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Patent Agency Ranking
公开(公告)号：US09423969B2
公开(公告)日：2016-08-23
申请号：US14827371
申请日：2015-08-17
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Jonathan Pabustan , Vishal Sarin , Dzung H. Nguyen
CPC classification number: G06F3/0613 , G06F3/0655 , G06F3/0679 , G11C16/08 , G11C16/10 , G11C16/26 , G11C16/32 , G11C16/3454 , G11C16/3459
Abstract: Methods for sensing, method for programming, memory devices, and memory systems are disclosed. In one such method for sensing, a counting circuit generates a count output and a translated count output. The count output is converted into a time varying voltage that biases a word line coupled to memory cells being sensed. Target data for each memory cell is stored in a data cache associated with that particular memory cell. When it is detected that a memory cell has turned on, the translated count output associated with the count output that is indicative of the voltage level that turned on the memory cell is compared to the target data. The comparison determines the state of the memory cell.
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2.发明申请Memory controllers to output data signals of a number of bits and to receive data signals of a different number of bits 有权存储器控制器输出多个位的数据信号并接收不同位数的数据信号公开(公告)号：US20130166815A1
公开(公告)日：2013-06-27
申请号：US13770059
申请日：2013-02-19
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Vishal Sarin , Jung-Sheng Hoei , Jonathan Pabustan , Frankie F. Roohparvar
IPC: G06F12/02
CPC classification number: G11C11/5642 , G11C7/16 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C27/005 , G11C2211/5621 , G11C2211/5622 , G11C2211/5642 , G11C2216/14
Abstract: A memory controller has a digital signal processor. The digital signal processor is configured to output a digital data signal of M+N bits of program data intended for programming a memory cell of a memory device. The digital signal processor is configured to receive a digital data signal of M+L bits read from the memory cell of the memory device and to retrieve from the received digital data signal M bits of data that were stored in the memory cell.
Abstract translation: 存储器控制器具有数字信号处理器。 数字信号处理器被配置为输出用于对存储器件的存储器单元进行编程的程序数据的M + N位的数字数据信号。 数字信号处理器被配置为接收从存储器件的存储器单元读取的M + L位的数字数据信号，并从接收的数字数据信号M中取回存储在存储单元中的数据位。
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3.发明授权Memory controllers to output data signals of a number of bits and to receive data signals of a different number of bits 有权存储器控制器输出多个位的数据信号并接收不同位数的数据信号公开(公告)号：US08737127B2
公开(公告)日：2014-05-27
申请号：US13770059
申请日：2013-02-19
Applicant: Micron Technology, Inc.
Inventor： Vishal Sarin , Jung-Sheng Hoei , Jonathan Pabustan , Frankie F. Roohparvar
IPC: G11C16/04
CPC classification number: G11C11/5642 , G11C7/16 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C27/005 , G11C2211/5621 , G11C2211/5622 , G11C2211/5642 , G11C2216/14
Abstract: A memory controller has a digital signal processor. The digital signal processor is configured to output a digital data signal of M+N bits of program data intended for programming a memory cell of a memory device. The digital signal processor is configured to receive a digital data signal of M+L bits read from the memory cell of the memory device and to retrieve from the received digital data signal M bits of data that were stored in the memory cell.
Abstract translation: 存储器控制器具有数字信号处理器。 数字信号处理器被配置为输出用于对存储器件的存储器单元进行编程的程序数据的M + N位的数字数据信号。 数字信号处理器被配置为接收从存储器件的存储器单元读取的M + L位的数字数据信号，并从接收的数字数据信号M中取回存储在存储单元中的数据位。
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公开(公告)号：US20150355849A1
公开(公告)日：2015-12-10
申请号：US14827371
申请日：2015-08-17
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Jonathan Pabustan , Vishal Sarin , Dzung H. Nguyen
CPC classification number: G06F3/0613 , G06F3/0655 , G06F3/0679 , G11C16/08 , G11C16/10 , G11C16/26 , G11C16/32 , G11C16/3454 , G11C16/3459
Abstract: Methods for sensing, method for programming, memory devices, and memory systems are disclosed. In one such method for sensing, a counting circuit generates a count output and a translated count output. The count output is converted into a time varying voltage that biases a word line coupled to memory cells being sensed. Target data for each memory cell is stored in a data cache associated with that particular memory cell. When it is detected that a memory cell has turned on, the translated count output associated with the count output that is indicative of the voltage level that turned on the memory cell is compared to the target data. The comparison determines the state of the memory cell.
Abstract translation: 公开了感测方法，编程方法，存储器件和存储器系统。 在一种用于感测的方法中，计数电路产生计数输出和转换计数输出。 计数输出被转换成时变电压，该电压偏置耦合到被感测的存储器单元的字线。 每个存储器单元的目标数据被存储在与该特定存储器单元相关联的数据高速缓存器中。 当检测到存储器单元已经接通时，将与指示存储器单元接通的电压电平的计数输出相关联的转换计数输出与目标数据进行比较。 比较确定存储单元的状态。
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公开(公告)号：US20140104956A1
公开(公告)日：2014-04-17
申请号：US14104444
申请日：2013-12-12
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Jonathan Pabustan , Vishal Sarin , Dzung H. Nguyen
IPC: G11C16/10
CPC classification number: G06F3/0613 , G06F3/0655 , G06F3/0679 , G11C16/08 , G11C16/10 , G11C16/26 , G11C16/32 , G11C16/3454 , G11C16/3459
Abstract: Methods for sensing, method for programming, memory devices, and memory systems are disclosed. In one such method for sensing, a counting circuit generates a count output and a translated count output. The count output is converted into a time varying voltage that biases a word line coupled to memory cells being sensed. Target data for each memory cell is stored in a data cache associated with that particular memory cell. When it is detected that a memory cell has turned on, the translated count output associated with the count output that is indicative of the voltage level that turned on the memory cell is compared to the target data. The comparison determines the state of the memory cell.
Abstract translation: 公开了感测方法，编程方法，存储器件和存储器系统。 在一种用于感测的方法中，计数电路产生计数输出和转换计数输出。 计数输出被转换成时变电压，该电压偏置耦合到被感测的存储器单元的字线。 每个存储器单元的目标数据被存储在与该特定存储器单元相关联的数据高速缓存器中。 当检测到存储器单元已经接通时，将与指示存储器单元接通的电压电平的计数输出相关联的转换计数输出与目标数据进行比较。 比较确定存储单元的状态。
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