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    DEVICE FOR CORRECTING DIFFRACTION ABERRATION OF ELECTRON BEAM
    1.
    发明申请
    DEVICE FOR CORRECTING DIFFRACTION ABERRATION OF ELECTRON BEAM 有权
    用于校正电子束的衍射脱落的装置

    公开(公告)号：US20140124664A1

    公开(公告)日：2014-05-08

    申请号：US13977139

    申请日：2011-12-26

    申请人： Muneyuki Fukuda ,  Yoichi Ose ,  Mitsugu Sato ,  Hiroyuki Ito ,  Hiroshi Suzuki ,  Naomasa Suzuki

    发明人： Muneyuki Fukuda ,  Yoichi Ose ,  Mitsugu Sato ,  Hiroyuki Ito ,  Hiroshi Suzuki ,  Naomasa Suzuki

    IPC分类号： H01J37/10 ,  H01J37/26 ,  H01J37/147

    CPC分类号： H01J37/10 ,  H01J37/147 ,  H01J37/153 ,  H01J37/26 ,  H01J2237/1534 ,  H01J2237/2614

    摘要： A diffraction aberration corrector formed by the multipole of the solenoid coil ring and having a function of adjusting the degree of orthogonality or axial shift of the vector potential with respect to the beam axis. In order to cause a phase difference, the diffraction aberration corrector that induces a vector potential, which is perpendicular to the beam axis and has a symmetrical distribution within the orthogonal plane with respect to the beam axis, is provided near the objective aperture and the objective lens. A diffracted wave traveling in a state of being inclined from the beam axis passes through the ring of the magnetic flux. Since the phase difference within the beam diameter is increased by the Aharonov-Bohm effect due to the vector potential, the intensity of the electron beam on the sample is suppressed.

    摘要翻译： 由电磁线圈环的多极形成的衍射像差校正器，具有调整矢量电势相对于光束轴线的正交性或轴向移动的功能的功能。 为了产生相位差，在物镜孔附近设置衍射像差校正器，该衍射像差校正器垂直于光束轴并且在相对于光束轴线的正交平面内具有对称分布的矢量电位， 镜片。 在从光束轴倾斜的状态下行进的衍射波通过磁通的环。 由于由于向量电位而使光束直径内的相位差增加了Aharonov-Bohm效应，所以抑制了样品上电子束的强度。

    Device for correcting diffraction aberration of electron beam
    2.
    发明授权
    Device for correcting diffraction aberration of electron beam 有权
    用于校正电子束衍射像差的装置

    公开(公告)号：US09123501B2

    公开(公告)日：2015-09-01

    申请号：US13977139

    申请日：2011-12-26

    申请人： Muneyuki Fukuda ,  Yoichi Ose ,  Mitsugu Sato ,  Hiroyuki Ito ,  Hiroshi Suzuki ,  Naomasa Suzuki

    发明人： Muneyuki Fukuda ,  Yoichi Ose ,  Mitsugu Sato ,  Hiroyuki Ito ,  Hiroshi Suzuki ,  Naomasa Suzuki

    IPC分类号： H01J37/14 ,  H01J37/26 ,  H01J37/10 ,  H01J37/153 ,  H01J37/147

    CPC分类号： H01J37/10 ,  H01J37/147 ,  H01J37/153 ,  H01J37/26 ,  H01J2237/1534 ,  H01J2237/2614

    摘要： A diffraction aberration corrector formed by the multipole of the solenoid coil ring and having a function of adjusting the degree of orthogonality or axial shift of the vector potential with respect to the beam axis. In order to cause a phase difference, the diffraction aberration corrector that induces a vector potential, which is perpendicular to the beam axis and has a symmetrical distribution within the orthogonal plane with respect to the beam axis, is provided near the objective aperture and the objective lens. A diffracted wave traveling in a state of being inclined from the beam axis passes through the ring of the magnetic flux. Since the phase difference within the beam diameter is increased by the Aharonov-Bohm effect due to the vector potential, the intensity of the electron beam on the sample is suppressed.

    摘要翻译： 由电磁线圈环的多极形成的衍射像差校正器，具有调整矢量电势相对于光束轴线的正交性或轴向移动的功能的功能。 为了产生相位差，在物镜孔附近设置衍射像差校正器，该衍射像差校正器垂直于光束轴并且在相对于光束轴线的正交平面内具有对称分布的矢量电位， 镜片。 在从光束轴倾斜的状态下行进的衍射波通过磁通的环。 由于由于向量电位而使光束直径内的相位差增加了Aharonov-Bohm效应，所以抑制了样品上电子束的强度。

    Electron Beam Apparatus and Electron Beam Inspection Method
    3.
    发明申请
    Electron Beam Apparatus and Electron Beam Inspection Method 有权
    电子束设备和电子束检测方法

    公开(公告)号：US20120261574A1

    公开(公告)日：2012-10-18

    申请号：US13530797

    申请日：2012-06-22

    申请人： Muneyuki Fukuda ,  Tomoyasu Shojo ,  Mitsugu Sato ,  Atsuko Fukada ,  Naomasa Suzuki ,  Ichiro Tachibana

    发明人： Muneyuki Fukuda ,  Tomoyasu Shojo ,  Mitsugu Sato ,  Atsuko Fukada ,  Naomasa Suzuki ,  Ichiro Tachibana

    IPC分类号： H01J37/26

    CPC分类号： H01J37/28 ,  H01J37/244 ,  H01J2237/221 ,  H01J2237/2444 ,  H01J2237/2448 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/24495

    摘要： An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an E×B deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member.

    摘要翻译： 一种电子束装置，包括放置样品的样品台和电子光学系统。 电子光学系统包括：电子枪，其产生一次电子束，将一次电子束收敛在样品上的浸没物镜;将主光束照射产生的二次粒子分离的E×B偏转器; 来自主光束的光轴的样品，二次粒子碰撞的反射部件，位于反射部件下方的辅助电极，多个附带的粒子检测器，其选择性地检测速度分量和方位分量 由二次粒子与反射部件碰撞产生的三元粒子，以及位于反射部件上方的中心检测器。

    Inspection method and inspection apparatus using charged particle beam
    4.
    发明授权
    Inspection method and inspection apparatus using charged particle beam 有权
    使用带电粒子束的检查方法和检查装置

    公开(公告)号：US07449690B2

    公开(公告)日：2008-11-11

    申请号：US11349974

    申请日：2006-02-09

    申请人： Hidetoshi Nishiyama ,  Muneyuki Fukuda ,  Noritsugu Takahashi ,  Mitsugu Sato ,  Atsuko Fukada ,  Naomasa Suzuki

    发明人： Hidetoshi Nishiyama ,  Muneyuki Fukuda ,  Noritsugu Takahashi ,  Mitsugu Sato ,  Atsuko Fukada ,  Naomasa Suzuki

    IPC分类号： G01N23/00 ,  G21K7/00

    CPC分类号： H01J37/244 ,  H01J37/28 ,  H01J2237/24495 ,  H01J2237/2817

    摘要： To establish a technique that enables sorting of the elevation and azimuth angle in the direction of emitting secondary electrons and obtaining images with emphasized contrast, in order to perform the review and analysis of shallow asperities and microscopic foreign particles in a wafer inspection during the manufacture of semiconductor devices, an electromagnetic overlapping objective lens is used to achieve high resolution, an electron beam is narrowly focused using the objective lens, an electric field for accelerating secondary electrons in the vicinity of a wafer in order to suppress the dependence on secondary electron energy of the rotation of secondary electrons generated by irradiation of the electron beam, a ring-shaped detector plate is disposed between an electron source and the objective lens, and the low angle components of the elevation angle of the secondary electrons, as viewed from the place of generation, and the high angle components are separated and also the azimuth components are separated and detected.

    摘要翻译： 为了建立能够在发射二次电子的方向上对高程和方位角进行排序并获得具有强调对比度的图像的技术，以便在制造期间对晶片检查中的浅凹凸和微观异物进行检查和分析 半导体器件使用电磁重叠物镜实现高分辨率，电子束使用物镜窄聚焦，用于加速晶片附近的二次电子的电场，以抑制对二次电子能量的依赖性 通过电子束的照射产生的二次电子的旋转，环状检测器板设置在电子源和物镜之间，并且从二次电子的位置观察二次电子的仰角的低角分量 并且高角度分量被分离，也是azimu 分离和检测。

    Electron beam apparatus and electron beam inspection method
    5.
    发明授权
    Electron beam apparatus and electron beam inspection method 有权
    电子束装置和电子束检查方法

    公开(公告)号：US08431893B2

    公开(公告)日：2013-04-30

    申请号：US13530797

    申请日：2012-06-22

    申请人： Muneyuki Fukuda ,  Tomoyasu Shojo ,  Mitsugu Sato ,  Atsuko Fukada ,  Naomasa Suzuki ,  Ichiro Tachibana

    发明人： Muneyuki Fukuda ,  Tomoyasu Shojo ,  Mitsugu Sato ,  Atsuko Fukada ,  Naomasa Suzuki ,  Ichiro Tachibana

    IPC分类号： H01J37/28

    CPC分类号： H01J37/28 ,  H01J37/244 ,  H01J2237/221 ,  H01J2237/2444 ,  H01J2237/2448 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/24495

    摘要： An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an E×B deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member.

    摘要翻译： 一种电子束装置，包括放置样品的样品台和电子光学系统。 电子光学系统包括：电子枪，其产生一次电子束，将一次电子束收敛在样品上的浸没物镜;将主光束照射产生的二次粒子分离的E×B偏转器; 来自主光束的光轴的样品，二次粒子碰撞的反射部件，位于反射部件下方的辅助电极，多个附带的粒子检测器，其选择性地检测速度分量和方位分量 由二次粒子与反射部件碰撞产生的三元粒子，以及位于反射部件上方的中心检测器。

    Inspection method and inspection system using charged particle beam
    6.
    发明授权
    Inspection method and inspection system using charged particle beam 有权
    使用带电粒子束的检查方法和检查系统

    公开(公告)号：US08153969B2

    公开(公告)日：2012-04-10

    申请号：US12323167

    申请日：2008-11-25

    申请人： Atsuko Fukada ,  Mitsugu Sato ,  Naomasa Suzuki ,  Hidetoshi Nishiyama ,  Muneyuki Fukuda ,  Noritsugu Takahashi

    发明人： Atsuko Fukada ,  Mitsugu Sato ,  Naomasa Suzuki ,  Hidetoshi Nishiyama ,  Muneyuki Fukuda ,  Noritsugu Takahashi

    IPC分类号： G01N23/00

    CPC分类号： G01N23/2251 ,  H01J37/147 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/1501 ,  H01J2237/1508 ,  H01J2237/2449 ,  H01J2237/24507

    摘要： In an electric immersion lens having high resolution capability, secondary electrons generated from a specimen are accelerated to suppress the dependency of rotational action of the secondary electrons applied thereto by an objective lens upon energy levels of the secondary electrons and when selectively detecting low and high angle components of elevation and azimuth as viewed from a secondary electron generation site by means of an annular detector interposed between an electron source and the objective lens, the secondary electrons are adjusted and deflected by means of an E×B deflector such that the center axis of secondary electrons converged finely under acceleration is made to be coincident with the center axis of a low elevation signal detection system and the secondary electrons are deviated from an aperture of a high elevation signal detection system.

    摘要翻译： 在具有高分辨能力的电浸透镜中，加速从样本产生的二次电子，以抑制由物镜施加到其上的二次电子的旋转作用对二次电子的能级的依赖性，并且当选择性地检测低角度和高角度时 通过设置在电子源和物镜之间的环形检测器从二次电子产生位置观察的仰角和方位的分量，二次电子通过E×B偏转器被调节和偏转，使得中心轴线 在加速度下精细收敛的二次电子与低仰角信号检测系统的中心轴一致，二次电子偏离高仰角信号检测系统的孔径。

    Electron beam apparatus and electron beam inspection method
    7.
    发明授权
    Electron beam apparatus and electron beam inspection method 失效
    电子束装置和电子束检查方法

    公开(公告)号：US08207498B2

    公开(公告)日：2012-06-26

    申请号：US12985633

    申请日：2011-01-06

    申请人： Muneyuki Fukuda ,  Tomoyasu Shojo ,  Mitsugu Sato ,  Atsuko Fukada ,  Naomasa Suzuki ,  Ichiro Tachibana

    发明人： Muneyuki Fukuda ,  Tomoyasu Shojo ,  Mitsugu Sato ,  Atsuko Fukada ,  Naomasa Suzuki ,  Ichiro Tachibana

    IPC分类号： H01J37/28

    CPC分类号： H01J37/28 ,  H01J37/244 ,  H01J2237/221 ,  H01J2237/2444 ,  H01J2237/2448 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/24495

    摘要： An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an ExB deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member.

    摘要翻译： 一种电子束装置，包括放置样品的样品台和电子光学系统。 电子光学系统包括产生一次电子束的电子枪，将一次电子束收敛在样品上的浸没物镜，将一次束照射产生的二次粒子分离为样品的ExB偏转器 从一次光束的光轴，二次粒子碰撞的反射部件，位于反射部件下方的辅助电极，多个附带的粒子检测器，其选择性地检测三元的速度分量和方位分量 由二次粒子与反射部件碰撞而产生的粒子和位于反射部件上方的中心检测器。

    Electron Beam Apparatus and Electron Beam Inspection Method
    9.
    发明申请
    Electron Beam Apparatus and Electron Beam Inspection Method 有权
    电子束设备和电子束检测方法

    公开(公告)号：US20080099673A1

    公开(公告)日：2008-05-01

    申请号：US11877715

    申请日：2007-10-24

    申请人： Muneyuki Fukuda ,  Tomoyasu Shojo ,  Mitsugu Sato ,  Atsuko Fukada ,  Naomasa Suzuki ,  Ichiro Tachibana

    发明人： Muneyuki Fukuda ,  Tomoyasu Shojo ,  Mitsugu Sato ,  Atsuko Fukada ,  Naomasa Suzuki ,  Ichiro Tachibana

    IPC分类号： G21K5/10

    CPC分类号： H01J37/28 ,  H01J37/244 ,  H01J2237/221 ,  H01J2237/2444 ,  H01J2237/2448 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/24495

    摘要： The present invention provides a charged-particle beam inspection technology that enables to acquire a shadow contrast enhanced image, and to detect a shallow roughness with sufficient sensitively, which is caused by a micro-scale or nano-scale foreign matter in an inspection of a semiconductor device having a circuit pattern or the like. Immersion objective lens is employed as an objective lens for the high-resolution observation. A converged electron beam is obtained due to the objective lens. An assist electrode, a right detector and a left detector are provided in the objective lens. A velocity component of a secondary electron caused by the irradiation of the sample with an electron beam is discriminated. An azimuth component is further discriminated.

    摘要翻译： 本发明提供了一种带电粒子束检查技术，其能够获得阴影对比度增强图像，并且在检查中由微尺度或纳米级异物引起的足够敏感地检测浅的粗糙度 具有电路图案等的半导体器件。 浸入式物镜被用作用于高分辨率观察的物镜。 由于物镜得到会聚的电子束。 辅助电极，右检测器和左检测器设置在物镜中。 鉴别由电子束照射样品引起的二次电子的速度分量。 进一步鉴别方位分量。