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公开(公告)号：US08977929B2
公开(公告)日：2015-03-10
申请号：US13779381
申请日：2013-02-27
Applicant: Micron Technology, Inc.
Inventor： Aswin Thiruvengadam , Angelo Visconti , Mauro Bonanomi , Richard E. Fackenthal , William Melton
CPC classification number: G06F11/1008 , G06F3/0619 , G06F3/064 , G06F3/0644 , G06F3/0673 , G06F3/0679 , G06F11/0751 , G06F11/1048 , G06F11/1666 , G11C7/1006 , G11C7/1012 , G11C13/0004 , G11C13/0069 , G11C16/10 , G11C19/00
Abstract: This disclosure relates to avoiding a hard error in memory during write time by shifting data to be programmed to memory to mask the hard error. In one implementation, a method of programming data to a memory array includes obtaining error data corresponding to a selected memory cell, shifting a data pattern such that a value to be stored by the selected memory cell matches a value associated with a hard error, and programming the shifted data pattern to memory array such that the value programmed to the selected memory cell matches the value associated with the hard error.
Abstract translation: 本公开涉及通过将要编程的数据移动到存储器以避免硬错误而避免在写入时间期间的存储器中的硬错误。 在一个实现中，将数据编程到存储器阵列的方法包括获得与所选择的存储器单元相对应的错误数据，移位数据模式，使得所选存储器单元要存储的值与硬错误相关联的值匹配，以及 将移位的数据模式编程到存储器阵列，使得编程到所选择的存储器单元的值与与硬错误相关联的值匹配。
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公开(公告)号：US20140245107A1
公开(公告)日：2014-08-28
申请号：US13779381
申请日：2013-02-27
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Aswin Thiruvengadam , Angelo Visconti , Mauro Bonanomi , Richard E. Fackenthal , William Melton
IPC: G06F11/16
CPC classification number: G06F11/1008 , G06F3/0619 , G06F3/064 , G06F3/0644 , G06F3/0673 , G06F3/0679 , G06F11/0751 , G06F11/1048 , G06F11/1666 , G11C7/1006 , G11C7/1012 , G11C13/0004 , G11C13/0069 , G11C16/10 , G11C19/00
Abstract: This disclosure relates to avoiding a hard error in memory during write time by shifting data to be programmed to memory to mask the hard error. In one implementation, a method of programming data to a memory array includes obtaining error data corresponding to a selected memory cell, shifting a data pattern such that a value to be stored by the selected memory cell matches a value associated with a hard error, and programming the shifted data pattern to memory array such that the value programmed to the selected memory cell matches the value associated with the hard error.
Abstract translation: 本公开涉及通过将要编程的数据移动到存储器以避免硬错误而避免在写入时间期间的存储器中的硬错误。 在一个实现中，将数据编程到存储器阵列的方法包括获得与所选择的存储器单元相对应的错误数据，移位数据模式，使得所选存储器单元要存储的值与硬错误相关联的值匹配，以及 将移位的数据模式编程到存储器阵列，使得编程到所选择的存储器单元的值与与硬错误相关联的值匹配。
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公开(公告)号：US20150149838A1
公开(公告)日：2015-05-28
申请号：US14612103
申请日：2015-02-02
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Aswin Thiruvengadam , Angelo Visconti , Mauro Bonanomi , Richard E. Fackenthal , William Melton
IPC: G06F3/06
CPC classification number: G06F11/1008 , G06F3/0619 , G06F3/064 , G06F3/0644 , G06F3/0673 , G06F3/0679 , G06F11/0751 , G06F11/1048 , G06F11/1666 , G11C7/1006 , G11C7/1012 , G11C13/0004 , G11C13/0069 , G11C16/10 , G11C19/00
Abstract: This disclosure relates to avoiding a hard error in memory during write time by shifting data to be programmed to memory to mask the hard error. In one implementation, a method of programming data to a memory array includes obtaining error data corresponding to a selected memory cell, shifting a data pattern such that a value to be stored by the selected memory cell matches a value associated with a hard error, and programming the shifted data pattern to memory array such that the value programmed to the selected memory cell matches the value associated with the hard error.
Abstract translation: 本公开涉及通过将要编程的数据移动到存储器以避免硬错误而避免在写入时间期间的存储器中的硬错误。 在一个实现中，将数据编程到存储器阵列的方法包括获得与所选择的存储器单元相对应的错误数据，移位数据模式，使得所选存储器单元要存储的值与硬错误相关联的值匹配，以及 将移位的数据模式编程到存储器阵列，使得编程到所选择的存储器单元的值与与硬错误相关联的值匹配。
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Patent Agency Ranking
公开(公告)号：US20130242650A1
公开(公告)日：2013-09-19
申请号：US13886564
申请日：2013-05-03
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Aswin Thiruvengadam , William Melton , Rich Fackenthal , Andrew Oen
IPC: G11C13/00
CPC classification number: G11C13/0009 , G11C13/0004 , G11C13/0069
Abstract: A memory device and method for programming the memory device, including a method for a melting phase change memory cell by applying an electronic signal at a first value and subsequently decreasing the signal value. The phase change memory cell can be substantially crystallized after the decrease in signal value.
Abstract translation: 一种用于对存储器件进行编程的存储器件和方法，包括通过以第一值施加电子信号并随后减小信号值来解耦相变存储器单元的方法。 在信号值下降之后，相变存储单元可以基本上结晶。
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公开(公告)号：US09454427B2
公开(公告)日：2016-09-27
申请号：US14855203
申请日：2015-09-15
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Aswin Thiruvengadam , Angelo Visconti , Mauro Bonanomi , Richard E. Fackenthal , William Melton
IPC: G11C29/00 , G06F11/10 , G06F11/16 , G06F11/07 , G06F3/06 , G11C7/10 , G11C13/00 , G11C16/10 , G11C19/00
CPC classification number: G06F11/1008 , G06F3/0619 , G06F3/064 , G06F3/0644 , G06F3/0673 , G06F3/0679 , G06F11/0751 , G06F11/1048 , G06F11/1666 , G11C7/1006 , G11C7/1012 , G11C13/0004 , G11C13/0069 , G11C16/10 , G11C19/00
Abstract: This disclosure relates to avoiding a hard error in memory during write time by shifting data to be programmed to memory to mask the hard error. In one implementation, a method of programming data to a memory array includes obtaining error data corresponding to a selected memory cell, shifting a data pattern such that a value to be stored by the selected memory cell matches a value associated with a hard error, and programming the shifted data pattern to memory array such that the value programmed to the selected memory cell matches the value associated with the hard error.
Abstract translation: 本公开涉及通过将要编程的数据移动到存储器以避免硬错误而避免在写入时间期间的存储器中的硬错误。 在一个实现中，将数据编程到存储器阵列的方法包括获得与所选择的存储器单元相对应的错误数据，移位数据模式，使得所选存储器单元要存储的值与硬错误相关联的值匹配，以及 将移位的数据模式编程到存储器阵列，使得编程到所选择的存储器单元的值与与硬错误相关联的值匹配。
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公开(公告)号：US20160004595A1
公开(公告)日：2016-01-07
申请号：US14855203
申请日：2015-09-15
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Aswin Thiruvengadam , Angelo Visconti , Mauro Bonanomi , Richard E. Fackenthal , William Melton
CPC classification number: G06F11/1008 , G06F3/0619 , G06F3/064 , G06F3/0644 , G06F3/0673 , G06F3/0679 , G06F11/0751 , G06F11/1048 , G06F11/1666 , G11C7/1006 , G11C7/1012 , G11C13/0004 , G11C13/0069 , G11C16/10 , G11C19/00
Abstract: This disclosure relates to avoiding a hard error in memory during write time by shifting data to be programmed to memory to mask the hard error. In one implementation, a method of programming data to a memory array includes obtaining error data corresponding to a selected memory cell, shifting a data pattern such that a value to be stored by the selected memory cell matches a value associated with a hard error, and programming the shifted data pattern to memory array such that the value programmed to the selected memory cell matches the value associated with the hard error.
Abstract translation: 本公开涉及通过将要编程的数据移动到存储器以避免硬错误而避免在写入时间期间的存储器中的硬错误。 在一个实现中，将数据编程到存储器阵列的方法包括获得与所选择的存储器单元相对应的错误数据，移位数据模式，使得所选存储器单元要存储的值与硬错误相关联的值匹配，以及 将移位的数据模式编程到存储器阵列，使得编程到所选择的存储器单元的值与与硬错误相关联的值匹配。
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公开(公告)号：US09176831B2
公开(公告)日：2015-11-03
申请号：US14612103
申请日：2015-02-02
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Aswin Thiruvengadam , Angelo Visconti , Mauro Bonanomi , Richard E. Fackenthal , William Melton
CPC classification number: G06F11/1008 , G06F3/0619 , G06F3/064 , G06F3/0644 , G06F3/0673 , G06F3/0679 , G06F11/0751 , G06F11/1048 , G06F11/1666 , G11C7/1006 , G11C7/1012 , G11C13/0004 , G11C13/0069 , G11C16/10 , G11C19/00
Abstract: This disclosure relates to avoiding a hard error in memory during write time by shifting data to be programmed to memory to mask the hard error. In one implementation, a method of programming data to a memory array includes obtaining error data corresponding to a selected memory cell, shifting a data pattern such that a value to be stored by the selected memory cell matches a value associated with a hard error, and programming the shifted data pattern to memory array such that the value programmed to the selected memory cell matches the value associated with the hard error.
Abstract translation: 本公开涉及通过将要编程的数据移动到存储器以避免硬错误而避免在写入时间期间的存储器中的硬错误。 在一个实现中，将数据编程到存储器阵列的方法包括获得与所选择的存储器单元相对应的错误数据，移位数据模式，使得所选存储器单元要存储的值与硬错误相关联的值匹配，以及 将移位的数据模式编程到存储器阵列，使得编程到所选择的存储器单元的值与与硬错误相关联的值匹配。
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公开(公告)号：US09082477B2
公开(公告)日：2015-07-14
申请号：US13886564
申请日：2013-05-03
Applicant: Micron Technology, Inc.
Inventor： Aswin Thiruvengadam , William Melton , Rich Fackenthal , Andrew Oen
CPC classification number: G11C13/0009 , G11C13/0004 , G11C13/0069
Abstract: A memory device and method for programming the memory device, including a method for a melting phase change memory cell by applying an electronic signal at a first value and subsequently decreasing the signal value. The phase change memory cell can be substantially crystallized after the decrease in signal value.
Abstract translation: 一种用于对存储器件进行编程的存储器件和方法，包括通过以第一值施加电子信号并随后减小信号值来解耦相变存储器单元的方法。 在信号值下降之后，相变存储单元可以基本上结晶。
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