摘要:
The invention may include a novel composition for and/or processing of an active element for an EAS marker that achieves the same or better performance of existing materials while solving the problem of higher cost. It may include a magnetomechanical active element formed by planar strip of amorphous magnetostrictive alloy having a composition FeaNibMc wherein a+b+c=100, wherein a is in a range of 40-70 weight percent, b is in a range of 10-50 weight percent, and c is in a range of 10-50 weight percent, and where M is the balance of remaining elements; wherein the magnetomechanical active element is subject to batch annealing in the presence of a magnetic field that is substantially transverse to the ribbon length of the element and at a temperature of less than about 300° C. and for a time greater than at least about one hour.
摘要翻译:本发明可以包括用于和/或处理用于EAS标记的活性元件的新型组合物,其在解决较高成本的问题的同时实现现有材料的相同或更好的性能。 它可以包括由具有组成FeaNibMc的无定形磁致伸缩合金的平面条形成的磁力机械有源元件,其中a + b + c = 100,其中a在40-70重量%的范围内,b在10-50的范围内 重量百分比,c在10-50重量%的范围内,其中M是剩余元素的余量; 其中所述磁力机械有源元件在基本上横向于所述元件的带长度并且在小于约300℃的温度的磁场存在下进行分批退火,并且大于至少约一个时间 小时。
摘要:
A conduction structure for infrared microbolometer sensors and a method for sensing electromagnetic radiation may be provided. The microbolometer may include a first conductor layer and a second conductor layer. The microbolometer further may include a bolometer layer between the first conductor layer and the second conductor layer.
摘要:
A conduction structure for infrared microbolometer sensors and a method for sensing electromagnetic radiation may be provided. The microbolometer may include a first conductor layer and a second conductor layer. The microbolometer further may include a bolometer layer between the first conductor layer and the second conductor layer.
摘要:
A bias element for use in a magnetomechanical EAS marker is magnetized to saturation. Then the magnetic charge in the bias element is redistributed by applying to the bias element a magnetic field having an AC ringdown characteristic. The redistribution of magnetic charge improves the stability of the bias element, so that the marker incorporating the bias element is less likely to have its resonant frequency shifted by exposure to a stray magnetic field.
摘要:
A magnetic recording system uses an improved spin valve magnetoresistive (SVMR) sensor. The SVMR sensor has a self-pinned laminated layer as the pinned ferromagnetic layer in place of the conventional single-layer pinned layer. Because this laminated layer is "self-pinned", a hard bias or exchange bias layer is not needed. The self-pinned laminated layer has at least two ferromagnetic films antiferromagnetically coupled to one another across a thin antiferromagnetically (AF) coupling film. Since the two ferromagnetic films in this laminated layer have their magnetic moments aligned antiparallel, their two magnetic moments can be made to essentially cancel by making the two ferromagnetic films of substantially the same thickness. The magnetic field energy generated by the signal field acting on this laminated layer will be significantly less than the effective anisotropy energy of the laminated layer. This is because the former is proportional to the difference in thicknesses of the two ferromagnetic films in the laminated layer, while the latter is proportional to the sum of the thicknesses. As a result, the laminated layer will not rotate in the presence of the signal field, but will be "self-pinned". The elimination of the exchange bias layer previously required for pinning also eliminates the need for Ni--Mn and its associated high-temperature process.
摘要:
A metastable intermolecular composite (MIC) and methods for forming the same includes a first material and a second material having an interfacial region therebetween. The first and second material are capable of an exothermic chemical reaction with one another to form at least one product and are in sufficiently close physical proximity to one another so that upon initiation the exothermic reaction develops into a self initiating reaction. At least one of said first and second materials include a metal that is reactive with water vapor at room temperature. The interfacial region averages
摘要:
A process for the preparation of composite thermite particles, and thermite particles and consolidated objects formed from a plurality of pressed composite particles. The process includes providing one or more metal oxides and one or more complementary metals capable of reducing the metal oxide, and milling the metal oxide and the metal at a temperature below −50° C., such as cryomilling, to form a convoluted lamellar structure. The average layer thickness is generally between 10 nm and 1 μm. The molar proportions of the metal oxide and metal are generally within 30% of being stoichiometric for a thermite reaction.
摘要:
A material used to form a biasing element for a magnetomechanical EAS marker has a coercivity that is lower than the coercivity of biasing elements used in conventional magnetomechanical markers. The marker formed with the low coercivity material can be deactivated by applying an AC magnetic field at a level that is lower than is required for deactivation of conventional markers. The marker with the low coercivity bias element can also be deactivated when at a greater distance from a deactivation device than was previously practical.
摘要:
A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.