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    DEVICE FOR CORRECTING DIFFRACTION ABERRATION OF ELECTRON BEAM
    1.
    发明申请
    DEVICE FOR CORRECTING DIFFRACTION ABERRATION OF ELECTRON BEAM 有权
    用于校正电子束的衍射脱落的装置

    公开(公告)号：US20140124664A1

    公开(公告)日：2014-05-08

    申请号：US13977139

    申请日：2011-12-26

    申请人： Muneyuki Fukuda ,  Yoichi Ose ,  Mitsugu Sato ,  Hiroyuki Ito ,  Hiroshi Suzuki ,  Naomasa Suzuki

    发明人： Muneyuki Fukuda ,  Yoichi Ose ,  Mitsugu Sato ,  Hiroyuki Ito ,  Hiroshi Suzuki ,  Naomasa Suzuki

    IPC分类号： H01J37/10 ,  H01J37/26 ,  H01J37/147

    CPC分类号： H01J37/10 ,  H01J37/147 ,  H01J37/153 ,  H01J37/26 ,  H01J2237/1534 ,  H01J2237/2614

    摘要： A diffraction aberration corrector formed by the multipole of the solenoid coil ring and having a function of adjusting the degree of orthogonality or axial shift of the vector potential with respect to the beam axis. In order to cause a phase difference, the diffraction aberration corrector that induces a vector potential, which is perpendicular to the beam axis and has a symmetrical distribution within the orthogonal plane with respect to the beam axis, is provided near the objective aperture and the objective lens. A diffracted wave traveling in a state of being inclined from the beam axis passes through the ring of the magnetic flux. Since the phase difference within the beam diameter is increased by the Aharonov-Bohm effect due to the vector potential, the intensity of the electron beam on the sample is suppressed.

    摘要翻译： 由电磁线圈环的多极形成的衍射像差校正器，具有调整矢量电势相对于光束轴线的正交性或轴向移动的功能的功能。 为了产生相位差，在物镜孔附近设置衍射像差校正器，该衍射像差校正器垂直于光束轴并且在相对于光束轴线的正交平面内具有对称分布的矢量电位， 镜片。 在从光束轴倾斜的状态下行进的衍射波通过磁通的环。 由于由于向量电位而使光束直径内的相位差增加了Aharonov-Bohm效应，所以抑制了样品上电子束的强度。

    Device for correcting diffraction aberration of electron beam
    2.
    发明授权
    Device for correcting diffraction aberration of electron beam 有权
    用于校正电子束衍射像差的装置

    公开(公告)号：US09123501B2

    公开(公告)日：2015-09-01

    申请号：US13977139

    申请日：2011-12-26

    申请人： Muneyuki Fukuda ,  Yoichi Ose ,  Mitsugu Sato ,  Hiroyuki Ito ,  Hiroshi Suzuki ,  Naomasa Suzuki

    发明人： Muneyuki Fukuda ,  Yoichi Ose ,  Mitsugu Sato ,  Hiroyuki Ito ,  Hiroshi Suzuki ,  Naomasa Suzuki

    IPC分类号： H01J37/14 ,  H01J37/26 ,  H01J37/10 ,  H01J37/153 ,  H01J37/147

    CPC分类号： H01J37/10 ,  H01J37/147 ,  H01J37/153 ,  H01J37/26 ,  H01J2237/1534 ,  H01J2237/2614

    摘要： A diffraction aberration corrector formed by the multipole of the solenoid coil ring and having a function of adjusting the degree of orthogonality or axial shift of the vector potential with respect to the beam axis. In order to cause a phase difference, the diffraction aberration corrector that induces a vector potential, which is perpendicular to the beam axis and has a symmetrical distribution within the orthogonal plane with respect to the beam axis, is provided near the objective aperture and the objective lens. A diffracted wave traveling in a state of being inclined from the beam axis passes through the ring of the magnetic flux. Since the phase difference within the beam diameter is increased by the Aharonov-Bohm effect due to the vector potential, the intensity of the electron beam on the sample is suppressed.

    摘要翻译： 由电磁线圈环的多极形成的衍射像差校正器，具有调整矢量电势相对于光束轴线的正交性或轴向移动的功能的功能。 为了产生相位差，在物镜孔附近设置衍射像差校正器，该衍射像差校正器垂直于光束轴并且在相对于光束轴线的正交平面内具有对称分布的矢量电位， 镜片。 在从光束轴倾斜的状态下行进的衍射波通过磁通的环。 由于由于向量电位而使光束直径内的相位差增加了Aharonov-Bohm效应，所以抑制了样品上电子束的强度。

    Charged Particle Beam Microscope
    3.
    发明申请
    Charged Particle Beam Microscope 有权
    带电粒子束显微镜

    公开(公告)号：US20130126733A1

    公开(公告)日：2013-05-23

    申请号：US13812899

    申请日：2011-08-08

    申请人： Muneyuki Fukuda ,  Naomasa Suzuki ,  Tomoyasu Shojo ,  Noritsugu Takahashi ,  Hiroshi Suzuki ,  Hiroshi Makino

    发明人： Muneyuki Fukuda ,  Naomasa Suzuki ,  Tomoyasu Shojo ,  Noritsugu Takahashi ,  Hiroshi Suzuki ,  Hiroshi Makino

    IPC分类号： H01J37/26

    CPC分类号： H01J37/263 ,  G01N23/22 ,  H01J37/222 ,  H01J37/28

    摘要： This charged particle beam microscope is characterized by being provided with selection means (153, 155) for a measurement processing method for detected particles (118) and by this means selecting a different measurement processing method for a scanning region with a large number of secondary electrons (115) emitted from a sample (114) and for a region with a small number of secondary electrons. Thus, in sample scanning using a charged particle beam microscope, an image in which the contrast of bottom holes and channel bottoms with few emitted secondary electrons is emphasized and images that emphasize shadow contrast can be acquired in a short period of time.

    摘要翻译： 该带电粒子束显微镜的特征在于设置有用于检测粒子（118）的测量处理方法的选择装置（153,155），并且通过这种方式为具有大量二次电子的扫描区域选择不同的测量处理方法 （114）和二次电子数量少的区域（115）。 因此，在使用带电粒子束显微镜的样本扫描中，强调了具有较少发射的二次电子的底部孔和通道底部的对比度的图像，并且可以在短时间内获取强调阴影对比度的图像。

    Charged particle beam microscope
    4.
    发明授权
    Charged particle beam microscope 有权
    带电粒子束显微镜

    公开(公告)号：US08841612B2

    公开(公告)日：2014-09-23

    申请号：US13812899

    申请日：2011-08-08

    申请人： Muneyuki Fukuda ,  Naomasa Suzuki ,  Tomoyasu Shojo ,  Noritsugu Takahashi ,  Hiroshi Suzuki ,  Hiroshi Makino

    发明人： Muneyuki Fukuda ,  Naomasa Suzuki ,  Tomoyasu Shojo ,  Noritsugu Takahashi ,  Hiroshi Suzuki ,  Hiroshi Makino

    IPC分类号： G01N23/00 ,  H01J23/00 ,  H01J37/26 ,  H01J37/22 ,  H01J37/28 ,  G01K7/00 ,  G01N23/22

    CPC分类号： H01J37/263 ,  G01N23/22 ,  H01J37/222 ,  H01J37/28

    摘要： This charged particle beam microscope is characterized by being provided with selection means (153, 155) for a measurement processing method for detected particles (118) and by this means selecting a different measurement processing method for a scanning region with a large number of secondary electrons (115) emitted from a sample (114) and for a region with a small number of secondary electrons. Thus, in sample scanning using a charged particle beam microscope, an image in which the contrast of bottom holes and channel bottoms with few emitted secondary electrons is emphasized and images that emphasize shadow contrast can be acquired in a short period of time.

    摘要翻译： 该带电粒子束显微镜的特征在于设置有用于检测粒子（118）的测量处理方法的选择装置（153,155），并且通过这种方式为具有大量二次电子的扫描区域选择不同的测量处理方法 （114）和二次电子数量少的区域（115）。 因此，在使用带电粒子束显微镜的样本扫描中，强调了具有较少发射的二次电子的底部孔和通道底部的对比度的图像，并且可以在短时间内获取强调阴影对比度的图像。

    Composition for protective coating material
    5.
    发明授权
    Composition for protective coating material 失效
    保护涂层材料的组成

    公开(公告)号：US4645688A

    公开(公告)日：1987-02-24

    申请号：US679460

    申请日：1984-12-07

    申请人： Daisuke Makino ,  Hidetaka Sato ,  Hiroshi Suzuki ,  Shun-ichiro Uchimura ,  Hiroshi Suzuki

    发明人： Daisuke Makino ,  Hidetaka Sato ,  Hiroshi Suzuki ,  Shun-ichiro Uchimura ,  Hiroshi Suzuki

    IPC分类号： C08G73/10 ,  C08G77/54 ,  H01B3/30 ,  H01B3/46 ,  H01L23/29 ,  B05D5/12

    CPC分类号： C08G77/54 ,  C08G73/1042 ,  C08G73/106 ,  H01B3/303 ,  H01B3/46 ,  H01L23/296 ,  H01L2924/0002

    摘要： There are disclosed a composition for protective coating material, preferably for a protective coating material of a semiconductor device which is constituted of principal elements of a semiconductor memory element, an encapsulating layer containing an inorganic material for encapsulating said element and a layer of a cured protective coating material arranged between said memory element and said encapsulating layer, which is composed of a polyamide acid obtained by the reaction of a diaminosiloxane, an organic diamine containing no silicon and an organic tetrabasic acid dianhydride, and a semiconductor device having a layer of a cured protective coating material composed of a polyimide-silicone copolymer obtained by dehydrating ring closure of the above-mentioned polyamide acid.

    摘要翻译： 公开了一种用于保护涂层材料的组合物，优选用于半导体器件的保护涂层材料，其由半导体存储元件的主要元件，包含用于封装所述元件的无机材料的封装层和固化保护层 布置在所述存储元件和所述封装层之间的涂料，其由通过二氨基硅氧烷，不含硅的有机二胺和有机四元酸二酐反应获得的聚酰胺酸和具有固化的层的半导体器件 由通过上述聚酰胺酸脱水闭环得到的聚酰亚胺 - 硅氧烷共聚物构成的保护涂料。