具有与正交于表面声波传播的轴线成正角的相对端部的压电层来降低不期望的反射。 声表面波器件可以用作滤波器，放大器，卷积器和移相器。 还公开了制造声表面波装置的方法。
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公开(公告)号：US5672240A
公开(公告)日：1997-09-30
申请号：US658467
申请日：1996-06-05
申请人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
发明人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
CPC分类号： H01L21/2007 , H03H3/08 , H03H9/02582
摘要： A diamond-based structure includes a substrate, an adhesive material on a face of the substrate, and an array of spaced apart diamond mesas bonded to the substrate by the adhesive material. In particular, each of the diamond mesas can have a growth surface adjacent the substrate and an interfacial surface opposite the substrate, and the interfacial surface can be smooth relative to the growth surface. This structure can be fabricated by providing a sacrificial substrate, forming a plurality of diamond mesas on a face of the sacrificial substrate, bonding the diamond mesas to a transfer substrate, and removing the sacrificial substrate. Accordingly, the interfacial surfaces of the diamond, which are formed adjacent the sacrificial substrate and then exposed by removing the substrate are smooth.
摘要翻译： 基于金刚石的结构包括基底，在基底的表面上的粘合剂材料以及通过粘合剂材料结合到基底上的间隔开的金刚石台面阵列。 特别地，每个金刚石台面可以具有邻近基底的生长表面和与基底相对的界面，并且界面表面相对于生长表面可以是平滑的。 可以通过提供牺牲衬底，在牺牲衬底的表面上形成多个金刚石台面，将金刚石台面结合到转移衬底以及去除牺牲衬底来制造该结构。 因此，与牺牲衬底相邻形成然后通过去除衬底而暴露的金刚石的界面表面是光滑的。
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6.发明授权Magnetic sensor element using highly-oriented diamond film and magnetic detector 失效磁性传感元件采用高取向金刚石膜和磁性探测器
公开(公告)号：US5424561A
公开(公告)日：1995-06-13
申请号：US305791
申请日：1994-09-08
申请人： Takeshi Tachibana , Kazushi Hayashi , Koji Kobashi , Bradley A. Fox , Jesko A. von Windheim , David L. Dreifus , Brian R. Stoner
发明人： Takeshi Tachibana , Kazushi Hayashi , Koji Kobashi , Bradley A. Fox , Jesko A. von Windheim , David L. Dreifus , Brian R. Stoner
IPC分类号： G01R33/07 , C30B25/02 , C30B29/04 , H01L43/06 , H01L43/10 , H01L27/22 , H01L29/82 , H01L43/00
CPC分类号： H01L43/065
摘要： A magnetic sensor element using highly-oriented diamond film comprises a magnetic detecting part, at least a pair of main current electrodes for flowing a main current and generating the Hall electromotive force at the magnetic detecting part, and detection electrodes for detecting said Hall electromotive force. Said magnetic detecting part is formed of a highly-oriented diamond film grown by chemical vapor deposition, at least 90% of which consists of either (100) or (111) crystal planes. Between the adjacent crystal planes, the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles {.alpha., .beta., .gamma.} which represent the orientation of the crystal planes, satisfy the following relations simultaneously: .vertline..DELTA..alpha..vertline..ltoreq.10.degree., .vertline..DELTA..beta..vertline..ltoreq.10.degree. and .vertline..DELTA..gamma..vertline..ltoreq.10 .degree.. The magnetic sensor element using highly-oriented diamond film has a high heat stability and sufficiently high level of magnetic field sensitivity to be used practically, enabling to expand the surface area and to increase the integration of the element and to measure magnetic field over a wide area and a large space.
摘要翻译： 使用高取向金刚石膜的磁传感器元件包括磁检测部，至少一对主电流电极，用于使主电流流动并在磁检测部产生霍尔电动势，以及检测电极，用于检测所述霍尔电动势 。 所述磁检测部分由化学气相沉积生长的高取向金刚石膜形成，其中至少90％由（100）或（111）晶面构成。 在相邻的晶面之间，表示晶面取向的欧拉角{α，β，γ}的差异{DELTA alpha，DELTAβ，DELTA gamma}同时满足以下关系： DELTA alpha |
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7.发明授权
公开(公告)号：US5536953A
公开(公告)日：1996-07-16
申请号：US208018
申请日：1994-03-08
IPC分类号： H01L29/10 , H01L29/167 , H01L29/786 , H01L31/103 , H01L33/02 , H01L31/0312 , H01L29/82
CPC分类号： H01L33/025 , H01L29/1029 , H01L29/1058 , H01L29/167 , H01L29/78684 , H01L31/103
摘要： A semiconductor device for providing stable operation over a relatively wide temperature range includes a wide bandgap semiconductor active region having an intentional dopant of a first conductivity type and an unintentional impurity of a second conductivity type which together produce a free carrier concentration at room temperature. The concentration of the intentional dopant in the active region is preferably less than 1.times.10.sup.16 cm.sup.-3 and the concentration of the unintentional impurity is less than 0.1 times the intentional dopant concentration so that the intentional dopant concentration will be less than 1000 times the free carrier concentration at room temperature. The intentional dopant concentration supplies substantially all the majority free carriers in the active region. The wide bandgap semiconductor active region is preferably diamond, IV-IV carbides, III-V nitrides and phosphides and II-VI selenides, tellurides, oxides and sulfides. By lightly doping the active region to a level below 1.times.10.sup.16 cm.sup.-3, relatively uniform device characteristics can be achieved over a wide temperature range extending from room temperature to 1000 K and above.
摘要翻译： 用于在相当宽的温度范围内提供稳定操作的半导体器件包括宽带隙半导体有源区，其具有第一导电类型的有意掺杂物和第二导电类型的无意杂质，其共同在室温下产生游离载流子浓度。 有源区域中的有意掺杂剂的浓度优选小于1×10 16 cm -3，并且非故意杂质的浓度小于有意掺杂剂浓度的0.1倍，使得有意掺杂剂浓度将小于自由载流子浓度的1000倍 在室温下。 有意掺杂剂浓度基本上供应活性区域中所有主要的自由载体。 宽带隙半导体活性区域优选为金刚石，IV-IV碳化物，III-V族氮化物和磷化物以及II-VI族硒化物，碲化物，氧化物和硫化物。 通过将有源区轻轻掺杂到1×1016cm-3以下的水平，可以在从室温延伸到1000K以上的宽的温度范围内实现相对均匀的器件特性。
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8.发明授权Surface acoustic wave and bulk acoustic wave devices using a Zn.sub.(1-X) Y.sub.x O piezoelectric layer device 失效表面声波和使用Zn（1-X）YxO压电层器件的体声波器件
公开(公告)号：US6127768A
公开(公告)日：2000-10-03
申请号：US73995
申请日：1998-05-07
CPC分类号： H03H9/02582 , H03H9/02574 , H03H9/02834
摘要： The SAW device comprises a diamond or quartz substrate as a wave propagation layer, a piezoelectric layer on the wave propagation layer and at least one interdigitated electrode on the piezoelectric layer.
摘要翻译： SAW器件包括作为波传播层的金刚石或石英衬底，波传播层上的压电层和压电层上的至少一个叉指电极。
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9.发明申请公开(公告)号：US20100306580A1
公开(公告)日：2010-12-02
申请号：US12473437
申请日：2009-05-28
CPC分类号： G06F12/0246 , G06F2212/1036 , G11C16/349 , G11C29/76
摘要： Various embodiments of the present invention provide systems and methods for data storage. As an example, storage devices are disclosed that include a plurality of memory blocks, an unreliable block identification circuit, and a partial failure indication circuit. Each of the plurality of memory blocks includes a plurality of memory cells that decrease in reliability over time as they are accessed. The unreliable block identification circuit is operable to determine that one or more of the plurality of memory blocks is unreliable, and the partial failure indication circuit is operable to disallow write access to the plurality of memory blocks upon determination that an insufficient number of the plurality of memory blocks remain reliable.
摘要翻译： 本发明的各种实施例提供用于数据存储的系统和方法。 作为示例，公开了包括多个存储块，不可靠块识别电路和部分故障指示电路的存储设备。 多个存储块中的每一个包括多个存储单元，随着访问时存储单元的可靠性随着时间的推移而降低。 所述不可靠块识别电路可操作以确定所述多个存储器块中的一个或多个不可靠，并且所述部分故障指示电路可操作以在确定所述多个存储块中的数量不足的情况下不允许对所述多个存储器块的写入访问 内存块保持可靠。
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公开(公告)号：US5491348A
公开(公告)日：1996-02-13
申请号：US313986
申请日：1994-09-28
IPC分类号： H01L21/314 , H01L21/338 , H01L29/04 , H01L29/16 , H01L29/812
CPC分类号： H01L29/1602 , H01L29/045 , H01L29/812
摘要： A source electrode is formed on the first semiconducting diamond film and a drain electrode is formed on the second semiconducting diamond film. A highly resistant diamond film having a thickness of between 10 .ANG. and 1 mm and an electrical resistance of at least 10.sup.2 .OMEGA..cm or more is placed between the first and second semiconducting diamond films. A gate electrode is formed on the highly resistant diamond film. Thereby, a channel region is formed by these first and second semiconducting diamond films as well as the highly resistant diamond film. All or at least a part of said first and second semiconducting diamond films and the highly resistant diamond film are made of highly-oriented diamond films where either (100) or (111) crystal planes of diamond cover at least 80% of the film surface, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.} which represent the crystal plane orientation, satisfy .vertline..DELTA..alpha..vertline.
摘要翻译： 在第一半导体金刚石膜上形成源电极，在第二半导体金刚石膜上形成漏电极。 在第一和第二半导体金刚石膜之间放置厚度在10埃至1毫米至10欧姆或更大的电阻之间的高度耐磨的金刚石薄膜。 在耐高压金刚石膜上形成栅电极。 因此，通过这些第一和第二半导体金刚石膜以及高度耐磨的金刚石膜形成沟道区。 所述第一和第二半导体金刚石膜的全部或至少一部分和高度耐金刚石膜由高取向金刚石膜制成，金刚石的（100）或（111）晶面覆盖至少80％的膜表面 ，并且表示晶面取向的欧拉角{α，β，γ}的差异{DELTAα，DELTAβ，DELTAγ}满足| DELTAα| <10°，| DELTA beta | <10°，| DELTA gamma | <10°，同时在相邻的晶面之间。
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