公开(公告)号：US08441756B1

公开(公告)日：2013-05-14

申请号：US12970423

申请日：2010-12-16

申请人： Ming Sun ,  Dehua Han ,  Jose A. Medina ,  Ming Jiang ,  Ying Hong ,  Feng Liu ,  Jian X. Shen

发明人： Ming Sun ,  Dehua Han ,  Jose A. Medina ,  Ming Jiang ,  Ying Hong ,  Feng Liu ,  Jian X. Shen

IPC分类号： G11B5/39

CPC分类号： G11B5/187 ,  G11B5/3116 ,  G11B5/3163

摘要： A method and system for fabricating a magnetic transducer are described. The magnetic transducer includes a pole and a nonmagnetic intermediate layer adjacent to the pole. The pole has a paddle and a pole tip including a plurality of sidewalls. The pole includes a first magnetic pole layer, at least one antiferromagnetic coupling (AFC) structure on the first magnetic pole layer, and a second magnetic pole layer on the AFC structure(s). At least a portion of the first magnetic pole layer resides on the sidewalls of the pole tip. The paddle has a paddle width in a track width direction. The pole tip has a pole tip width in a track width direction that is less than the paddle width.

摘要翻译： 描述了用于制造磁换能器的方法和系统。 磁换能器包括极和邻近极的非磁性中间层。 极具有桨和包括多个侧壁的极尖。 所述极包括第一磁极层，在所述第一磁极层上的至少一个反铁磁耦​​合（AFC）结构和所述AFC结构上的第二磁极层。 第一磁极层的至少一部分位于极尖的侧壁上。 桨叶在轨道宽度方向上具有桨叶宽度。 极尖具有小于桨宽度的轨道宽度方向上的极尖宽度。

公开(公告)号：US08837081B1

公开(公告)日：2014-09-16

申请号：US13312107

申请日：2011-12-06

申请人： Chengtao R. Yu ,  Dehua Han ,  Ying Hong ,  Feng Liu ,  Laurence L. Chen ,  Zhanjie Li ,  Zhigang Bai ,  Yu Lo ,  Yunfei Ding

发明人： Chengtao R. Yu ,  Dehua Han ,  Ying Hong ,  Feng Liu ,  Laurence L. Chen ,  Zhanjie Li ,  Zhigang Bai ,  Yu Lo ,  Yunfei Ding

IPC分类号： G11B5/127

CPC分类号： G11B5/6076

摘要： A method and system provide a touchdown sensor for use in disk drive. The touchdown sensor includes a sensor layer including a plurality of magnetic layers interleaved with at least one nonmagnetic layer. The plurality of magnetic layers are magnetically coupled and single domain. Further, the sensor has a temperature coefficient of resistivity (TCR) of at least 0.15%/° C.

摘要翻译： 一种方法和系统提供用于磁盘驱动器的触地传感器。 触地传感器包括传感器层，传感器层包括与至少一个非磁性层交错的多个磁性层。 多个磁性层是磁耦合的和单一的结构域。 此外，传感器的电阻率（TCR）的温度系数至少为0.15％/℃。

公开(公告)号：US08582241B1

公开(公告)日：2013-11-12

申请号：US13479095

申请日：2012-05-23

申请人： Chengtao R. Yu ,  Dehua Han ,  Ying Hong ,  Feng Liu ,  Bo Zhang ,  Tao Pan

发明人： Chengtao R. Yu ,  Dehua Han ,  Ying Hong ,  Feng Liu ,  Bo Zhang ,  Tao Pan

IPC分类号： G11B5/147

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/315

摘要： A method and system for providing a magnetic read transducer is described. The magnetic recording transducer includes a write pole, a nonmagnetic gap, a magnetic seed layer, a trailing shield and coil(s) that energize the write pole. The write pole is configured to write to a media. The nonmagnetic gap is between the write pole and the magnetic seed layer. The magnetic seed layer includes a high moment layer and a magnetic buffer layer. The high moment layer is between the nonmagnetic gap and the magnetic buffer layer. The high moment layer has a saturation magnetization greater than 2.3 T and a first corrosion potential. The magnetic buffer layer has a second corrosion potential less than the first corrosion potential. The magnetic seed layer is between the trailing shield and the nonmagnetic gap layer. The magnetic buffer layer is between the trailing shield and the high moment layer.

摘要翻译： 描述了一种用于提供磁读取换能器的方法和系统。 磁记录换能器包括对写磁极通电的写磁极，非磁性间隙，磁性种子层，后屏蔽和线圈。 写极被配置为写入介质。 非磁性间隙位于写极和磁性种子层之间。 磁性种子层包括高力矩层和磁性缓冲层。 高磁矩层位于非磁性间隙和磁性缓冲层之间。 高力矩层具有大于2.3T的饱和磁化强度和第一腐蚀电位。 磁缓冲层具有小于第一腐蚀电位的第二腐蚀电位。 磁性种子层位于尾部屏蔽和非磁性间隙层之间。 磁缓冲层位于后盾和高力矩层之间。

公开(公告)号：US08444866B1

公开(公告)日：2013-05-21

申请号：US12886999

申请日：2010-09-21

申请人： Lijie Guan ,  Changqing Shi ,  Ming Jiang ,  Yun-Fei Li ,  Ying Hong

发明人： Lijie Guan ,  Changqing Shi ,  Ming Jiang ,  Yun-Fei Li ,  Ying Hong

IPC分类号： B44C1/22

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163 ,  Y10T29/49021 ,  Y10T29/49032

摘要： A method for fabricating a magnetic transducer having a nonmagnetic intermediate layer is described. A trench is provided in the intermediate layer. The trench has a profile and location corresponding to a pole. A first nonmagnetic gap layer is provided. At least part of the first nonmagnetic gap layer resides in the trench. A pole including magnetic material(s) is provided. At least part of the pole resides in the trench and on the part of the nonmagnetic layer in the trench. At least part of the intermediate layer adjacent to the pole is removed and a second nonmagnetic gap layer provided. The second nonmagnetic gap layer is thicker than the first nonmagnetic gap layer. Part of the second nonmagnetic layer and part of the first nonmagnetic layer adjacent to the pole form a side gap. A side shield, a gap, and a top shield are also provided.

摘要翻译： 描述了一种用于制造具有非磁性中间层的磁换能器的方法。 在中间层设置沟槽。 沟槽具有对应于杆的轮廓和位置。 提供第一非磁性间隙层。 第一非磁性间隙层的至少一部分位于沟槽中。 提供包括磁性材料的极柱。 极的至少一部分驻留在沟槽中以及在沟槽中的非磁性层的一部分上。 去除与极相邻的中间层的至少一部分，并提供第二非磁性间隙层。 第二非磁性间隙层比第一非磁性间隙层厚。 第二非磁性层的一部分和与极相邻的第一非磁性层的一部分形成侧面间隙。 还提供了侧护罩，间隙和顶盖。

公开(公告)号：US07640650B2

公开(公告)日：2010-01-05

申请号：US11965867

申请日：2007-12-28

申请人： Satoru Araki ,  Ying Hong ,  Wipul Jayasekara ,  Ming Jiang

发明人： Satoru Araki ,  Ying Hong ,  Wipul Jayasekara ,  Ming Jiang

IPC分类号： G11B5/127 ,  H04R31/00 ,  G11B5/33

CPC分类号： G11B5/398 ,  G01R33/098 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A method of making a magnetoresistive sensor includes defining a track width of a magnetoresistive element stack of the sensor. Further, processes of the method enable depositing of hard magnetic bias material on each side of the stack. These processes may permit both milling of excess depositions of the material outside of regions where the hard magnetic bias material is desired via use of a photoresist and making the material have a planar surface via chemical mechanical polishing, which also removes the material on top of the stack. The method includes removing excess material outside of the photoresist, wherein the excess material includes part of the hard bias layer, while a portion of the hard bias layer remains directly above the MR sensor stack.

摘要翻译： 制造磁阻传感器的方法包括限定传感器的磁阻元件堆的轨道宽度。 此外，该方法的处理使得能够在堆叠的每一侧上沉积硬磁偏置材料。 这些工艺可以允许通过使用光致抗蚀剂来研磨在需要硬磁偏置材料的区域之外的材料的过剩沉积，并且通过化学机械抛光使材料具有平坦表面，这也去除了 堆栈 该方法包括去除光致抗蚀剂外部的多余材料，其中多余的材料包括硬​​偏压层的一部分，而一部分硬偏压层直接保留在MR传感器堆叠的正上方。

公开(公告)号：US20090169732A1

公开(公告)日：2009-07-02

申请号：US11965648

申请日：2007-12-27

申请人： Ying Hong ,  Ming Jiang ,  John Westwood

发明人： Ying Hong ,  Ming Jiang ,  John Westwood

IPC分类号： B05D5/12 ,  G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B5/3932

摘要： Read elements and associated methods of fabrication are disclosed. During fabrication of the read element, and more particularly, the fabrication of the hard bias magnets, a non-magnetic sacrificial layer is deposited on top of the hard bias material. When a CMP process is subsequently performed, the sacrificial layer is polished instead of the hard bias material. The thicknesses of the hard bias magnets are not affected by the CMP process, but are rather defined by the deposition process of the hard bias material. As a result, the variations in the CMP process will not negatively affect the magnetic properties of the hard bias magnets so that they are able to provide substantially uniform effective magnetic fields to bias the free layer of the magnetoresistance (MR) sensor of the read element.

摘要翻译： 公开了读取元件和相关联的制造方法。 在读取元件的制造期间，更具体地说，硬质偏置磁体的制造中，非磁性牺牲层沉积在硬偏置材料的顶部上。 当随后执行CMP处理时，牺牲层被抛光而不是硬偏置材料。 硬偏置磁体的厚度不受CMP工艺的影响，而是由硬偏压材料的沉积过程限定。 结果，CMP工艺的变化不会对硬偏磁体的磁性能产生负面影响，使得它们能够提供基本上均匀的有效磁场，以偏置读取元件的磁阻（MR）传感器的自由层 。

公开(公告)号：US20090168253A1

公开(公告)日：2009-07-02

申请号：US11965867

申请日：2007-12-28

申请人： Satoru Araki ,  Ying Hong ,  Wipul Jayasekara ,  Ming Jiang

发明人： Satoru Araki ,  Ying Hong ,  Wipul Jayasekara ,  Ming Jiang

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  G01R33/098 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A method of making a magnetoresistive sensor includes defining a track width of a magnetoresistive element stack of the sensor. Further, processes of the method enable depositing of hard magnetic bias material on each side of the stack. These processes may permit both milling of excess depositions of the material outside of regions where the hard magnetic bias material is desired via use of a photoresist and making the material have a planar surface via chemical mechanical polishing, which also removes the material on top of the stack.

摘要翻译： 制造磁阻传感器的方法包括限定传感器的磁阻元件堆的轨道宽度。 此外，该方法的处理使得能够在堆叠的每一侧上沉积硬磁偏置材料。 这些工艺可以允许通过使用光致抗蚀剂来研磨在需要硬磁偏置材料的区域之外的材料的过剩沉积，并且通过化学机械抛光使材料具有平坦表面，这也去除了 堆栈

公开(公告)号：US20080274623A1

公开(公告)日：2008-11-06

申请号：US11743404

申请日：2007-05-02

申请人： Hung-Chin Guthrie ,  Ying Hong ,  Ming Jiang

发明人： Hung-Chin Guthrie ,  Ying Hong ,  Ming Jiang

IPC分类号： H01L21/302

CPC分类号： G11B5/3163 ,  G11B5/3169

摘要： Methods for fabricating TMR and CPP GMR magnetic heads using a chemical mechanical polishing (CMP) process with a patterned CMP conductive protective layer for sensor stripe height patterning. The method comprises defining a stripe height of a read sensor of a magnetic head reader. The method further comprises refill depositing an insulator layer on the read sensor. The method further comprises performing a CMP process down to the conductive protective layer on the read sensor deposited while defining the read sensor to remove an overfill portion of the insulator layer above the conductive protective layer and to remove a sensor pattern masking structure on the conductive protective layer. As a result, the insulator layer is planarized and smooth with the read sensor, eliminating fencing and alumina bumps typically encountered in the insulator layer at the edge of the patterned sensor.

摘要翻译： 使用化学机械抛光（CMP）工艺制造TMR和CPP GMR磁头的方法，具有用于传感器条纹高度图案化的图案化CMP导电保护层。 该方法包括定义磁头读取器的读取传感器的条带高度。 该方法还包括在读取的传感器上填充沉积绝缘体层。 该方法还包括在限定读取的传感器的同时，在读取的传感器上执行CMP处理，以去除传感器保护层上方的绝缘体层的过度填充部分，并且去除导电保护层上的传感器图案掩蔽结构 层。 结果，绝缘体层与读取传感器平坦化并且平滑，消除了在图案化传感器的边缘处的绝缘体层中通常遇到的栅栏和氧化铝凸块。

公开(公告)号：US20080155810A1

公开(公告)日：2008-07-03

申请号：US11616717

申请日：2006-12-27

申请人： Ying Hong ,  Ming Jiang ,  Mustafa M. Pinarbasi ,  John Westwood

发明人： Ying Hong ,  Ming Jiang ,  Mustafa M. Pinarbasi ,  John Westwood

IPC分类号： G11B5/127

CPC分类号： G11B5/3169 ,  B82Y25/00 ,  G01R33/0005 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3932 ,  G11B5/398 ,  Y10T29/49052

摘要： Methods for fabricating magnetic sensor heads using a CMP defined hard bias to fabricate a magnetic sensor head reader with a flat reader gap. The method comprises defining a read sensor of the magnetic sensor head. The method further comprises depositing an insulator layer on the read sensor. The method further comprises performing a chemical mechanical polishing (CMP) process down to a protective layer on the read sensor deposited while defining the read sensor to remove an overfill portion of the hard bias layer above the protective layer and to remove a sensor pattern masking layer above the protective layer.

摘要翻译： 使用CMP限定的硬偏置来制造磁传感器头的方法来制造具有平的读取器间隙的磁传感器头读取器。 该方法包括定义磁传感器头的读取传感器。 该方法还包括在读取传感器上沉积绝缘体层。 该方法还包括在定义读取传感器以去除保护层上方的硬偏置层的过度填充部分并且去除传感器图案掩模层的情况下，将沉积的读取传感器上的保护层进行化学机械抛光（CMP）处理 保护层上方。

公开(公告)号：US08749925B2

公开(公告)日：2014-06-10

申请号：US11965648

申请日：2007-12-27

申请人： Ying Hong ,  Ming Jiang ,  John Westwood

发明人： Ying Hong ,  Ming Jiang ,  John Westwood

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B5/3932

摘要： Read elements and associated methods of fabrication are disclosed. During fabrication of the read element, and more particularly, the fabrication of the hard bias magnets, a non-magnetic sacrificial layer is deposited on top of the hard bias material. When a CMP process is subsequently performed, the sacrificial layer is polished instead of the hard bias material. The thicknesses of the hard bias magnets are not affected by the CMP process, but are rather defined by the deposition process of the hard bias material. As a result, the variations in the CMP process will not negatively affect the magnetic properties of the hard bias magnets so that they are able to provide substantially uniform effective magnetic fields to bias the free layer of the magnetoresistance (MR) sensor of the read element.

摘要翻译： 公开了读取元件和相关联的制造方法。 在读取元件的制造期间，更具体地说，硬质偏置磁体的制造中，非磁性牺牲层沉积在硬偏置材料的顶部上。 当随后执行CMP处理时，牺牲层被抛光而不是硬偏置材料。 硬偏置磁体的厚度不受CMP工艺的影响，而是由硬偏压材料的沉积过程限定。 结果，CMP工艺的变化不会对硬偏磁体的磁性能产生负面影响，使得它们能够提供基本上均匀的有效磁场，以偏置读取元件的磁阻（MR）传感器的自由层 。