摘要:
The present invention provides a nonvolatile memory which includes a card controller, a reprogrammable nonvolatile memory and an IC card chip. The card controller is capable of outputting at least one of reset response information (ATR) outputted from the IC card chip in response to a reset instruction to the IC card chip and information indicative of an erase unit of a flash memory to the outside in response to a predetermined command supplied from outside. A card host is capable of causing the card controller to change an operating speed or operating frequency or the like of the IC card chip by reference to the ATR information. Upon reprogramming of memory information with respect to the reprogrammable nonvolatile memory, the card host is capable of sending write data equivalent to an amount commensurate with an erase unit to the nonvolatile memory by reference to the information indicative of the erase unit and giving write instructions.
摘要:
Disclosed is a semiconductor device including built-in interface circuits whose operations are selected in response to initialization operation from a host apparatus coupled thereto. In the semiconductor device, a first synchronous interface circuit and a second asynchronous interface circuit using differential signals, share the external terminals of the differential signals (the external differential signal terminals). For example, the semiconductor device adopts an MMC interface circuit as the first interface circuit and a USB interface circuit as the second interface circuit, while keeping the IC card interface function. The semiconductor device selects operations of the adopted interface circuits exclusively. One selection method is to enable an interface operation of the first interface circuit, upon detection of a plurality of edge changes in a clock input from an external clock terminal, which is for initializing the first interface circuit when power supply to the semiconductor device is started.
摘要:
The present invention is directed to suppress propagation of noise from an interface controller to an IC card microcomputer. A memory card of the invention includes an external terminal, an IC card terminal, an interface controller connected to the external terminal, a memory device connected to the interface controller, and an IC card microcomputer connected to the interface controller. The interface controller controls operation of the memory device and the IC card microcomputer in response to an input from the external terminal. The IC card terminal is directly connected to a connection line between the interface controller and the IC card microcomputer. When operation of the IC card microcomputer responding to an input from the IC card terminal is permitted in parallel with operation responding to an input from the external terminal, the interface controller sets an output buffer in the interface controller connected to the connection line into a high impedance state.
摘要:
A memory card is provided in which power consumption is reduced by the pull-up resistor of an input terminal and a misoperation induced by the pull-down resistor of a host apparatus is prevented. The memory card has a select terminal connected to the pull-up resistor. When the mode of the memory card is determined based on an input from the select terminal, a relatively low resistance value is selected for the pull-up resistor of the select terminal before a determination timing and the pull-up resistor is restored to an initial resistance value after the mode determination. A relatively high resistance value reduces a leakage current consumed by the pull-up resistor of the select terminal. When a pull-down resistor is connected to the terminal of a memory card host to which the memory card is attached, if the resistance value of the pull-up resistor is excessively high, it is influenced by the drawing in of a current by the pull-down resistor. If the resistance value of the pull-up resistor of the select terminal is lowered at the time of mode determination, an adverse effect of the lowering of a potential by the pull-down resistor can be circumvented.
摘要:
A memory card is provided in which power consumption is reduced by the pull-up resistor of an input terminal and a misoperation induced by the pull-down resistor of a host apparatus is prevented. The memory card has a select terminal connected to the pull-up resistor. When the mode of the memory card is determined based on an input from the select terminal, a relatively low resistance value is selected for the pull-up resistor of the select terminal before a determination timing and the pull-up resistor is restored to an initial resistance value after the mode determination. A relatively high resistance value reduces a leakage current consumed by the pull-up resistor of the select terminal. When a pull-down resistor is connected to the terminal of a memory card host to which the memory card is attached, if the resistance value of the pull-up resistor is excessively high, it is influenced by the drawing in of a current by the pull-down resistor. If the resistance value of the pull-up resistor of the select terminal is lowered at the time of mode determination, an adverse effect of the lowering of a potential by the pull-down resistor can be circumvented.
摘要:
A memory card has external interface terminals, an interface controller connected to each of the terminals, a rewritable nonvolatile memory connected to the interface controller, and a data processor connected to the interface controller. The interface controller can perform an operation based on another command supplied from the outside in parallel with the operations of transferring a command for a data process supplied from the outside to the data processor and operating it. The interface controller has plural buffers and, after completely inputting the command for a data process from an outside to a first buffer of the plural buffers, allows data related to the other command supplied from the outside to be inputted to a second buffer of the plural buffers. The memory card can receive a command data and data to be processed subsequently from the outside without the need of waiting for the completion of the communication process between the data processor and the interface controller.
摘要:
When a non-volatile memory write error occurs in a card storage device containing a non-volatile memory and an error correction circuit, write data is read from the non-volatile memory and a check is made if the error can be corrected by the error correction circuit. If the error can be corrected, the write operation is ended. If the error correction circuit cannot correct the error, substitute processing is performed to write data into some other area.
摘要:
When a non-volatile memory write error occurs in a card storage device containing a non-volatile memory and an error correction circuit, write data is read from the non-volatile memory and a check is made if the error can be corrected by the error correction circuit. If the error can be corrected, the write operation is ended. If the error correction circuit cannot correct the error, substitute processing is performed to write data into some other area.
摘要:
A memory card has external interface terminals, an interface controller connected to each of the terminals, a rewritable nonvolatile memory connected to the interface controller, and a data processor connected to the interface controller. The interface controller can perform an operation based on another command supplied from the outside in parallel with the operations of transferring a command for a data process supplied from the outside to the data processor and operating it. The interface controller has plural buffers and, after completely inputting the command for a data process from an outside to a first buffer of the plural buffers, allows data related to the other command supplied from the outside to be inputted to a second buffer of the plural buffers. The memory card can receive a command data and data to be processed subsequently from the outside without the need of waiting for the completion of the communication process between the data processor and the interface controller.
摘要:
In the initial setting of a memory card 1, the flash check data FD stored in a flash memory 2 is read out, this data FD is compared with the operation check data FD11 stored previously in the ROM, the write check data FD12 stored in the ROM 4a is written, if a fault is not detected, to the flash memory 2, and this data is read again and is compared with the write check data. FD12 of the ROM 4a. When any fault is not detected in comparison of these data, the CPU determines that the flash memory 2 is normal. Moreover, if a fault is detected in the comparison of data, the CPU sets the reset process fault data to a register 5a to set a controller 3 to the sleep mode. When the command CMD is received during this period, data comparison is executed again.
摘要翻译:在存储卡1的初始设置中,读出存储在闪速存储器2中的闪存检查数据FD,将该数据FD与先前存储在ROM中的操作检查数据FD11进行比较,存储在存储卡1中的写入检查数据FD12 如果没有检测到故障,ROM 4a被写入闪速存储器2,并且该数据被再次读取并且与写检查数据进行比较。 ROM 4a的FD12。 当比较这些数据时没有检测到任何故障时,CPU确定闪存2正常。 此外,如果在比较数据中检测到故障,则CPU将复位处理故障数据设置为寄存器5a,以将控制器3设置为睡眠模式。 当在此期间接收到命令CMD时,再次执行数据比较。