利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

31 条记录 (耗时 0.023 秒)

    Method for measuring crystal defect and equipment using the same
    1.
    发明授权
    Method for measuring crystal defect and equipment using the same 有权
    测量晶体缺陷的方法及使用其的设备

    公开(公告)号：US6108079A

    公开(公告)日：2000-08-22

    申请号：US245195

    申请日：1999-02-05

    申请人： Muneo Maeshima ,  Kazuo Takeda ,  Isao Nemoto ,  Shigeru Matsui ,  Yoshitaka Kodama

    发明人： Muneo Maeshima ,  Kazuo Takeda ,  Isao Nemoto ,  Shigeru Matsui ,  Yoshitaka Kodama

    IPC分类号： G01N21/88 ,  G01N21/25 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  H01L21/66 ,  G01N21/00 ,  G01N21/86

    CPC分类号： G01N21/9501 ,  H01L22/12 ,  H01L2924/0002

    摘要： In order to measure an inner defect of a sample with a certain high accuracy even if the sample surface of the moved up and down by flatness irregularity of the sample and problem on accuracy of the sample movement stage, incident light beams having two wavelength and respective different penetration depths for the sample are slantingly irradiated on the surface of the moving sample 15 from irradiation optical systems 4, 8, and the inner defect of the sample is measured by detecting the scattering light occurred from the interior of the sample with a detection optical system 9 arranged over the sample surface. A distance measurement means 14 is located in an upstream of a movement direction of said sample than said irradiation optical system 4, 8 and said detection optical system 9, thereby a surface height of said sample is measured. When a measured point on sample measured by the distance measurement means 14 is arrived at a lower part of the detection optical system 9, height positions of the irradiation optical system and the detection optical system are controlled by piezo electric elements 11,12,13 so that the irradiation optical system and the detection optical system are located at predetermined positions relating to the measured point.

    摘要翻译： 为了以一定的高精度测量样品的内部缺陷，即使样品的平坦度不均匀性上下移动的样品表面和样品移动台的精度问题，具有两个波长的入射光束和相应的 样品的不同穿透深度从照射光学系统4,8倾斜地照射在移动样品15的表面上，并且通过用检测光学检测从样品内部发生的散射光来测量样品的内部缺陷 系统9布置在样品表面上。 距离测量装置14位于所述样品的移动方向的上游，比所述照射光学系统4,8和所述检测光学系统9，从而测量所述样品的表面高度。 当通过距离测量装置14测量的样品上的测量点到达检测光学系统9的下部时，照射光学系统和检测光学系统的高度位置由压电元件11,12,13所控制 照射光学系统和检测光学系统位于与测量点相关的预定位置处。

    Defect inspection apparatus for silicon wafer
    2.
    发明授权
    Defect inspection apparatus for silicon wafer 有权
    硅片缺陷检查装置

    公开(公告)号：US06256092B1

    公开(公告)日：2001-07-03

    申请号：US09198093

    申请日：1998-11-23

    申请人： Koji Tomita ,  Muneo Maeshima ,  Shigeru Matsui ,  Yoshitaka Kodama ,  Hitoshi Komuro ,  Kazuo Takeda

    发明人： Koji Tomita ,  Muneo Maeshima ,  Shigeru Matsui ,  Yoshitaka Kodama ,  Hitoshi Komuro ,  Kazuo Takeda

    IPC分类号： G01N2188

    CPC分类号： G01N21/9505 ,  G01N21/9501

    摘要： A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.

    摘要翻译： 一种缺陷检查装置，用于根据来自通过将光束照射在样品上的样品的光信息，检测存在于半导体样品表面和/或样品内部的缺陷，该检测装置包括检测装置， 存在缺陷的深度方向和基于光信息的缺陷分布; 用于设置存在缺陷的深度方向上的位置的设定装置; 以及用于显示由检测装置获得的缺陷的分布的装置，显示装置显示与由设置装置设置的深度方向上的位置相对应的缺陷的分布。

    Defect inspection method and apparatus for silicon wafer
    3.
    发明授权
    Defect inspection method and apparatus for silicon wafer 失效
    硅片缺陷检查方法及装置

    公开(公告)号：US06683683B2

    公开(公告)日：2004-01-27

    申请号：US10084059

    申请日：2002-02-28

    申请人： Koji Tomita ,  Muneo Maeshima ,  Shigeru Matsui ,  Yoshitaka Kodama ,  Hitoshi Komuro ,  Kazuo Takeda

    发明人： Koji Tomita ,  Muneo Maeshima ,  Shigeru Matsui ,  Yoshitaka Kodama ,  Hitoshi Komuro ,  Kazuo Takeda

    IPC分类号： G01N2188

    CPC分类号： G01N21/9505 ,  G01N21/9501

    摘要： A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.

    摘要翻译： 提供了一种用于根据从将样本照射光束获得的样本的光信息检测存在于半导体样品表面和/或样品内部的缺陷的缺陷检查装置，其包括检测装置， 存在缺陷的深度方向和基于光信息的缺陷分布; 用于设置存在缺陷的深度方向上的位置的设定装置; 以及用于显示由检测装置获得的缺陷的分布的装置，显示装置显示与由设置装置设置的深度方向上的位置相对应的缺陷的分布。

    Wafer inspecting apparatus
    6.
    发明授权
    Wafer inspecting apparatus 有权
    晶圆检查仪

    公开(公告)号：US06191849B1

    公开(公告)日：2001-02-20

    申请号：US09219873

    申请日：1998-12-24

    申请人： Muneo Maeshima ,  Kazuo Takeda ,  Shigeru Matsui

    发明人： Muneo Maeshima ,  Kazuo Takeda ,  Shigeru Matsui

    IPC分类号： G01N2147

    CPC分类号： G01N21/9501 ,  G01N21/9505

    摘要： Disclosed is a wafer inspecting apparatus suitable to determine whether a scattering substance is a surface foreign matter or an internal defect even if the particle size of the scattering substance is smaller than the wavelength of irradiation rays used for inspection. The wafer is obliquely irradiated with irradiation rays at the Brewster angle, and scattered rays which are scattered from a scattering substance on or in the wafer are detected at and angle 0° and an angle of the Brewster angle or more by detectors. Then, it is determined whether the scattering substance is a surface foreign matter or an internal defect on the basis of a ratio between the intensities of the scattered rays detected by the detectors. The intensity of scattered rays which are scattered from a surface foreign matter and detected at an angle of the Brewster angle or more is larger than the intensity of scattered rays which are scattered from the foreign matter and detected at an angle 0°, and the intensity of scattered rays which are scattered from an internal defect and detected at an angle of the Brewster angle or more is smaller than the intensity of scattered rays which are scattered from the internal defect and detected at an angle 0°. This makes it possible to distinguish the surface foreign matter and the internal defect from each other.

    摘要翻译： 公开了一种适用于确定散射物质是表面异物还是内部缺陷的晶片检查装置，即使散射物质的粒径小于用于检查的照射射线的波长。 以布鲁斯特角度的照射光线倾斜照射晶片，从晶片上或晶片上的散射物质散射的散射光线以0°的角度和布鲁斯特角度以上的角度检测。 然后，基于由检测器检测到的散射光线的强度之间的比例来确定散射物质是表面异物还是内部缺陷。 从表面异物散射并以布鲁斯特角度以上的角度检测的散射光的强度大于从异物散射并以0°的角度检测的散射光的强度，强度 从内部缺陷散射并以布鲁斯特角度以上的角度检测的散射光的散射光小于从内部缺陷散射并以0°的角度检测的散射光的强度。 这使得可以将表面异物和内部缺陷彼此区分开。

    Defect inspection apparatus for silicon wafer
    7.
    发明授权
    Defect inspection apparatus for silicon wafer 有权
    硅片缺陷检查装置

    公开(公告)号：US6157444A

    公开(公告)日：2000-12-05

    申请号：US198644

    申请日：1998-11-24

    申请人： Koji Tomita ,  Muneo Maeshima ,  Shigeru Matsui ,  Hitoshi Komuro ,  Kazuo Takeda

    发明人： Koji Tomita ,  Muneo Maeshima ,  Shigeru Matsui ,  Hitoshi Komuro ,  Kazuo Takeda

    IPC分类号： G01N21/95 ,  G01N21/88

    CPC分类号： G01N21/9505 ,  G01N21/9501

    摘要： In order to easily evaluate defects of the silicon wafer affecting the characteristic of a device, the present invention provides a defect inspection apparatus for detecting defects existing on a surface of a sample and/or inside the sample, which comprises a display apparatus for displaying a distribution of the defects on a graph having coordinate axes of distance from a central position of the sample and the depth where the defect exists based on the depth information and the positional information obtained by a detecting means.

    摘要翻译： 为了容易地评估影响器件特性的硅晶片的缺陷，本发明提供了一种用于检测存在于样品表面和/或样品内部的缺陷的缺陷检查装置，其包括显示装置 基于由检测装置获得的深度信息和位置信息，在具有距离样本的中心位置的距离的坐标轴和存在缺陷的深度的图形上的缺陷的分布。

    Defect assessing apparatus and method, and semiconductor manufacturing method
    8.
    发明授权
    Defect assessing apparatus and method, and semiconductor manufacturing method 有权
    缺陷评估装置和方法以及半导体制造方法

    公开(公告)号：US06226079B1

    公开(公告)日：2001-05-01

    申请号：US09161393

    申请日：1998-09-29

    申请人： Kazuo Takeda ,  Makoto Ohkura ,  Seiichi Isomae ,  Kyoko Minowa ,  Muneo Maeshima ,  Shigeru Matsui ,  Yasushi Matsuda ,  Hirofumi Shimizu

    发明人： Kazuo Takeda ,  Makoto Ohkura ,  Seiichi Isomae ,  Kyoko Minowa ,  Muneo Maeshima ,  Shigeru Matsui ,  Yasushi Matsuda ,  Hirofumi Shimizu

    IPC分类号： G01N2100

    CPC分类号： G01N21/9501 ,  G01N21/47

    摘要： A defect assessing apparatus and method and a semiconductor manufacturing method for revealing the relationship between the size and depth of defects is disclosed. A detecting optical system is provided for detecting the intensity of scattered light from a defect generated by the shorter wavelength one of the light rays of at least two different wavelengths emitted from irradiating optical systems and that of scattered light from the defect generated by the longer wavelength one of same. A calculating means is provided for determining, from the scattered light intensity derived from the shorter wavelength ray and that derived form the longer wavelength ray, both detected by the detecting optical system, a value corresponding to the defect size and another value corresponding to the defect depth. A display means is provided for displaying a distribution revealing the relationship between defect size and defect depth on the basis of the value corresponding to the defect size and the value corresponding to the defect depth, both determined by the calculating means.

    摘要翻译： 公开了一种用于揭示缺陷的尺寸和深度之间的关系的缺陷评估装置和方法以及半导体制造方法。 提供了一种检测光学系统，用于检测由照射光学系统发射的至少两种不同波长的较短波长的一个光线产生的缺陷的散射光的强度，以及来自由较长波长产生的缺陷的散射光 一个是相同的 提供了一种计算装置，用于根据由检测光学系统检测的来自较短波长的衍射的散射光强度和由较长波长的光导出的值，确定对应于缺陷尺寸的值和对应于缺陷的另一个值 深度。 提供显示装置，用于根据由计算装置确定的缺陷尺寸和对应于缺陷深度的值，显示出显示缺陷尺寸和缺陷深度之间的关系的分布。

    Automatic analysis device
    10.
    发明授权
    Automatic analysis device 有权

    公开(公告)号：US10302641B2

    公开(公告)日：2019-05-28

    申请号：US14766377

    申请日：2014-01-23

    申请人： Shunichiro Nobuki ,  Muneo Maeshima ,  Terumi Tamura ,  Kenta Imai

    发明人： Shunichiro Nobuki ,  Muneo Maeshima ,  Terumi Tamura ,  Kenta Imai

    IPC分类号： G01N21/05 ,  G01N21/69 ,  G01N21/76 ,  G01N27/74 ,  G01N35/00 ,  G01N33/543 ,  G01N33/561

    摘要： An analyzing device of the present invention is provided with a flow chamber that a fluid including magnetic particles associated with a labeling substance flows from a fluid inlet to a fluid outlet, magnetic trap means to apply a magnetic field for trapping the magnetic particles to the fluid in the flow chamber, a working electrode and a counter electrode to apply a voltage to the magnetic particles trapped by the magnetic trap means, and to emit a luminescence, a light detection element to detect a luminescence derived from the labeling substance on the magnetic particles trapped in the flow chamber, and regulating means to regulate a region that the light detection element detects the luminescence derived from the labeling substance on a part of magnetic particles of them trapped by the magnetic trap means.