摘要:
A color filter substrate includes a transparent substrate with first and second opposed edges, a color filter layer including color filters of first, second and third types extending in a first direction with the third type interposed between the first and second types, and an opaque layer including opaque portions extending in the first direction and another opaque portion connected to the other opaque portions along the second edge. The color filter substrate is fabricated by (a) forming the opaque layer on the transparent substrate, and then (b) forming the color filter layer thereon. The step (a) includes forming an opening in a non-effective display area of the color filter substrate between one end of each color filter of the third type and the second edge. The step (b) includes attaching and rolling a dry film in the first direction on the transparent substrate after the color filters of the first and second types have been provided thereon.
摘要:
An active matrix substrate suppresses reduction in production yield and increase in production steps and simultaneously permits both sufficient securing of a storage capacity and improvement of an aperture ratio of a pixel. The active matrix substrate is an active matrix substrate and includes a thin film transistor disposed at an intersection of a scanning signal line with a data signal line on a substrate, the thin film transistor including a gate electrode connected to the scanning signal line, a source electrode connected to the data signal line, and a drain electrode connected to a drain lead-out wiring; a storage capacitor upper electrode connected to the drain lead-out wiring and a pixel electrode; and a storage capacitor wiring overlapping with the storage capacitor upper electrode through an insulating film, wherein the storage capacitor wiring has an extending portion overlapping with the drain lead-out wiring through the insulating film.
摘要:
An active matrix substrate suppresses reduction in production yield and increase in production steps and simultaneously permits both sufficient securing of a storage capacity and improvement of an aperture ratio of a pixel. The active matrix substrate is an active matrix substrate and includes a thin film transistor disposed at an intersection of a scanning signal line with a data signal line on a substrate, the thin film transistor including a gate electrode connected to the scanning signal line, a source electrode connected to the data signal line, and a drain electrode connected to a drain lead-out wiring; a storage capacitor upper electrode connected to the drain lead-out wiring and a pixel electrode; and a storage capacitor wiring overlapping with the storage capacitor upper electrode through an insulating film, wherein the storage capacitor wiring has an extending portion overlapping with the drain lead-out wiring through the insulating film.
摘要:
A color filter substrate for a liquid crystal display device includes a color layer, a photo spacer and a counter electrode disposed on the substrate, and an alignment control protrusion is disposed on the counter electrode for controlling alignment of liquid crystal. A manufacturing method for the color filter substrate includes the step of forming an opening by laser irradiation in a region of the counter electrode corresponding to an absent portion occurring in the alignment control protrusion. The manufacturing method is also applicable to an active matrix substrate for a liquid crystal display device. The manufacturing method can effectively correct a defect if one occurs in the alignment control protrusion.
摘要:
A color filter substrate for a liquid crystal display device includes a color layer, a photo spacer and a counter electrode disposed on the substrate, and an alignment control protrusion is disposed on the counter electrode for controlling alignment of liquid crystal. A manufacturing method for the color filter substrate includes the step of forming an opening by laser irradiation in a region of the counter electrode corresponding to an absent portion occurring in the alignment control protrusion. The manufacturing method is also applicable to an active matrix substrate for a liquid crystal display device. The manufacturing method can effectively correct a defect if one occurs in the alignment control protrusion.
摘要:
In a liquid crystal display device, an array substrate and a CF substrate arranged face to face with each other. A liquid crystal layer is provided between the array substrate and the CF substrate. The array substrate and the CF substrate are bonded together by a sealing member containing a photo curing material. The array substrate has a surface opposed to the CF substrate. Metal wires are provided in the circumferential portion of the opposed surface. A transparent film is disposed between the metal wires and the sealing member.
摘要:
After forming a gate electrode (4a) in a first step, a gate insulating film (5), a semiconductor film (8) and a conducting film (12) including a transparent conducting film (9) are stacked, and on the thus obtained multilayered body (18), a resist pattern (13a) including a first opening (14a) for exposing the conducting film (12) therein and a second opening (14b) having a bottom portion (B) above the gate electrode (4a) is formed. Portions of the conducting film (12) and the semiconductor film (8) exposed in the first opening (14a) are etched, the bottom portion (B) of the second opening (14b) is removed for exposing the conducting film (12) therein, and the exposed conducting film (12) is etched, so as to form a TFT (20) in a second step. A pixel electrode (5a), a protection masking layer (17a) and a projection (17b) are formed in a third step.
摘要:
In a liquid crystal display device, an array substrate and a CF substrate are arranged face to face with each other. A liquid crystal layer is provided between the array substrate and the CF substrate. The array substrate and the CF substrate are bonded together by a sealing member containing a photo curing material. The array substrate has a surface opposed to the CF substrate. Metal wires are provided in the circumferential portion of the opposed surface. A transparent film is disposed between the metal wires and the sealing member.
摘要:
After forming a gate electrode (4a) in a first step, a gate insulating film (5), a semiconductor film (8) and a conducting film (12) including a transparent conducting film (9) are stacked, and on the thus obtained multilayered body (18), a resist pattern (13a) including a first opening (14a) for exposing the conducting film (12) therein and a second opening (14b) having a bottom portion (B) above the gate electrode (4a) is formed. Portions of the conducting film (12) and the semiconductor film (8) exposed in the first opening (14a) are etched, the bottom portion (B) of the second opening (14b) is removed for exposing the conducting film (12) therein, and the exposed conducting film (12) is etched, so as to form a TFT (20) in a second step. A pixel electrode (5a), a protection masking layer (17a) and a projection (17b) are formed in a third step.
摘要:
In a thin-film transistor to be used in an active matrix liquid crystal display device, each of a gate signal line, a source signal line, and a drain extraction electrode has a three-layer structure. Specifically, each of these members is made up of a lower layer made of a titanium film, an intermediate layer made of an aluminum film, and an upper layer made of a titanium film containing nitrogen. Since the respective upper layers, in contact with a gate insulating film or an interlayer insulating film made of a silicon nitride film, are made of titanium films containing nitrogen, they have superior adhesion to the silicon nitride film. Consequently, film peeling, etc. during the manufacturing process can be suppressed. Further, providing the titanium film beneath the aluminum film contributes to reduction of the resistance of the aluminum film.