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    Manufacturing process of semiconductor device
    9.
    发明授权
    Manufacturing process of semiconductor device 有权
    半导体器件制造工艺

    公开(公告)号：US08349542B2

    公开(公告)日：2013-01-08

    申请号：US12783244

    申请日：2010-05-19

    申请人： Miwa Kozawa ,  Koji Nozaki ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

    发明人： Miwa Kozawa ,  Koji Nozaki ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

    IPC分类号： G03F7/26

    CPC分类号： H01L27/11526 ,  G03F7/0035 ,  G03F7/40 ,  G11B5/17 ,  G11B5/312 ,  G11B5/3163 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/32139 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11543

    摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.

    摘要翻译： 抗蚀剂图案增厚材料具有树脂，交联剂和具有环状结构的化合物，或者部分具有环状结构的树脂。 抗蚀剂图案具有在抗蚀剂图案上的表面层，在相同条件下，将表面层的抗蚀剂图案的蚀刻速率（nm / s）比为1.1以上，或将表面层与抗蚀剂 图案加厚。 形成抗蚀剂图案的方法包括在形成要在其表面上加厚的抗蚀剂图案之后施加增稠材料。 半导体器件具有由抗蚀剂图案形成的图案。 制造半导体器件的方法在形成要加厚的抗蚀剂图案之后，将增厚材料施加到抗蚀剂图案的表面以使其变厚，并通过蚀刻将该图案图案化为掩模。

    Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof
    10.
    发明授权
    Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof 有权
    抗蚀剂图案增厚材料，抗蚀剂图案及其形成方法以及半导体器件及其制造方法

    公开(公告)号：US07744768B2

    公开(公告)日：2010-06-29

    申请号：US11643896

    申请日：2006-12-22

    申请人： Miwa Kozawa ,  Koji Nozaki ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

    发明人： Miwa Kozawa ,  Koji Nozaki ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

    IPC分类号： C03C15/00 ,  C03C25/68 ,  C03F1/00

    CPC分类号： H01L27/11526 ,  G03F7/0035 ,  G03F7/40 ,  G11B5/17 ,  G11B5/312 ,  G11B5/3163 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/32139 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11543

    摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.

    摘要翻译： 抗蚀剂图案增厚材料具有树脂，交联剂和具有环状结构的化合物，或者部分具有环状结构的树脂。 抗蚀剂图案具有在抗蚀剂图案上的表面层，在相同条件下，将表面层的抗蚀剂图案的蚀刻速率（nm / s）比为1.1以上，或将表面层与抗蚀剂 图案加厚。 形成抗蚀剂图案的方法包括在形成要在其表面上加厚的抗蚀剂图案之后施加增稠材料。 半导体器件具有由抗蚀剂图案形成的图案。 用于制造半导体器件的工艺在形成要加厚的抗蚀剂图案之后，将增厚材料施加到抗蚀剂图案的表面以增厚，并通过蚀刻将图案图案化为掩模。