公开(公告)号：US20150108002A1

公开(公告)日：2015-04-23

申请号：US14572472

申请日：2014-12-16

Applicant: Microfabrica Inc.

Inventor： Kieun Kim ,  Adam L. Cohen ,  Willa M. Larsen ,  Richard Chen ,  Ananda H. Kumar ,  Ezekiel J.J. Kruglick ,  Vacit Arat ,  Gang Zhang ,  Michael S. Lockard ,  Christopher A. Bang ,  Jeffrey A. Thompson

IPC: C25D5/02 ,  C25D7/00

CPC classification number: C25D1/003

Abstract: Embodiments of the present invention are directed to the formation of microprobe tips elements having a variety of configurations. In some embodiments tips are formed from the same building material as the probes themselves, while in other embodiments the tips may be formed from a different material and/or may include a coating material. In some embodiments, the tips are formed before the main portions of the probes and the tips are formed in proximity to or in contact with a temporary substrate. Probe tip patterning may occur in a variety of different ways, including, for example, via molding in patterned holes that have been isotropically or anisotropically etched silicon, via molding in voids formed in exposed photoresist, via molding in voids in a sacrificial material that have formed as a result of the sacrificial material mushrooming over carefully sized and located regions of dielectric material, via isotropic etching of the tip material around carefully sized and placed etching shields, via hot pressing, and the like.

Abstract translation: 本发明的实施例涉及形成具有各种构造的微探针尖元件。 在一些实施例中，尖端由与探针本身相同的建筑材料形成，而在其它实施例中，尖端可以由不同的材料形成和/或可以包括涂层材料。 在一些实施例中，尖端在探针的主要部分之前形成，并且尖端形成在临时衬底附近或与临时衬底接触。 探针尖端图案化可以以各种不同的方式发生，包括例如通过在各向异性或各向异性地蚀刻硅的图案化孔中模制，通过在曝光的光致抗蚀剂中形成的空隙中模制，通过在牺牲材料中的空隙中模制， 由于牺牲材料通过电介质材料的细小尺寸和定位的区域，经由热压等等仔细地尺寸和放置的蚀刻屏蔽部分上的尖端材料的各向同性蚀刻而形成。

公开(公告)号：US20150307997A1

公开(公告)日：2015-10-29

申请号：US14675431

申请日：2015-03-31

Applicant: Microfabrica Inc.

Inventor： Michael S. Lockard ,  Adam L. Cohen ,  Dennis R. Smalley ,  Willa M. Larsen ,  Richard T. Chen

IPC: C23C28/00 ,  C25D5/02 ,  C23C18/16 ,  C23F17/00 ,  C25D5/48 ,  C25D5/10

CPC classification number: C25D5/022 ,  B81C1/00373 ,  C23C18/1605 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/1657 ,  C23C18/1689 ,  C23C18/22 ,  C25D1/003 ,  C25D5/10 ,  C25D5/48

Abstract: Embodiments of the present invention provide mesoscale or microscale three-dimensional structures (e.g. components, device, and the like). Embodiments relate to one or more of (1) the formation of such structures which incorporate dielectric material and/or wherein seed layer material used to allow deposition over dielectric material is removed via planarization operations; (2) the formation of such structures wherein masks used for at least some selective patterning operations are obtained through transfer plating of masking material to a surface of a substrate or previously formed layer, and/or (3) the formation of such structures wherein masks used for forming at least portions of some layers are patterned on the build surface directly from data representing the mask configuration, e.g. in some embodiments mask patterning is achieved by selectively dispensing material via a computer controlled inkjet nozzle or array or via a computer controlled extrusion device.

Abstract translation: 本发明的实施例提供中尺度或微尺寸的三维结构（例如部件，装置等）。 实施例涉及以下一个或多个（1）形成这种结合电介质材料的结构和/或其中用于允许在电介质材料上沉积的种子层材料通过平面化操作去除; （2）形成这样的结构，其中用于至少一些选择性图案化操作的掩模通过将掩模材料转移到衬底或先前形成的层的表面获得，和/或（3）形成这样的结构，其中掩模 用于形成至少部分一些层的图案直接来自表示掩模配置的数据在构建表面上图案化，例如 在一些实施例中，通过经由计算机控制的喷墨喷嘴或阵列或经由计算机控制的挤出装置选择性地分配材料来实现掩模图案化。