公开(公告)号：US20150355322A1

公开(公告)日：2015-12-10

申请号：US14761861

申请日：2013-08-22

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Tadashi OSHIMA ,  Teruyuki HARA ,  Ryuhei TAKAHASHI ,  Atsushi OKAMURA

IPC分类号： G01S13/46 ,  G01S13/00

CPC分类号： G01S13/46 ,  G01S13/003 ,  G01S2007/2883

摘要： A passive radar device includes a band divider 103 that divides a received signal of a reflected wave from a target 202 on a frequency band by frequency band basis, a band divider 104 that divides a received signal of a direct wave on a frequency band by frequency band basis, a receiver 105 that receives a received signal of each frequency band and A/D converts the received signal, a receiver 106 that receives a received signal of each frequency band and A/D converts the received signal, a cross correlation processor 107 that performs a cross correlation between the received signals of the reflected wave and the direct wave on a frequency band by frequency band basis, and a band synthesizer 108 that performs a band synthesis on a cross correlation result of each frequency band.

摘要翻译： 无源雷达装置包括：带分割器103，其按频带划分来自目标202的反射波的接收信号;频带分割器104，其按频率按频率划分直接波的接收信号 接收机105，其接收每个频带的接收信号，A / D转换接收的信号;接收机106，其接收每个频带的接收信号，A / D转换接收的信号;互相关处理器107 在频带的基础上，在频带上的反射波的接收信号与直接波之间进行互相关，以及对每个频带的互相关结果进行频带合成的频带合成器108。

公开(公告)号：US20170207753A1

公开(公告)日：2017-07-20

申请号：US15249680

申请日：2016-08-29

申请人： Mitsubishi Electric Corporation

发明人： Katsuya KATO ,  Naoki KOSAKA ,  Eri FUKUDA ,  Shigeru FUJIWARA ,  Atsushi OKAMURA ,  Kenichiro CHOMEI

IPC分类号： H03F1/30 ,  H03F3/213 ,  H03F3/195

CPC分类号： H03F1/30 ,  H03F1/301 ,  H03F3/193 ,  H03F3/195 ,  H03F3/211 ,  H03F3/213 ,  H03F2200/447 ,  H03F2200/451

摘要： A power amplifier includes: a plurality of FET cells connected in parallel to each other; a plurality of first resistors connected between gate terminals of the plurality of FET cells and grounding terminals respectively; a plurality of second resistors having one ends connected to the gate terminals of the plurality of FET cells respectively and other ends connected to each other; a plurality of capacitors connected in parallel to the plurality of second resistors respectively; and a third resistor connected between a connection point of the other ends of the plurality of second resistors and a power supply terminal, wherein the first resistors have temperature coefficients of resistance greater than those of the second and third resistors and are arranged closer to the corresponding FET cells than the third resistor.

公开(公告)号：US20190223058A1

公开(公告)日：2019-07-18

申请号：US16327579

申请日：2016-10-06

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Noriyuki FUKUI ,  Keijiro TAKE ,  Atsushi OKAMURA

IPC分类号： H04W36/00

CPC分类号： H04W36/0016 ,  H04B17/21 ,  H04W16/28 ,  H04W36/00 ,  H04W36/00837 ,  H04W36/0088 ,  H04W48/10 ,  H04W74/08

摘要： Provided is a beam transmission/reception method, which is executed in a wireless communication system in which a terminal and a base station are configured to use a beam to communicate to and from each other. The beam transmission/reception method includes a first step of setting, by the base station, when receiving a random access signal transmitted by the terminal as a connection request, a beam direction group at a time of reception of the random access signal by adding a further outer beam direction to beam directions used at a time of transmission of a notification signal for measuring a signal before the reception.

公开(公告)号：US20170077012A1

公开(公告)日：2017-03-16

申请号：US15156596

申请日：2016-05-17

申请人： Mitsubishi Electric Corporation

发明人： Naoki KOSAKA ,  Shohei IMAI ,  Atsushi OKAMURA ,  Shinichi MIWA ,  Kenichiro CHOMEI ,  Yoshinobu SASAKI ,  Kenichi HORIGUCHI

IPC分类号： H01L23/495 ,  H03F3/16

CPC分类号： H01L23/4952 ,  H01L23/49562 ,  H01L23/66 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48137 ,  H01L2224/48157 ,  H01L2224/49052 ,  H01L2224/49096 ,  H01L2224/49111 ,  H01L2224/4917 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/19107 ,  H03F3/16 ,  H01L2924/20752 ,  H01L2224/05599

摘要： An amplifier includes a package, a transistor chip having a gate pad and a drain pad formed elongately, the transistor chip being provided in the package, and a plurality of drain bonding wires connected to the drain pad, wherein the plurality of drain bonding wires include a first outer-most bonding wire connected to one of two end portions of the drain pad, a second outer-most bonding wire connected to the other of the two end portions of the drain pad, and an intermediate bonding wire interposed between the first outer-most bonding wire and the second outer-most bonding wire, each of the plurality of drain bonding wires is longer than 1 mm, and the first outer-most bonding wire and the second outer-most bonding wire have loop heights larger than a loop height that the intermediate bonding wire has.

摘要翻译： 放大器包括封装，具有栅极焊盘的晶体管芯片和在该封装体内设置的晶体管芯片，以及与漏极焊盘连接的多个漏极接合线，其中多个漏极接合线包括 连接到排水垫的两个端部之一的第一最外面的接合线，连接到排水垫的两个端部中的另一端的第二最外面的接合线，以及插入在第一外部 多个接合线和第二最外侧接合线中的多个接合线的长度大于1mm，第一最外部接合线和第二最外部接合线的回路高度大于环路 中间接合线具有的高度。