Photo detector for weak light
    2.
    发明授权
    Photo detector for weak light 失效
    光检测器弱光

    公开(公告)号:US07078667B2

    公开(公告)日:2006-07-18

    申请号:US10883988

    申请日:2004-07-06

    摘要: This invention provides a photodetector for weak light and a weak light detection system including the photodetector for weak light the photodetector for weak light is comprised of a substrate on which an integrating read circuit including a PIN photodiode or an APD and an FET is mounted, wherein the entire assembly is mounted while separating the substrate from a ground potential without grounding the substrate, such a photodetector for weak light can reduce noise and ensure a high enough sensitivity enough to be able to discriminate the number of photons.

    摘要翻译: 本发明提供一种弱光用光检测器和弱光检测系统,其包括用于弱光的光检测器,用于弱光的光检测器由其上安装有包含PIN光电二极管或APD和FET的积分读电路的基板组成,其中 整个组件安装在将基板与接地电位分离而不使基板接地的情况下,这种用于弱光的光检测器可以降低噪声并确保足够高的足够的灵敏度以能够区分光子的数量。

    Photodetector for weak light having charge reset means
    3.
    发明授权
    Photodetector for weak light having charge reset means 失效
    具有电荷复位装置的弱光检测器

    公开(公告)号:US07067790B2

    公开(公告)日:2006-06-27

    申请号:US10883969

    申请日:2004-07-06

    IPC分类号: H01J40/14

    摘要: The present invention provides a photodetector for weak light that can release charge from the circuit without increasing capacity; the present invention being characterized by a photodetector for weak light that has a charge release means which permits the photodetector for weak light of the present invention to avoid increasing its capacity because it does not require a reset transistor integrated with the photodector, rather the charge reset means of the present invention lowers mounting capacity by removing itself from the circuit after it releases the charge.

    摘要翻译: 本发明提供一种用于弱光的光电检测器,其可以在不增加容量的情况下从电路释放电荷; 本发明的特征在于用于弱光的光电检测器,其具有允许本发明的弱光的光电检测器避免增加其容量的电荷释放装置,因为它不需要与光电二极管集成的复位晶体管,而是电荷复位 本发明的手段通过在释放电荷之后从电路中移除自身而降低安装能力。

    Photodetector for weak light with UV transparent substrates
    5.
    发明授权
    Photodetector for weak light with UV transparent substrates 失效
    具有UV透明基板的弱光检测器

    公开(公告)号:US07115868B2

    公开(公告)日:2006-10-03

    申请号:US10883990

    申请日:2004-07-06

    IPC分类号: G01J5/20

    摘要: The present invention provides a photodetector for weak light that can prevent noise from impurities, prevent electrodes from disconnecting from the substrate, and can be easily cooled; the present invention further provides a photodetector for weak light that can count the number of photons; the present invention solves the above problems by using an ultraviolet light transparent substrate on the photodetector for weak light.

    摘要翻译: 本发明提供一种能够防止杂质产生噪声的弱光检测器,防止电极与基板断开,容易冷却; 本发明还提供一种能够对光子数进行计数的弱光检测器; 本发明通过在用于弱光的光检测器上使用紫外光透明基板来解决上述问题。

    Method for manufacturing photodetector for weak light
    7.
    发明授权
    Method for manufacturing photodetector for weak light 失效
    弱光用光电检测器的制造方法

    公开(公告)号:US07176439B2

    公开(公告)日:2007-02-13

    申请号:US10883989

    申请日:2004-07-06

    IPC分类号: H01L31/00

    摘要: This invention provides a method for manufacturing a circuit for photon number counting without destroying a FET within the circuit by manufacturing a photodetector for weak light, the photodetector for weak light comprising a circuit on a substrate, the circuit comprising light detection means and a field effect transistor (FET), the method comprising: a light detection means connection step; an FET electrode-to-substrate electrode connection step; an external electrode connection step, a light detection means-to-gate connection step.

    摘要翻译: 本发明提供了一种用于制造光子数计数的电路的方法,而不会通过制造用于弱光的光电检测器来破坏电路内的FET,用于弱光的光检测器包括在基板上的电路,该电路包括光检测装置和场效应 晶体管(FET),所述方法包括:光检测装置连接步骤; FET电极到衬底电极连接步骤; 外部电极连接步骤,光检测装置对栅极连接步骤。

    Low-level light detector and low-level light imaging apparatus

    公开(公告)号:US20060163454A1

    公开(公告)日:2006-07-27

    申请号:US11090162

    申请日:2005-03-28

    IPC分类号: H01J40/14

    摘要: A low-level light detector includes an avalanche photodiode (APD) to which is applied a bias voltage adjusted to produce a multiplication factor of not more than 30, and a capacitor for accumulating carriers produced by light in the APD and multiplied using the APD characteristics, the capacitor being connected to the avalanche photodiode. The detector detects the intensity of light impinging on the avalanche photodiode by periodically reading the capacitor voltage and obtaining time-based differences in the voltage, or by resetting the capacitor voltage to a predetermined voltage each time the capacitor voltage is read.

    Low-level light detector and low-level light imaging apparatus
    10.
    发明授权
    Low-level light detector and low-level light imaging apparatus 失效
    低级光检测器和低级光成像设备

    公开(公告)号:US07135669B2

    公开(公告)日:2006-11-14

    申请号:US11090162

    申请日:2005-03-28

    IPC分类号: H03F3/08 H03K3/42

    摘要: A low-level light detector includes an avalanche photodiode (APD) to which is applied a bias voltage adjusted to produce a multiplication factor of not more than 30, and a capacitor for accumulating carriers produced by light in the APD and multiplied using the APD characteristics, the capacitor being connected to the avalanche photodiode. The detector detects the intensity of light impinging on the avalanche photodiode by periodically reading the capacitor voltage and obtaining time-based differences in the voltage, or by resetting the capacitor voltage to a predetermined voltage each time the capacitor voltage is read.

    摘要翻译: 低电平光检测器包括雪崩光电二极管(APD),施加了被调整以产生不大于30的乘法因子的偏置电压,以及用于累积由APD中的光产生并由APD特性乘以的载流子的电容器 电容器连接到雪崩光电二极管。 检测器通过周期性地读取电容器电压并获得基于时间的电压差异,或者每当读取电容器电压时,将电容器电压复位到预定电压,来检测入射在雪崩光电二极管上的光的强度。