摘要:
A potential generating circuit comprises a capacitor (4); a ferroelectric capacitor (6) connected in series to the capacitor (4); an output terminal (11); a capacitor (10) for grounding the output terminal (11); a switch (9) for connecting a connecting node (5) between the two capacitors (4, 6) to the output terminal (11); and a switch (1) for connecting the connecting node (5) to the ground; wherein during a first period, with the switches (1) and (9) placed in the OFF state, a terminal (3) is provided with a positive potential and a terminal (7) is grounded; wherein during a second period following the first period, the terminal (3) is grounded and the switch (9) is placed in the ON state; wherein during a third period following the second period, the switch (9) is placed in the OFF state, the switch (1) is placed in the ON state, and the terminal (7) is provided with a positive potential; wherein during a fourth period following the third period, the terminal (7) is grounded; and wherein the first through fourth periods are repeated.
摘要:
A voltage generating circuit comprising a capacitor (4), a ferroelectric capacitor (6) serially connected to the capacitor (4), an output terminal (11), a capacitor (10) which grounds the output terminal (11), a supply voltage supplying terminal (13), a switch (1) which connects the supply voltage supplying terminal (13) and the connecting node (N1) of the two capacitors (4, 6), and a switch (9) which connects the connecting node (N1) and output terminal (11); wherein during a first period, with the two switches (1) and (9) placed in the OFF state, a terminal (3) is grounded and a terminal (7) is provided with a supply voltage; wherein during a second period, the terminal (3) is provided with the supply voltage and the switch (9) is placed in the ON state; wherein during a third period, the switch (9) is placed in the OFF state, the switch (1) is placed in the ON state, and the terminal (7) is grounded; wherein during a fourth period, the terminal (7) is provided with the supply voltage; and wherein thereafter the first through fourth periods are repeated.
摘要:
In an electric potential generating device, a source of an N type MIS transistor is mutually connected to that of a P type MIS transistor and also connected to an output terminal. A drain of an N type MIS transistor 54 is connected to a power supply voltage supply portion for supplying power supply voltage VDD, and a drain of the P type MIS transistor is connected to a ground. In addition, a substrate potential of the N type MIS transistor is a ground voltage VSS, and that of a P type MIS transistor 56 is the power supply voltage VDD. Thus, it is constituted as a source follower circuit for taking output out of the source. It is possible, by utilizing this electric potential generating device, to obtain a logic transformation circuit for stably switching between NOR operation and NAND operation.
摘要:
A learning method of a semiconductor device of the present invention comprises a neuro device having a multiplier as a synapse in which a weight varies according to an input weight voltage, and functioning as a neural network system that processes analog data, comprising a step A of inputting predetermined input data to the neuro device and calculating an error between a target value of an output of the neuro device with respect to the input data and an actual output, a step B of calculating variation amount in the error by varying a weight of the multiplier thereafter, and a step C of varying the weight of the multiplier based on the variation amount in the error, wherein in the steps B and C, after inputting a reset voltage for setting the weight to a substantially constant value to the multiplier as the weight voltage, the weight is varied by inputting the weight voltage corresponding to the weight to be varied.
摘要:
In an electric potential generating device, a source of an N type MIS transistor is mutually connected to that of a P type MIS transistor and also connected to an output terminal. A drain of an N type MIS transistor 54 is connected to a power supply voltage supply portion for supplying power supply voltage VDD, and a drain of the P type MIS transistor is connected to a ground. In addition, a substrate potential of the N type MIS transistor is a ground voltage VSS, and that of a P type MIS transistor 56 is the power supply voltage VDD. Thus, it is constituted as a source follower circuit for taking output out of the source. It is possible, by utilizing this electric potential generating device, to obtain a logic transformation circuit for stably switching between NOR operation and NAND operation.
摘要:
A non-volatile memory circuit comprising first and second transistors (101, 102) each having a gate and a drain, wherein the gates of these transistors are connected to each other and the drains of these transistors are connected to each other, whereby a first inverter is formed; third and fourth transistors (103, 104) each having a gate and a drain, wherein the gates of these transistors are connected to each other and the drains of these transistors are connected to each other, whereby a second inverter is formed; a fifth transistor (105) provided with a gate, which is connected to a word line (107), and which is connected between a first bit line (108) and an input terminal of the second inverter; a sixth transistor (106) provided with a gate, which is connected to the word line (107), and which is connected between a second bit line (109) and an input terminal of the first inverter; and first and second resistor elements (114, 115) which are serially connected to the first and second inverters, respectively, wherein the input terminal and an output terminal of the first inverter are connected to an output terminal and the input terminal of the second inverter, respectively, and the resistance values of the first and second resistor elements (114, 115), which are connected to a ground line (111), are electrically variable.
摘要:
Non-volatile latch circuit 10 of the present invention comprises ferroelectric capacitor 1 provided with a first electrode 1a, second electrode 1b, and ferroelectric film 1c that lies between these electrodes; reset terminal Tre that is connected to first electrode 1a and a CMOS inverter element 2 that is connected to second electrode 1b of ferroelectric capacitor 1; voltage switching terminal Tpl that applies a voltage to second electrode 1b; switching element 5 that is connected between second electrode 1b and second input terminal Tpl and switches a voltage applied to second electrode 1b; and set terminal Tse that applies a voltage for switching on or off switching element 5, wherein the voltage generated in second electrode 1b caused by polarization retained by ferroelectric film 1c is higher than the threshold voltage Vtn of NMISFET 4 of CMOS inverter element 2.
摘要:
An image playback apparatus and in image recording apparatus are designed to permit image playback from a selected position in an image file recorded to a directly accessible memory, such as a magnetic disk. During recording of an image file, the user can designate one or more candidate playback start positions in the file, and corresponding pointers are stored as part of the image file. When the file is to be played back, the playback apparatus accesses the pointer(s) and allows the user to select playback from the corresponding position(s) in the image file. Also the playback apparatus can rewrite pointers in an image file, whereby the user can designate candidate starting positions for future playback of the file.
摘要:
An improved fire detector unit has a plastic base defining a smoke chamber for detection of a smoke density in terms of light scattering due to the smoke particles in the smoke chamber. The base carries a circuit board mounting a light emitting element, a light receiving element, and other components forming a fire detecting circuit responsible for generating a fire warning signal based upon the detected smoke density. A metal-made electromagnetic shield is molded into the base to protect the light receiving element from electromagnetic radiation noises. The electromagnetic shield includes a ground terminal for connection with a ground line of the circuit board. In addition, terminal pins are molded into the base for electrical and physical connection of the circuit board to the base.
摘要:
In a light receiving element assembly in a camera, a light receiving element chip is provided in a first package and an IC chip for treating the output signal of the light receiving element is provided in a second package. A portion of the second package is extended so that a conductor pattern extended from the IC is provided on the extension. The output terminal of the light receiving element housed in the first package is connected to said pattern by soldering.