公开(公告)号：US20240153912A1

公开(公告)日：2024-05-09

申请号：US18416180

申请日：2024-01-18

申请人： Micron Technology, Inc.

发明人： Enyong Tai ,  Hem P. Takiar ,  Li Wang ,  Hong Wan Ng

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  H01L25/18

CPC分类号： H01L25/0652 ,  H01L24/45 ,  H01L24/85 ,  H01L25/18 ,  H01L25/50 ,  H01L2225/06562

摘要： A semiconductor device assembly includes a substrate, a first stack of semiconductor dies disposed directly over a first location on the substrate, and a second stack of semiconductor dies disposed directly over a second location on the substrate and electrically coupled to a second subset of the plurality of external connections. A portion of the semiconductor dies of the second stack overlaps a portion of the semiconductor dies of the first stack. The semiconductor device assembly further includes an encapsulant at least partially encapsulating the substrate, the first stack and the second stack.

公开(公告)号：US11908833B2

公开(公告)日：2024-02-20

申请号：US17723386

申请日：2022-04-18

申请人： Micron Technology, Inc.

发明人： Enyong Tai ,  Hem P. Takiar ,  Li Wang ,  Hong Wan Ng

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L25/18 ,  H01L25/00

CPC分类号： H01L25/0652 ,  H01L24/45 ,  H01L24/85 ,  H01L25/18 ,  H01L25/50 ,  H01L2225/06562

摘要： A semiconductor device assembly includes a substrate, a first stack of semiconductor dies disposed directly over a first location on the substrate, and a second stack of semiconductor dies disposed directly over a second location on the substrate and electrically coupled to a second subset of the plurality of external connections. A portion of the semiconductor dies of the second stack overlaps a portion of the semiconductor dies of the first stack. The semiconductor device assembly further includes an encapsulant at least partially encapsulating the substrate, the first stack and the second stack.

公开(公告)号：US11309281B2

公开(公告)日：2022-04-19

申请号：US17003789

申请日：2020-08-26

申请人： Micron Technology, Inc.

发明人： Enyong Tai ,  Hem P. Takiar ,  Li Wang ,  Hong Wan Ng

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L25/18 ,  H01L25/00

摘要： A semiconductor device assembly includes a substrate having a plurality of external connections, a first stack of semiconductor dies disposed directly over a first location on the substrate and electrically coupled to a first subset of the plurality of external connections, and a second stack of semiconductor dies disposed directly over a second location on the substrate and electrically coupled to a second subset of the plurality of external connections. A portion of the semiconductor dies of the second stack overlaps a portion of the semiconductor dies of the first stack. The semiconductor device assembly further includes an encapsulant at least partially encapsulating the substrate, the first stack and the second stack.

公开(公告)号：US20240014083A1

公开(公告)日：2024-01-11

申请号：US18217827

申请日：2023-07-03

申请人： Micron Technology, Inc.

发明人： Hem P. Takiar ,  Raj K. Bansal ,  Jian Wei Lim ,  Li Wang ,  Jungbae Lee

IPC分类号： H01L23/16 ,  H01L23/00 ,  H01L25/065 ,  H01L21/48

CPC分类号： H01L23/16 ,  H01L24/32 ,  H01L24/73 ,  H01L25/0657 ,  H01L24/48 ,  H01L21/4803 ,  H01L24/16 ,  H01L2224/73265 ,  H01L2224/48145 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/16227 ,  H01L2924/182 ,  H01L2225/06562 ,  H01L2225/06506 ,  H01L2224/48227 ,  H01L2225/0651

摘要： A method of making a semiconductor device assembly is provided. The method comprises attaching a first semiconductor device to an upper surface of a substrate and disposing a stencil over the upper surface of the substrate. The stencil includes (i) an opening and (ii) a cavity in which the first semiconductor device is disposed. The method further comprises screen-printing an epoxy material into the opening and onto the upper surface of the substrate, removing the stencil, and planarizing an upper surface of the epoxy material to form an epoxy spacer.

公开(公告)号：US20220068877A1

公开(公告)日：2022-03-03

申请号：US17003789

申请日：2020-08-26

申请人： Micron Technology, Inc.

发明人： Enyong Tai ,  Hem P. Takiar ,  Li Wang ,  Hong Wan Ng

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L25/18 ,  H01L25/00

摘要： A semiconductor device assembly includes a substrate having a plurality of external connections, a first stack of semiconductor dies disposed directly over a first location on the substrate and electrically coupled to a first subset of the plurality of external connections, and a second stack of semiconductor dies disposed directly over a second location on the substrate and electrically coupled to a second subset of the plurality of external connections. A portion of the semiconductor dies of the second stack overlaps a portion of the semiconductor dies of the first stack. The semiconductor device assembly further includes an encapsulant at least partially encapsulating the substrate, the first stack and the second stack.

公开(公告)号：US20220271007A1

公开(公告)日：2022-08-25

申请号：US17723386

申请日：2022-04-18

申请人： Micron Technology, Inc.

发明人： Enyong Tai ,  Hem P. Takiar ,  Li Wang ,  Hong Wan Ng

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L25/18 ,  H01L25/00

摘要： A semiconductor device assembly includes a substrate, a first stack of semiconductor dies disposed directly over a first location on the substrate, and a second stack of semiconductor dies disposed directly over a second location on the substrate and electrically coupled to a second subset of the plurality of external connections. A portion of the semiconductor dies of the second stack overlaps a portion of the semiconductor dies of the first stack. The semiconductor device assembly further includes an encapsulant at least partially encapsulating the substrate, the first stack and the second stack.