摘要:
An electron beam memory system in which a phase transition type recording film is used as an information recording medium, and for recording information, a focused electron beam is selectively projected on desired positions of the recording film so as to locally heat the recording film and cause phase transition, while for retrieving information, an electron beam having energy at a degree not causing the phase transition is projected so as to utilize the fact that reflection or diffraction of the primary electron beam projected at the retrieval differs between the recorded regions and unrecorded regions.
摘要:
In a data recording member having a data recording film which is formed on a substrate either directly or via at least one of inorganic and organic protective layers and which causes the change of atomic arrangement upon being irradiated by recording beam, the improvement wherein said data recording film has an average composition in a direction of the film thickness expressed by the following formulas:M.sub.x Te.sub.y Se.sub.z O.sub..alpha.wherein x, y, z and .alpha. are values within the ranges of 2.ltoreq.x.ltoreq.40, 30.ltoreq.y.ltoreq.95, 3.ltoreq.z.ltoreq.45, 0.ltoreq..alpha..ltoreq.20, and M is at least one element selected from the group consisting of As, Sb, Bi, S, Si, Ge, Sn, Pb, Al, Ga, In, Tl, Zn, Cd, Au, Ag, Cu, Ni, Pd, Rh, Cr, Mo, W and Ta.
摘要:
In a data recording member having a data recording film which is formed on a substrate either directly or via at least one of inorganic and organic protective layers and which causes the change of atomic arrangement upon being irradiated by recording beam, the improvement wherein said data recording film has an average composition in a direction of the film thickness expressed by the following formulas:M.sub.x Te.sub.y Se.sub.z O.sub..alpha.wherein x, y, z and .alpha. are values within the ranges of 2.ltoreq.x.ltoreq.40, 30.ltoreq.y.ltoreq.95, 3.ltoreq.z.ltoreq.45, 0.ltoreq..alpha..ltoreq.20, and M is at least one element selected from the group consisting of As, Sb, Bi, S, Si, Ge, Sn, Pb, Al, Ga, In, Tl, Zn, Cd, Au, Ag, Cu, Ni, Pd, Rh, Cr, Mo, W and Ta.
摘要:
In an information recording apparatus according to this invention, since it is not necessary to dispose any differential circuit, which was required heretofore, it is possible to fabricate it with a low cost and its error rate is also very small.Furthermore, since the mean reflectivity on the recording track does almost not vary by the fact that information is recorded there, no tracking off-set or focusing off-set is produced. Thus effects of this invention are remarkable.
摘要:
An information-recording thin film provided on a substrate directly or through a protective layer has an average composition of the thin film being represented by the general formula;A.sub.X B.sub.Y C.sub.Z D.sub..alpha. E.sub..beta. F.sub..gamma.wherein X, Y, Z, .alpha., .beta. and .gamma. are in ranges of 0.ltoreq.X
摘要:
A thin film for recording data which is formed on a substrate directly or via a protection layer, and which develops change in the arrangement of atoms upon irradiation with a recording beam, wherein an average composition in the direction of film thickness is represented by the general formula,A.sub.X B.sub.Y C.sub.Z D.sub..alpha. E.sub..beta.wherein X, Y, Z, .alpha. and .beta. are values that lie over the ranges of 0.ltoreq.X
摘要:
By recording, reproducing and erasing information by using a recording thin film of the present invention, the information can be recorded, reproduced and erased by a single beam spot and new information can be rapidly rewritten while recorded information is erased. The irradiation beam is not limited to a light beam but it may be other energy beam such as electron beam or ion beam. The record medium is not limited to a disk but it may be tape or card and is applicable to a recording thin film other than the described thin film and to other methods.By using the described recording thin film, a manufacturing process is simple and reproducible, the recording/reproducing characteristic is high and the information can be stably stored for an extended time period. The record also may be rewritten a number of times.
摘要:
An information recording thin film capable of changing an atomic configuration upon exposure to a recording beam, formed on a substrate directly or through a protective layer composed of at least one of inorganic materials and organic materials, an average composition in the film thickness direction of the information-recording thin film being represented by the following general formula;A.sub.X B.sub.Y C.sub.Z Ge.sub..alpha. Te.sub..beta.wherein X, Y, Z, .alpha. and .beta. are in ranges of 0.ltoreq.X
摘要:
A recording medium having a dummy signal area on at least one side of a recording area is used and information is recorded with a dummy signal added to at least one of the leading and trailing sides in the recorded information signal. The user data area remains unaffected by repeated overwriting so that recorded user data is reproduced correctly. In particular, the wave form distortion caused by fluidization of a recording film remains at the dummy signal area and does not affect the user data area, so that the reproduction of the target information (user data) is assured.
摘要:
An information recording medium having recording, reproducing, and rewriting characteristics better than those of prior art media. The media has a recording layer made of a material represented by the following formula: Gex−wSbyTezMw, wherein 0.13≦x≦0.22, 0.20≦y≦0.32, 0.53≦z≦0.60, 0≦w≦0.06, x+y+z=1, and M is any one of Na, Mg, Al, P, S, Cl, L, Ca, Sc, Zn, Ga, As, Se, Br, Rb, Sr, Y, Zr, Nb, Ru, Rh, Cd, In, Sn, I, Cs, Ba, La, Hf, Ta, Re, Os, Ir, Hg, Tl, Pb, Th, U, Ag, Cr, W, Mo, Pt, Co, Ni, Pd, Si, Au, Cu, V, Mn, Fe, Ti and Bi.
摘要翻译:具有比现有技术媒体更好的记录,再现和重写特性的信息记录介质。 介质具有由下式表示的材料制成的记录层:Gex-wSbyTezMw,其中0.13 <= x <= 0.22,0.20 <= y <= 0.32,0.53 <= z <=0.60,0≤w< = 0.06,x + y + z = 1,M为Na,Mg,Al,P,S,Cl,L,Ca,Sc,Zn,Ga,As,Se,Br,Rb,Sr,Y ,Zr,Nb,Ru,Rh,Cd,In,Sn,I,Cs,Ba,La,Hf,Ta,Re,Os,Ir,Hg,Tl,Pb,Th,U,Ag,Cr,W,Mo ,Pt,Co,Ni,Pd,Si,Au,Cu,V,Mn,Fe,Ti和Bi。