中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

5 records (took 0.016 seconds)

    Recessed Access Devices And Methods Of Forming A Recessed Access Devices
    1.
    发明申请
    Recessed Access Devices And Methods Of Forming A Recessed Access Devices 有权

    公开(公告)号：US20230062092A1

    公开(公告)日：2023-03-02

    申请号：US17460984

    申请日：2021-08-30

    Applicant: Micron Technology, Inc.

    Inventor： Hyuck Soo Yang ,  Sau Ha Cheung ,  Richard Beeler ,  Ping Chieh Chiang ,  Hyoung Lee ,  Jaydip Guha ,  Soichi Sugiura

    IPC: H01L27/108 ,  H01L29/51

    Abstract: A recessed access device comprises a conductive gate in a trench in semiconductor material. A gate insulator extends along sidewalls and around a bottom of the conductive gate between the conductive gate and the semiconductor material. A pair of source/drain regions are in upper portions of the semiconductor material on opposing lateral sides of the trench. A channel region in the semiconductor material below the pair of source/drain regions extends along sidewalls and around a bottom of the trench. The gate insulator comprises a low-k material and a high-k material. The low-k material is characterized by its dielectric constant k being no greater than 4.0. The high-k material is both (a) and (b), where: (a): characterized by its dielectric constant k being greater than 4.0; and (b): comprising SixMyO, where “M” is one or more of Al, metal(s) from Group 2, Group 3, Group 4, Group 5, and the lanthanide series of the periodic table; “x” is 0.999 to 0.6; and “y” is 0.001 to 0.4; the SixMyO being above the low-k material. Other embodiments, including method, are disclosed.

    METAL SENSE LINE CONTACT
    4.
    发明公开
    METAL SENSE LINE CONTACT 审中-公开

    公开(公告)号：US20240179894A1

    公开(公告)日：2024-05-30

    申请号：US18499871

    申请日：2023-11-01

    Applicant: Micron Technology, Inc.

    Inventor： Ping Chieh Chiang

    IPC: H10B12/00 ,  H01L29/40 ,  H01L29/49

    CPC classification number: H10B12/488 ,  H01L29/401 ,  H01L29/49 ,  H10B12/02

    Abstract: Methods, apparatuses, and systems related to a metal sense line contact are described. An example apparatus includes a sense line pillar comprising a barrier material over a semiconductor substrate. The sense line pillar further includes a liner material adjacent the barrier material. The sense line pillar further includes a first metal material over the barrier material. The sense line pillar further includes a second metal material over the first metal material. The sense line pillar further includes a cap material over the second metal material. The apparatus further cell contacts between a plurality of sense line pillars.

Patent Agency Ranking