摘要:
A process for producing cis-4,5-dihydro-4,5-dihydroxyphthalic acid which comprises producing cis-4,5-dihydro-4,5-dihydroxyphthalic acid and/or a salt thereof from phthalic acid and/or a salt thereof using a microorganism whose activity to decompose cis-4,5-dihydro-4,5-dihydroxyphthalic acid and/or a salt thereof has disappeared or diminished, acidifying the product system unless it is acidic, and then extracting therefrom cis-4,5-dihydro-4,5-dihydroxyphthalic acid with such an organic solvent that it is miscible with water in any proportion and the mixture of the organic solvent with water can be separated into two layers upon adding a salt thereto, in the presence of a salt, or with an alcohol having 4 carbon atoms. The process enables one to produce cis-4,5-dihydro-4,5-dihydroxyphthalic acid from phthalic acid and/or its salt in a high yield.
摘要:
A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption. Semiconductor devices using this curable resin composition as an insulating film exhibit a low electricity consumption, work at a high speed, and have excellent reliability.
摘要:
A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption. Semiconductor devices using this curable resin composition as an insulating film exhibit a low electricity consumption, work at a high speed, and have excellent reliability.
摘要:
A composition for film formation and a film obtained by heating the composition. The composition comprises: (A) a hydrolyzate and/or partial condensate of a compound represented by the following formula (1) R1nSi(OR2)4-n (1) wherein R1 and R2 may be the same or different and each represent an alkyl group having 1 to 5 carbon atoms or an aryl group having 6 to 20 carbon atoms, and n is an integer of 1 or 2; (B) a metal chelate compound represented by the following formula (2) R3tM(OR4)s-t (2) wherein R3 represents a chelating agent, M represents a metal atom, R4 represents an alkyl group having 2 to 5 carbon atoms or an aryl group having 6 to 20 carbon atoms, s represents a valence of the metal M, and t is an integer of 1 to s; (C) an organic solvent having a boiling point of 110 to 180° C.; and (D) &bgr;-diketone.
摘要:
Electronic parts and a process for manufacturing the electronic parts are provided. The electronic parts comprise an electric insulating material exhibiting a high heat resistance and low dielectric constant as a structural component. The electric insulating material is formed of a polyimide containing a recurring unit represented by the following general formula (1). ##STR1##