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公开(公告)号：US09305803B2
公开(公告)日：2016-04-05
申请号：US13185598
申请日：2011-07-19
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01L21/311 , H01L21/67 , H01J37/32 , H01L21/66 , H01L21/3065 , H01L21/762
CPC分类号： H01L21/67069 , H01J37/32146 , H01J37/32192 , H01J37/32935 , H01J2237/3348 , H01L21/3065 , H01L21/31116 , H01L21/76232 , H01L22/10
摘要： Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus.A plasma processing apparatus includes: a vacuum vessel; a plasma generating section plasma in the vacuum vessel; a stage installed in the vacuum vessel and mounted with a sample; and a radio-frequency power supply applying temporally modulated intermittent radio-frequency power to the stage, wherein the radio-frequency power supply has two or more different frequency bands and temporally modulates the radio-frequency power by a repetition frequency which has the same range of analog signals used in each of the frequency band.
摘要翻译： 提供一种等离子体处理装置，其具有提供可在宽重复频带中高精度地控制的时间调制的间歇射频功率的射频电源，以及使用等离子体处理装置的等离子体处理方法。 一种等离子体处理装置，包括：真空容器; 真空容器中的等离子体产生部等离子体; 安装在真空容器中并安装有样品的阶段; 以及向所述载波台施加临时调制的间歇射频功率的射频电源，其中，所述射频电源具有两个以上的不同频带，并且通过具有相同范围的重复频率对所述射频功率进行时间调制 在每个频带中使用的模拟信号。
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公开(公告)号：US08580131B2
公开(公告)日：2013-11-12
申请号：US13363488
申请日：2012-02-01
CPC分类号： H01L21/31116
摘要： It is an object of the present invention to provide a plasma etching method that can improve a selection ratio of a film to be etched to a film different from the film to be etched than that in the related art. The present invention provides a plasma etching method for selectively etching a film to be etched with respect to another film different from the film to be etched, the plasma etching method including etching, using gas that can generate a deposited film containing components same as components of the another film different from the film to be etched, the film on which generation of the deposited film is suppressed.
摘要翻译： 本发明的目的是提供一种等离子体蚀刻方法，其可以提高与要蚀刻的膜相比不同于待蚀刻的膜的膜的选择比，而不是现有技术。 本发明提供了一种等离子体蚀刻方法，用于相对于不同于待蚀刻的膜的另一膜选择性地蚀刻待蚀刻的膜，该等离子体蚀刻方法包括蚀刻，使用可产生含有与 与被蚀刻的膜不同的另一膜，抑制了沉积膜的一代的膜。
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公开(公告)号：US08801951B2
公开(公告)日：2014-08-12
申请号：US13210490
申请日：2011-08-16
申请人： Yoshiharu Inoue , Michikazu Morimoto , Tsuyoshi Matsumoto , Tetsuo Ono , Tadamitsu Kanekiyo , Mamoru Yakushiji , Masakazu Miyaji
发明人： Yoshiharu Inoue , Michikazu Morimoto , Tsuyoshi Matsumoto , Tetsuo Ono , Tadamitsu Kanekiyo , Mamoru Yakushiji , Masakazu Miyaji
IPC分类号： C03C15/00
CPC分类号： H01L21/31116
摘要： In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied, the object to be processed is etched under etching conditions that a deposit film on an inner wall of the processing chamber becomes amorphous by repeating a first period during which the object to be processed is exposed to plasma and a second period during which the object to be processed is exposed to plasma and an etching rate is lower as compared with the first period. Consequently, particles due to increase in the number of processed sheets of the object to be processed can be suppressed.
摘要翻译： 在等离子体处理方法中，通过在施加射频电力的状态下，通过从引入到处理室中的沉积气体产生等离子体并将待处理物体暴露于等离子体，对待处理对象进行蚀刻， 在处理室的内壁上的沉积膜通过重复将被处理物暴露于等离子体的第一期间和第二期间，使被处理室的暴露于 等离子体和蚀刻速率比第一阶段低。 因此，能够抑制由于加工对象物的加工张数而增加的粒子。
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公开(公告)号：US08828254B2
公开(公告)日：2014-09-09
申请号：US13363415
申请日：2012-02-01
IPC分类号： C03C15/00 , H01L21/3213 , H01J37/32
CPC分类号： H01J37/32266 , H01J37/32192 , H01J37/3266 , H01J37/32935 , H01J2237/2485 , H01J2237/334 , H01L21/3065 , H01L21/32137 , H01L21/67069 , H01L22/26
摘要： A plasma processing method and a plasma processing apparatus in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.
摘要翻译： 一种等离子体处理方法和等离子体处理装置，其中可以从低微波功率到高微波功率的宽范围内确保稳定的处理区域。 等离子体处理方法包括通过连续放电难以制造等离子体的区域以及通过所产生的等离子体等离子体处理被处理物的区域容易地制造等离子体，其中通过脉冲放电产生等离子体，其中ON 和OFF），在ON期间产生脉冲放电的射频功率是通过连续放电促进等离子体生产的功率，并且控制脉冲放电的占空比使得无线电的平均功率 每个循环的频率功率是在难以通过连续放电产生等离子体的区域中的功率。
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公开(公告)号：US20130109184A1
公开(公告)日：2013-05-02
申请号：US13363488
申请日：2012-02-01
IPC分类号： H01L21/306
CPC分类号： H01L21/31116
摘要： It is an object of the present invention to provide a plasma etching method that can improve a selection ratio of a film to be etched to a film different from the film to be etched than that in the related art. The present invention provides a plasma etching method for selectively etching a film to be etched with respect to another film different from the film to be etched, the plasma etching method including etching, using gas that can generate a deposited film containing components same as components of the another film different from the film to be etched, the film on which generation of the deposited film is suppressed.
摘要翻译： 本发明的目的是提供一种等离子体蚀刻方法，其可以提高与要蚀刻的膜相比不同于待蚀刻的膜的膜的选择比，而不是现有技术。 本发明提供了一种等离子体蚀刻方法，用于相对于不同于待蚀刻的膜的另一膜选择性地蚀刻待蚀刻的膜，该等离子体蚀刻方法包括蚀刻，使用可产生含有与 与被蚀刻的膜不同的另一膜，抑制了沉积膜的一代的膜。
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公开(公告)号：US20120003838A1
公开(公告)日：2012-01-05
申请号：US12855265
申请日：2010-08-12
IPC分类号： H01L21/308 , H01L21/3065
CPC分类号： H01L21/31144 , H01L21/31116 , H01L21/31138
摘要： Line-wiggling and striation caused by collapse of a pattern after a silicon dioxide film is etched by plasma with the use of a multilayer resist mask are prevented or suppressed. In a plasma etching method of etching a film to be etched by plasma with the use of a multilayer resist mask, the multilayer resist mask includes an upper layer resist, an inorganic intermediate film, and a lower layer resist, and the method includes a side wall protective film forming step of forming a side wall protective film on a side wall of the lower layer resist.
摘要翻译： 防止或抑制通过使用多层抗蚀剂掩模通过等离子体蚀刻二氧化硅膜之后的图案的塌陷引起的线条摆动和条纹。 在使用多层抗蚀剂掩模蚀刻由等离子体蚀刻的膜的等离子体蚀刻方法中，多层抗蚀剂掩模包括上层抗蚀剂，无机中间膜和下层抗蚀剂，该方法包括侧面 在下层抗蚀剂的侧壁上形成侧壁保护膜的壁保护膜形成工序。
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