High-frequency power amplifier
    1.
    发明授权

    公开(公告)号:US11923811B2

    公开(公告)日:2024-03-05

    申请号:US17374542

    申请日:2021-07-13

    摘要: A high-frequency power amplifier is configured in such a way as to include an input matching circuit, an amplifying element, an output matching circuit, a coupling circuit, a detection circuit, and an output terminal, and in such a way that either the input matching circuit or the output matching circuit has an active element, the detection circuit receives a signal outputted by the coupling circuit and outputs a control voltage into which the detection circuit converts the signal to the active element, and the active element changes the impedance of the active element in accordance with the control voltage outputted by the detection circuit, thereby changing the power of a signal outputted by either the input matching circuit having the active element or the output matching circuit having the active element, to change the power of a signal which the coupling circuit outputs to the output terminal.

    Antenna device and array antenna device

    公开(公告)号:US10361483B2

    公开(公告)日:2019-07-23

    申请号:US15324879

    申请日:2015-08-03

    摘要: The antenna device includes: an element part 100 having an excitation element 1, a first passive element 11 having first and second conductive parts 11a and 11b, a second passive element 21 having third and fourth conductive parts 21a and 21b, a first switch 12 controlling conduction between the first and second conductive parts, and a second switch 22 controlling conduction between the third and fourth conductive parts; and a controller 200 outputting an electric signal for controlling conduction of the first and second switches. The controller outputs identical DC signal to the first and second switches, and one of the first and second switches is brought into conduction while the other one is brought out of conduction.

    High-frequency power amplifier
    4.
    发明授权

    公开(公告)号:US10763797B2

    公开(公告)日:2020-09-01

    申请号:US16094797

    申请日:2016-05-19

    摘要: A high-frequency power amplifier is configured to include plural island patterns (28) in which ends thereof are arranged in the vicinity of a transmission line (23) and other ends thereof are arranged in the vicinity of an end line (24a) in a transmission line (24), a wire (30) for connecting an end of an island pattern (28) and the transmission line (23), and a wire (31) for connecting another end of the island pattern (28) and the end line (24a) of the second transmission line (24), so that a mismatch of the impedance component having a resistance component and a reactance component can be compensated for by changing the number of first connecting members and the number of second connecting members, the first and second connecting members configured to connect an island pattern (28) to the transmission lines (23) and (24).

    Semiconductor device
    5.
    发明授权

    公开(公告)号:US10797141B2

    公开(公告)日:2020-10-06

    申请号:US16319158

    申请日:2016-07-25

    摘要: A semiconductor device includes: an underlying substrate; a semiconductor layer formed on the underlying substrate; electrode patterns in which a drain electrode and a source electrode are alternately arranged along an array direction determined in advance, on the semiconductor layer; and a group of gate fingers each having a shape extending in an extending direction which is different from the array direction. Each of the gate fingers is disposed in a region between the drain electrode and the source electrode. Moreover, the gate fingers are arranged at positions displaced from one another in the extending direction.

    Semiconductor device
    6.
    发明授权

    公开(公告)号:US10777550B2

    公开(公告)日:2020-09-15

    申请号:US16465537

    申请日:2016-12-16

    摘要: A plurality of gate finger electrodes (2) is each arranged in a manner alternately adjacent to a corresponding one of drain electrodes (3) and a corresponding one of source electrode (4). The plurality of gate finger electrodes (2) is each connected to a corresponding one of gate routing lines (6). A resistor (7) has one end separating the gate routing lines (6) on respective two sides at a center portion between the gate routing lines (6), and has another end connected to an input line (10). Capacitors (8) are arranged on the respective two sides with respect to the resistor (7) and each connected to the corresponding gate routing line (6) by a corresponding one of air bridges (9).

    Amplifier
    7.
    发明授权

    公开(公告)号:US12028023B2

    公开(公告)日:2024-07-02

    申请号:US17381652

    申请日:2021-07-21

    IPC分类号: H03F1/22 H03F1/56

    摘要: Provided is an amplifier including: a first transistor connected to a signal input terminal; a second transistor connected to a signal output terminal; a wiring line configured to connect the first transistor and the second transistor to each other; and a variable inductor circuit which is electrically connected to the wiring line, and is grounded via a capacitor for DC current interruption, wherein the inductance value of the variable inductor circuit is set to an inductance value for canceling a parasitic capacitance between the first transistor and the second transistor.

    Power amplifier and filter
    8.
    发明授权

    公开(公告)号:US11381206B2

    公开(公告)日:2022-07-05

    申请号:US17039140

    申请日:2020-09-30

    IPC分类号: H03F3/16 H03F3/24

    摘要: A stub whose end is connected to an end of a transmission line, and a coupled line disposed in parallel with each of the transmission line and the stub, and electromagnetically coupled to each of the transmission line and the stub are included, and the stub and the coupled line operate as a first resonator for resonating with an odd order harmonic included in the amplified signal, and the transmission line, the stub, and the coupled line operate as a second resonator for resonating with an even order harmonic included in the amplified signal.

    High frequency switch
    10.
    发明授权

    公开(公告)号:US10439262B2

    公开(公告)日:2019-10-08

    申请号:US15769162

    申请日:2015-12-09

    摘要: There are provided: a first capacitor connected between first and second input/output terminals; a second capacitor connected between the first input/output terminal and a third input/output terminal; a first inductor having one end connected to the first input/output terminal; a second inductor having one end connected to the second input/output terminal and another end connected to another end of the first inductor; a third inductor having one end connected to the first input/output terminal; a fourth inductor having one end connected to the third input/output terminal and another end connected to another end of the third inductor; a first transistor having a drain terminal connected to said another ends of the first and second inductors and a source terminal that is grounded; and a second transistor having a drain terminal connected to said another ends of the third and fourth inductors and a source terminal that is grounded.