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    Use of chemical-mechanical polishing for fabricating photonic bandgap structures
    2.
    发明授权
    Use of chemical-mechanical polishing for fabricating photonic bandgap structures 失效
    使用化学机械抛光制造光子带隙结构

    公开(公告)号：US5998298A

    公开(公告)日：1999-12-07

    申请号：US67614

    申请日：1998-04-28

    申请人： James G. Fleming ,  Shawn-Yu Lin ,  Dale L. Hetherington ,  Bradley K. Smith

    发明人： James G. Fleming ,  Shawn-Yu Lin ,  Dale L. Hetherington ,  Bradley K. Smith

    IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/132 ,  H01L33/00

    CPC分类号： G02B6/1225 ,  B82Y20/00 ,  G02B6/132 ,  G02B2006/12176

    摘要： A method is disclosed for fabricating a two- or three-dimensional photonic bandgap structure (also termed a photonic crystal, photonic lattice, or photonic dielectric structure). The method uses microelectronic integrated circuit (IC) processes to fabricate the photonic bandgap structure directly upon a silicon substrate. One or more layers of arrayed elements used to form the structure are deposited and patterned, with chemical-mechanical polishing being used to planarize each layer for uniformity and a precise vertical tolerancing of the layer. The use of chemical-mechanical planarization allows the photonic bandgap structure to be formed over a large area with a layer uniformity of about two-percent. Air-gap photonic bandgap structures can also be formed by removing a spacer material separating the arrayed elements by selective etching. The method is useful for fabricating photonic bandgap structures including Fabry-Perot resonators and optical filters for use at wavelengths in the range of about 0.2-20 .mu.m.

    摘要翻译： 公开了一种用于制造二维或三维光子带隙结构（也称为光子晶体，光子晶格或光子介质结构）的方法。 该方法使用微电子集成电路（IC）工艺在硅衬底上直接制造光子带隙结构。 用于形成结构的一层或多层阵列元件被沉积和图案化，其中使用化学机械抛光来平整每层以获得均匀性和层的精确垂直公差。 使用化学机械平面化可以使光子带隙结构形成在大面积上，层间均匀度约为2％。 气隙光子带隙结构也可以通过去除通过选择性蚀刻分离排列元件的间隔物材料来形成。 该方法可用于制造光子带隙结构，包括法布里 - 珀罗谐振器和用于波长在0.2-20μm范围内的滤光器。

    Use of chemical mechanical polishing in micromachining
    3.
    发明授权
    Use of chemical mechanical polishing in micromachining 失效
    在微加工中使用化学机械抛光

    公开(公告)号：US5804084A

    公开(公告)日：1998-09-08

    申请号：US729122

    申请日：1996-10-11

    申请人： Robert D. Nasby ,  Dale L. Hetherington ,  Jeffry J. Sniegowski ,  Paul J. McWhorter ,  Christopher A. Apblett

    发明人： Robert D. Nasby ,  Dale L. Hetherington ,  Jeffry J. Sniegowski ,  Paul J. McWhorter ,  Christopher A. Apblett

    IPC分类号： B32B3/04 ,  H01L21/00

    CPC分类号： B81C1/00611 ,  B81C2201/0125

    摘要： A process for removing topography effects during fabrication of micromachines. A sacrificial oxide layer is deposited over a level containing functional elements with etched valleys between the elements such that the sacrificial layer has sufficient thickness to fill the valleys and extend in thickness upwards to the extent that the lowest point on the upper surface of the oxide layer is at least as high as the top surface of the functional elements in the covered level. The sacrificial oxide layer is then polished down and planarized by chemical-mechanical polishing. Another layer of functional elements is then formed upon this new planarized surface.

    摘要翻译： 一种在微机械制造过程中消除地形影响的过程。 牺牲氧化物层沉积在含有在元件之间具有蚀刻谷的功能元件的层上，使得牺牲层具有足够的厚度以填充谷并且向上延伸到氧化物层的上表面上的最低点 至少与被覆盖层中的功能元件的顶表面一样高。 然后将牺牲氧化物层抛光并通过化学机械抛光进行平面化。 然后在这个新的平坦化表面上形成另一层功能元件。

    Chemical-mechanical polishing of recessed microelectromechanical devices
    5.
    发明授权
    Chemical-mechanical polishing of recessed microelectromechanical devices 失效
    嵌入式微机电装置的化学机械抛光

    公开(公告)号：US5919548A

    公开(公告)日：1999-07-06

    申请号：US915071

    申请日：1997-08-20

    申请人： Carole C. Barron ,  Dale L. Hetherington ,  Stephen Montague

    发明人： Carole C. Barron ,  Dale L. Hetherington ,  Stephen Montague

    IPC分类号： B32B3/04 ,  H01L21/00

    CPC分类号： B81C1/00611 ,  B81C2201/0125 ,  Y10T428/24331

    摘要： A method is disclosed for micromachining recessed layers (e.g. sacrificial layers) of a microelectromechanical system (MEMS) device formed in a cavity etched into a semiconductor substrate. The method uses chemical-mechanical polishing (CMP) with a resilient polishing pad to locally planarize one or more of the recessed layers within the substrate cavity. Such local planarization using the method of the present invention is advantageous for improving the patterning of subsequently deposited layers, for eliminating mechanical interferences between functional elements (e.g. linkages) of the MEMS device, and for eliminating the formation of stringers. After the local planarization of one or more of the recessed layers, another CMP step can be provided for globally planarizing the semiconductor substrate to form a recessed MEMS device which can be integrated with electronic circuitry (e.g. CMOS, BiCMOS or bipolar circuitry) formed on the surface of the substrate.

    摘要翻译： 公开了一种用于微加工在蚀刻到半导体衬底中的腔体中形成的微机电系统（MEMS）器件的凹陷层（例如，牺牲层）的方法。 该方法使用具有弹性抛光垫的化学机械抛光（CMP）来在衬底腔内局部平坦化一个或多个凹陷层。 使用本发明的方法的这种局部平面化有利于改进随后沉积的层的图案化，以消除MEMS器件的功能元件（例如，连接）之间的机械干扰，并且用于消除桁条的形成。 在一个或多个凹陷层的局部平坦化之后，可以提供另一个CMP步骤用于全面平坦化半导体衬底以形成凹陷的MEMS器件，该MEMS器件可与形成在其上的凹陷的MEMS器件集成在电子电路（例如，CMOS，BiCMOS或双极电路） 基板的表面。