摘要:
By recording, reproducing and erasing information by using a recording thin film of the present invention, the information can be recorded, reproduced and erased by a single beam spot and new information can be rapidly rewritten while recorded information is erased. The irradiation beam is not limited to a light beam but it may be other energy beam such as electron beam or ion beam. The record medium is not limited to a disk but it may be tape or card and is applicable to a recording thin film other than the described thin film and to other methods.By using the described recording thin film, a manufacturing process is simple and reproducible, the recording/reproducing characteristic is high and the information can be stably stored for an extended time period. The record also may be rewritten a number of times.
摘要:
In an information recording apparatus according to this invention, since it is not necessary to dispose any differential circuit, which was required heretofore, it is possible to fabricate it with a low cost and its error rate is also very small.Furthermore, since the mean reflectivity on the recording track does almost not vary by the fact that information is recorded there, no tracking off-set or focusing off-set is produced. Thus effects of this invention are remarkable.
摘要:
An electron beam memory system in which a phase transition type recording film is used as an information recording medium, and for recording information, a focused electron beam is selectively projected on desired positions of the recording film so as to locally heat the recording film and cause phase transition, while for retrieving information, an electron beam having energy at a degree not causing the phase transition is projected so as to utilize the fact that reflection or diffraction of the primary electron beam projected at the retrieval differs between the recorded regions and unrecorded regions.
摘要:
An information-recording thin film provided on a substrate directly or through a protective layer has an average composition of the thin film being represented by the general formula;A.sub.X B.sub.Y C.sub.Z D.sub..alpha. E.sub..beta. F.sub..gamma.wherein X, Y, Z, .alpha., .beta. and .gamma. are in ranges of 0.ltoreq.X
摘要:
A thin film for recording data which is formed on a substrate directly or via a protection layer, and which develops change in the arrangement of atoms upon irradiation with a recording beam, wherein an average composition in the direction of film thickness is represented by the general formula,A.sub.X B.sub.Y C.sub.Z D.sub..alpha. E.sub..beta.wherein X, Y, Z, .alpha. and .beta. are values that lie over the ranges of 0.ltoreq.X
摘要:
An information recording thin film capable of changing an atomic configuration upon exposure to a recording beam, formed on a substrate directly or through a protective layer composed of at least one of inorganic materials and organic materials, an average composition in the film thickness direction of the information-recording thin film being represented by the following general formula;A.sub.X B.sub.Y C.sub.Z Ge.sub..alpha. Te.sub..beta.wherein X, Y, Z, .alpha. and .beta. are in ranges of 0.ltoreq.X
摘要:
In a data recording member having a data recording film which is formed on a substrate either directly or via at least one of inorganic and organic protective layers and which causes the change of atomic arrangement upon being irradiated by recording beam, the improvement wherein said data recording film has an average composition in a direction of the film thickness expressed by the following formulas:M.sub.x Te.sub.y Se.sub.z O.sub..alpha.wherein x, y, z and .alpha. are values within the ranges of 2.ltoreq.x.ltoreq.40, 30.ltoreq.y.ltoreq.95, 3.ltoreq.z.ltoreq.45, 0.ltoreq..alpha..ltoreq.20, and M is at least one element selected from the group consisting of As, Sb, Bi, S, Si, Ge, Sn, Pb, Al, Ga, In, Tl, Zn, Cd, Au, Ag, Cu, Ni, Pd, Rh, Cr, Mo, W and Ta.
摘要:
In a data recording member having a data recording film which is formed on a substrate either directly or via at least one of inorganic and organic protective layers and which causes the change of atomic arrangement upon being irradiated by recording beam, the improvement wherein said data recording film has an average composition in a direction of the film thickness expressed by the following formulas:M.sub.x Te.sub.y Se.sub.z O.sub..alpha.wherein x, y, z and .alpha. are values within the ranges of 2.ltoreq.x.ltoreq.40, 30.ltoreq.y.ltoreq.95, 3.ltoreq.z.ltoreq.45, 0.ltoreq..alpha..ltoreq.20, and M is at least one element selected from the group consisting of As, Sb, Bi, S, Si, Ge, Sn, Pb, Al, Ga, In, Tl, Zn, Cd, Au, Ag, Cu, Ni, Pd, Rh, Cr, Mo, W and Ta.
摘要:
An information recording medium has a thin-film recording layer and a reflective layer that reflects a laser beam. The recording layer can be composed of an inorganic substance whose optical constant changes when exposed to a laser beam due to the change of its atomic arrangement. The recording layer can also be of an organic substance that deforms when exposed to a laser beam. The medium reflectivity, with respect to the reproduction laser beam exposure from the substrate side, is at least 65 percent on either of the recorded and unrecorded marks, and not more than 45 percent from the other of the recorded and unrecorded marks. In addition, the reflective-layer reflectivity, with respect to the reproduction laser beam, is at least 85 percent. The information recording medium additionally features excellent recording, erasing, and reproduction characteristics, with low recording power and high recording sensitivity during recording, and can even be read by a CD drive or the like.
摘要:
An information recording medium having recording, reproducing, and rewriting characteristics better than those of prior art media. The media has a recording layer made of a material represented by the following formula: Gex−wSbyTezMw, wherein 0.13≦x≦0.22, 0.20≦y≦0.32, 0.53≦z≦0.60, 0≦w≦0.06, x+y+z=1, and M is any one of Na, Mg, Al, P, S, Cl, L, Ca, Sc, Zn, Ga, As, Se, Br, Rb, Sr, Y, Zr, Nb, Ru, Rh, Cd, In, Sn, I, Cs, Ba, La, Hf, Ta, Re, Os, Ir, Hg, Tl, Pb, Th, U, Ag, Cr, W, Mo, Pt, Co, Ni, Pd, Si, Au, Cu, V, Mn, Fe, Ti and Bi.
摘要翻译:具有比现有技术媒体更好的记录,再现和重写特性的信息记录介质。 介质具有由下式表示的材料制成的记录层:Gex-wSbyTezMw,其中0.13 <= x <= 0.22,0.20 <= y <= 0.32,0.53 <= z <=0.60,0≤w< = 0.06,x + y + z = 1,M为Na,Mg,Al,P,S,Cl,L,Ca,Sc,Zn,Ga,As,Se,Br,Rb,Sr,Y ,Zr,Nb,Ru,Rh,Cd,In,Sn,I,Cs,Ba,La,Hf,Ta,Re,Os,Ir,Hg,Tl,Pb,Th,U,Ag,Cr,W,Mo ,Pt,Co,Ni,Pd,Si,Au,Cu,V,Mn,Fe,Ti和Bi。