摘要:
An optoelectronical semiconductor device having a bonding structure comprises a first optoelectronical structure, a second optoelectronical structure, and a transparent bonding structure formed in-between.
摘要:
An optoelectronical semiconductor device having a bonding structure comprises a first optoelectronical structure, a second optoelectronical structure, and a transparent bonding structure formed in-between.
摘要:
A light-emitting device comprising a substrate, a light-emitting stack, and a transparent adhesive layer having wavelength-converting materials embedded therein formed within the light-emitting device is provided.
摘要:
A method for manufacturing a light-emitting device comprising the steps of cutting a light-emitting unit by a laser beam, and cleaning the light-emitting unit by an acid solution to remove by-products resulted from the laser cutting.
摘要:
A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 11] or [01 1] from [100], or toward [011] or [0 11] from [ 100] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.
摘要:
A light-emitting device having a substrate, a light-emitting stack, and a transparent connective layer is provided. The light-emitting stack is disposed above the substrate and comprises a first diffusing surface. The transparent connective layer is disposed between the substrate and the first diffusing surface of the light-emitting stack; an index of refraction of the light-emitting stack is different from that of the transparent connective layer.
摘要:
A stamp having a nanoscale structure and a manufacturing method thereof are disclosed. The stamp includes a substrate, a buffer layer, and a nanoscale stamp layer. The method comprises forming a buffer layer on the substrate, and forming a stamp layer having a nanoscale structure on the buffer layer.
摘要:
A light emitting device having a transparent substrate, a light emitting stack, and a transparent adhesive layer is provided. The light emitting stack is disposed above the transparent substrate and comprises a diffusing surface. The transparent adhesive layer is disposed between the transparent substrate and the diffusing surface of the light emitting stack; an index of refraction of the light emitting stack is different from that of the transparent adhesive layer.
摘要:
A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.
摘要:
A light emitting device having a transparent substrate, a light emitting stack, and a transparent adhesive layer is provided. The light emitting stack is disposed above the transparent substrate and comprises a diffusing surface. The transparent adhesive layer is disposed between the transparent substrate and the diffusing surface of the light emitting stack; an index of refraction of the light emitting stack is different from that of the transparent adhesive layer.