公开(公告)号：US20150149838A1

公开(公告)日：2015-05-28

申请号：US14612103

申请日：2015-02-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Aswin Thiruvengadam ,  Angelo Visconti ,  Mauro Bonanomi ,  Richard E. Fackenthal ,  William Melton

IPC: G06F3/06

CPC classification number: G06F11/1008 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0644 ,  G06F3/0673 ,  G06F3/0679 ,  G06F11/0751 ,  G06F11/1048 ,  G06F11/1666 ,  G11C7/1006 ,  G11C7/1012 ,  G11C13/0004 ,  G11C13/0069 ,  G11C16/10 ,  G11C19/00

Abstract: This disclosure relates to avoiding a hard error in memory during write time by shifting data to be programmed to memory to mask the hard error. In one implementation, a method of programming data to a memory array includes obtaining error data corresponding to a selected memory cell, shifting a data pattern such that a value to be stored by the selected memory cell matches a value associated with a hard error, and programming the shifted data pattern to memory array such that the value programmed to the selected memory cell matches the value associated with the hard error.

Abstract translation: 本公开涉及通过将要编程的数据移动到存储器以避免硬错误而避免在写入时间期间的存储器中的硬错误。 在一个实现中，将数据编程到存储器阵列的方法包括获得与所选择的存储器单元相对应的错误数据，移位数据模式，使得所选存储器单元要存储的值与硬错误相关联的值匹配，以及 将移位的数据模式编程到存储器阵列，使得编程到所选择的存储器单元的值与与硬错误相关联的值匹配。

公开(公告)号：US08977929B2

公开(公告)日：2015-03-10

申请号：US13779381

申请日：2013-02-27

Applicant: Micron Technology, Inc.

Inventor： Aswin Thiruvengadam ,  Angelo Visconti ,  Mauro Bonanomi ,  Richard E. Fackenthal ,  William Melton

IPC: H03M13/00 ,  G06F11/16

CPC classification number: G06F11/1008 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0644 ,  G06F3/0673 ,  G06F3/0679 ,  G06F11/0751 ,  G06F11/1048 ,  G06F11/1666 ,  G11C7/1006 ,  G11C7/1012 ,  G11C13/0004 ,  G11C13/0069 ,  G11C16/10 ,  G11C19/00

Abstract: This disclosure relates to avoiding a hard error in memory during write time by shifting data to be programmed to memory to mask the hard error. In one implementation, a method of programming data to a memory array includes obtaining error data corresponding to a selected memory cell, shifting a data pattern such that a value to be stored by the selected memory cell matches a value associated with a hard error, and programming the shifted data pattern to memory array such that the value programmed to the selected memory cell matches the value associated with the hard error.

Abstract translation: 本公开涉及通过将要编程的数据移动到存储器以避免硬错误而避免在写入时间期间的存储器中的硬错误。 在一个实现中，将数据编程到存储器阵列的方法包括获得与所选择的存储器单元相对应的错误数据，移位数据模式，使得所选存储器单元要存储的值与硬错误相关联的值匹配，以及 将移位的数据模式编程到存储器阵列，使得编程到所选择的存储器单元的值与与硬错误相关联的值匹配。

公开(公告)号：US09454427B2

公开(公告)日：2016-09-27

申请号：US14855203

申请日：2015-09-15

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Aswin Thiruvengadam ,  Angelo Visconti ,  Mauro Bonanomi ,  Richard E. Fackenthal ,  William Melton

IPC: G11C29/00 ,  G06F11/10 ,  G06F11/16 ,  G06F11/07 ,  G06F3/06 ,  G11C7/10 ,  G11C13/00 ,  G11C16/10 ,  G11C19/00

CPC classification number: G06F11/1008 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0644 ,  G06F3/0673 ,  G06F3/0679 ,  G06F11/0751 ,  G06F11/1048 ,  G06F11/1666 ,  G11C7/1006 ,  G11C7/1012 ,  G11C13/0004 ,  G11C13/0069 ,  G11C16/10 ,  G11C19/00

Abstract: This disclosure relates to avoiding a hard error in memory during write time by shifting data to be programmed to memory to mask the hard error. In one implementation, a method of programming data to a memory array includes obtaining error data corresponding to a selected memory cell, shifting a data pattern such that a value to be stored by the selected memory cell matches a value associated with a hard error, and programming the shifted data pattern to memory array such that the value programmed to the selected memory cell matches the value associated with the hard error.

Abstract translation: 本公开涉及通过将要编程的数据移动到存储器以避免硬错误而避免在写入时间期间的存储器中的硬错误。 在一个实现中，将数据编程到存储器阵列的方法包括获得与所选择的存储器单元相对应的错误数据，移位数据模式，使得所选存储器单元要存储的值与硬错误相关联的值匹配，以及 将移位的数据模式编程到存储器阵列，使得编程到所选择的存储器单元的值与与硬错误相关联的值匹配。

公开(公告)号：US20160004595A1

公开(公告)日：2016-01-07

申请号：US14855203

申请日：2015-09-15

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Aswin Thiruvengadam ,  Angelo Visconti ,  Mauro Bonanomi ,  Richard E. Fackenthal ,  William Melton

IPC: G06F11/10 ,  G06F3/06

CPC classification number: G06F11/1008 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0644 ,  G06F3/0673 ,  G06F3/0679 ,  G06F11/0751 ,  G06F11/1048 ,  G06F11/1666 ,  G11C7/1006 ,  G11C7/1012 ,  G11C13/0004 ,  G11C13/0069 ,  G11C16/10 ,  G11C19/00

Abstract: This disclosure relates to avoiding a hard error in memory during write time by shifting data to be programmed to memory to mask the hard error. In one implementation, a method of programming data to a memory array includes obtaining error data corresponding to a selected memory cell, shifting a data pattern such that a value to be stored by the selected memory cell matches a value associated with a hard error, and programming the shifted data pattern to memory array such that the value programmed to the selected memory cell matches the value associated with the hard error.

Abstract translation: 本公开涉及通过将要编程的数据移动到存储器以避免硬错误而避免在写入时间期间的存储器中的硬错误。 在一个实现中，将数据编程到存储器阵列的方法包括获得与所选择的存储器单元相对应的错误数据，移位数据模式，使得所选存储器单元要存储的值与硬错误相关联的值匹配，以及 将移位的数据模式编程到存储器阵列，使得编程到所选择的存储器单元的值与与硬错误相关联的值匹配。

公开(公告)号：US09176831B2

公开(公告)日：2015-11-03

申请号：US14612103

申请日：2015-02-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Aswin Thiruvengadam ,  Angelo Visconti ,  Mauro Bonanomi ,  Richard E. Fackenthal ,  William Melton

IPC: G11C29/00 ,  G06F11/16 ,  G06F11/07 ,  G06F3/06 ,  G11C7/10 ,  G11C13/00 ,  G11C16/10 ,  G11C19/00

CPC classification number: G06F11/1008 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0644 ,  G06F3/0673 ,  G06F3/0679 ,  G06F11/0751 ,  G06F11/1048 ,  G06F11/1666 ,  G11C7/1006 ,  G11C7/1012 ,  G11C13/0004 ,  G11C13/0069 ,  G11C16/10 ,  G11C19/00

Abstract: This disclosure relates to avoiding a hard error in memory during write time by shifting data to be programmed to memory to mask the hard error. In one implementation, a method of programming data to a memory array includes obtaining error data corresponding to a selected memory cell, shifting a data pattern such that a value to be stored by the selected memory cell matches a value associated with a hard error, and programming the shifted data pattern to memory array such that the value programmed to the selected memory cell matches the value associated with the hard error.

Abstract translation: 本公开涉及通过将要编程的数据移动到存储器以避免硬错误而避免在写入时间期间的存储器中的硬错误。 在一个实现中，将数据编程到存储器阵列的方法包括获得与所选择的存储器单元相对应的错误数据，移位数据模式，使得所选存储器单元要存储的值与硬错误相关联的值匹配，以及 将移位的数据模式编程到存储器阵列，使得编程到所选择的存储器单元的值与与硬错误相关联的值匹配。

公开(公告)号：US20140245107A1

公开(公告)日：2014-08-28

申请号：US13779381

申请日：2013-02-27

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Aswin Thiruvengadam ,  Angelo Visconti ,  Mauro Bonanomi ,  Richard E. Fackenthal ,  William Melton

IPC: G06F11/16

CPC classification number: G06F11/1008 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0644 ,  G06F3/0673 ,  G06F3/0679 ,  G06F11/0751 ,  G06F11/1048 ,  G06F11/1666 ,  G11C7/1006 ,  G11C7/1012 ,  G11C13/0004 ,  G11C13/0069 ,  G11C16/10 ,  G11C19/00

Abstract: This disclosure relates to avoiding a hard error in memory during write time by shifting data to be programmed to memory to mask the hard error. In one implementation, a method of programming data to a memory array includes obtaining error data corresponding to a selected memory cell, shifting a data pattern such that a value to be stored by the selected memory cell matches a value associated with a hard error, and programming the shifted data pattern to memory array such that the value programmed to the selected memory cell matches the value associated with the hard error.

Abstract translation: 本公开涉及通过将要编程的数据移动到存储器以避免硬错误而避免在写入时间期间的存储器中的硬错误。 在一个实现中，将数据编程到存储器阵列的方法包括获得与所选择的存储器单元相对应的错误数据，移位数据模式，使得所选存储器单元要存储的值与硬错误相关联的值匹配，以及 将移位的数据模式编程到存储器阵列，使得编程到所选择的存储器单元的值与与硬错误相关联的值匹配。